An apparatus is disclosed for implementing an antenna tuner. In an example aspect, the apparatus includes a substrate, an antenna disposed on or in the substrate, a radio-frequency integrated circuit disposed on the substrate, and an antenna tuner. The radio-frequency integrated circuit includes an amplification circuit. The antenna tuner is coupled between the antenna and the amplification circuit. The antenna tuner includes an inductive component disposed on or in the substrate and a capacitive component implemented within the radio-frequency integrated circuit.

An amplifier is formed in a wiring layer. A semiconductor device includes a second layer over a first layer with a metal oxide therebetween. The first layer includes a first transistor including a first semiconductor layer containing silicon. The second layer includes an impedance matching circuit, and the impedance matching circuit includes a second transistor including a second semiconductor layer containing gallium. The first transistor forms first coupling capacitance between the first transistor and the metal oxide, and the impedance matching circuit forms second coupling capacitance between the impedance matching circuit and the metal oxide. The impedance matching circuit is electrically connected to the metal oxide through the second coupling capacitance. The metal oxide inhibits the influence of first radiation noise emitted from the impedance matching circuit on the operation of the first transistor.

A Doherty power amplifier circuit having a main power amplification device, an auxiliary power amplification device arranged in parallel with the main power amplification device, and a load modulation circuit comprising a harmonic injection circuit connected with respective outputs of the main power amplification device and the auxiliary power amplification device. The harmonic injection circuit is arranged to transfer harmonic components generated at the main power amplification device to the auxiliary power amplification device and harmonic components generated at the auxiliary power amplification device to the main power amplification device, when both the main and auxiliary power amplification devices are operating, for modulating the respective outputs of the main power amplification device and the auxiliary power amplification device.

A system, having: an RF power source; an RF matching network electrically coupled to the RF power source; an impedance matching circuit electrically coupled to the RF matching network, wherein the impedance matching circuit has a first adjustable capacitor connected in series with the RF matching network and a second adjustable capacitor connected in parallel with the first capacitor; and an inductive process load electrically coupled to the impedance matching circuit.

A transmission circuit including four transmission component sets for an Ethernet device is provided. Each transmission component set are coupled between an Ethernet connector and an Ethernet chip. Each transmission component set includes a transformer, two capacitors, and four transmission lines (TLs). The transformer includes four terminals and two center taps. Two diagonal terminals of the four terminals are coupled to a ground. The other two diagonal terminals of the four terminals are coupled to the Ethernet connector and, through one of the two capacitors, to the Ethernet chip via two of the four TLs, respectively. The two center taps are coupled to the Ethernet connector and, through the other one of the two capacitors, to the Ethernet chip via the other two of the four TLs, respectively.

A kHz to 100 GHz DC coupled circuit with an on-chip integrating capacitor includes an impedance matching structure, an input impedance, an input stage structure and an on-chip capacitor; the impedance matching structure comprises an matching inductor with one end connected to the input terminal and a first matching branch with one end connected to the input terminal, a second matching branch with one end connected to the other end of the matching inductor as well as the other end of the first matching branch, a third matching branch with one end connected to the matching inductor, in which the other ends of the second matching branch and the third matching branch are connected to the input impedance; the first, second and third matching branches are implemented as RLC circuits; or, one or two of the first, second, and third matching branches are break circuits, and the others are RLC circuits.

A multicomponent network may be added to a transmission line in a high-frequency circuit to transform a first impedance of a downstream circuit element to second impedance that better matches the impedance of an upstream circuit element. The multicomponent network may be added at a distance more than one-quarter wavelength from the downstream circuit element, and can tighten a frequency response of the impedance-transforming circuit to maintain low Q values and low VSWR values over a broad range of frequencies.

In a high-frequency transformer element includes a primary coil including first coil conductors and a secondary coil including second coil conductors are disposed in a multilayer body that includes a plurality of insulating layers. A magnetic-field cancellation conductor pattern is disposed in the multilayer body, is adjacent to some conductors of the first coil conductors in a lamination direction of the insulating layers, is arranged along a surface of the insulating layers, and allows a high-frequency current to flow in a direction opposite a high-frequency current flowing in the first coil conductors.

Methods and apparatus for processing a substrate are provided herein. For example, a matching network for use with a plasma processing chamber comprises an input configured to connect to a power source, an output configured to connect to the plasma processing chamber, a V/I sensor connected between the input of the matching network and an output of the power source, a load capacitor connected in parallel with at least one capacitor connected in series with a load switch, a tuning capacitor connected in series with at least one capacitor connected in parallel with a tuning switch, and a multiple level pulsing phase/magnitude module connected to the V/I sensor and to a multiple level pulsing synchronization switch driver connected to each of the load switch and the tuning switch for activating at least one of the load switch and the tuning switch in response to a control signal, which is based on a V/I sensor measurement, received from the power source.

A multicomponent network may be added to a transmission line in a high-frequency circuit to transform a first impedance of a downstream circuit element to second impedance that better matches the impedance of an upstream circuit element. The multicomponent network may be added at a distance more than one-quarter wavelength from the downstream circuit element, and can tighten a frequency response of the impedance-transforming circuit to maintain low Q values and low VSWR values over a broad range of frequencies.