An impedance matching device includes: a variable capacitor in which a plurality of first capacitance elements or a plurality of second capacitance elements are connected in parallel; a calculation unit that calculates an impedance or a reflection coefficient on the load side using information regarding the impedance acquired from the outside; and a control unit that determines an ON/OFF state to be taken by each of semiconductor switches included in the variable capacitor using the impedance or the reflection coefficient calculated by the calculation unit and turns on or off the semiconductor switches included in the first or second capacitance element based on the determined state. The control unit cyclically switches semiconductor switches to be turned on or off in a predetermined order.

Impedance matching transceivers may include a tuning circuit to match the transceiver module impedance to the housing conditions. In some examples, the impedance matching is controlled by tuning-circuits that may be integrated into a transceiver module by using a fan-out package (FO PKG). One example of a tuning circuit may include a switch to isolate the parallel capacitors, such that when the switch is on or closed the parallel capacitors are active.

In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes a mechanically variable capacitor (MVC) and a second variable capacitor. A control circuit is configured to carry out a first process for altering the second variable capacitor and the RF source frequency to reduce reflected power. The control circuit is further configured to carry out a second process of, upon determining that the alteration of the RF source frequency has caused the RF source frequency to be outside, at a minimum, or at a maximum of a predetermined frequency range, determining a new MVC configuration to cause the RF source frequency, according to the first process, to be altered to be within or closer to the predetermined frequency range. The new MVC configuration is based on the RF source frequency and the predetermined frequency range.

A termination for a high-frequency transmission line includes a first resistor that has a first terminal coupled to a first end of a transmission line and a second terminal coupled to a first input/output pad, and a second resistor that has a first terminal coupled to the first input/output pad. The first resistor and the second resistor may provide a combined resistance that matches a nominal value of a characteristic impedance of the transmission line. The apparatus may include a third resistor having a first terminal coupled to a second end of a transmission line, and a second terminal coupled to a second input/output pad, and a fourth resistor having a first terminal coupled to the second input/output pad. The third resistor and the fourth resistor may provide a combined resistance that matches the nominal value of the characteristic impedance of the transmission line.

A directional coupler includes a main line and a sub-line electromagnetically coupled to each other, a variable termination circuit that is connected to one end of the sub-line and that has a variable impedance, a variable matching circuit that is connected to the other end of the sub-line and that has a variable impedance or a variable attenuator that has a variable attenuation, and a control circuit that controls the impedance of the variable termination circuit and that controls the impedance of the variable matching circuit or the attenuation of the variable attenuator. The control circuit includes a non-volatile memory and controls the impedance of the variable termination circuit in accordance with data stored in the memory.

An amplifier includes a transistor, an input circuit coupled between an amplifier input and a transistor input terminal, and an output circuit coupled between a transistor output and a transistor output terminal. The input circuit includes an input-side harmonic termination circuit with a first inductor and a first capacitance in series between the transistor input terminal and ground. The output circuit includes a second inductor, an output-side harmonic termination circuit, and a shunt-L circuit. The second inductor is coupled between the transistor output terminal and the amplifier output. The output-side harmonic termination circuit includes a third inductor and a second capacitance in series between the amplifier output and ground. The shunt-L circuit includes a fourth inductor and a third capacitance connected in series between the amplifier output and ground. The input-side and output-side harmonic termination circuits resonate at a harmonic frequency of a fundamental frequency of operation of the amplifier.

A wideband hybrid harmonic high-speed impedance load pull tuner uses the active loop feedback technique combined with transmission type electronic tuner in the active feedback loop and electro-mechanical slide screw harmonic pre-matching tuning. The tuner allows millisecond two or three harmonic tuning with maximum Gamma close to 1 using reduced feedback injection power compared to purely active systems. The system is pre-calibrated and allows fast precision tuning even under nonlinear feedback amplifier power conditions when operated with in-situ wave measurement. Using wideband power dividers, instead of band-limited circulators, to convert the reflection electronic tuner into a transmission amplitude and phase modulator, allows multi-harmonic hybrid operation.

A method for transforming the impedance of a radio-frequency transmission line of a printed circuit from a first impedance value to a second impedance value, the radio-frequency transmission line being adapted to transport a radio-frequency signal at a frequency value comprised in a frequency range defined between a minimum frequency value and a maximum frequency value, wherein the following steps are envisaged:—dividing the radio-frequency transmission line into a plurality of circuit sections each one of the circuit sections including a first and a second impedance connected in parallel with each other by two circuit branches placed at a maximum distance (d.sub.max) from each other, wherein the circuit sections have respective third impedance values that gradually increase, respectively decrease, from the first impedance value to the second impedance value;—determining the maximum distance between the circuit branches in such a way as to avoid any undesired frequency values within the frequency range;—setting a fourth impedance value of one of the two impedances;—calculating a fifth impedance value of the other one of the two impedances, such that the impedance value of the circuit section is the third respective impedance value.

A control circuit (16) is configured to detect the impedance P1 of a load (3) and control each of the reactance value L1 of a first variable reactance element (12), the reactance value L2 of a second variable reactance element (14), and the phase shift amount φ of a phase shifter (15) on the basis of the detected impedance P1. Consequently, impedance matching can be achieved even with the phase shifter (15) that performs discrete phase shift control.

In one embodiment, an RF impedance matching network for a plasma chamber is disclosed. The matching network includes at least one electronically variable capacitor (EVC), each EVC comprising discrete capacitors each having a corresponding switching circuit. Each switching circuit is configured to switch in and out its corresponding discrete capacitor to alter a total capacitance of the EVC. Each switching circuit include a first diode operably coupled to the discrete capacitor, a capacitor coupled in series with the first diode, and a second diode operably coupled to the discrete capacitor. The second diode parallel to the first diode and the capacitor coupled in series.