Disclosed are a radio-frequency power supply system, a plasma processor, and a corresponding frequency-tuning matching method applied to a plasma processor having an ultra-low frequency bias radio-frequency power source. The frequency-tuning matching method comprises an impedance segment frequency matching obtaining step including partitioning a low frequency radio-frequency power output period into a plurality of impedance matching segments, and during each impedance matching segment, tuning output frequency of a high frequency radio-frequency source, detecting reflected power of the high frequency radio-frequency power supply, and after experiencing one or more low frequency radio-frequency power output period, obtaining and storing the segment matching frequency for each impedance matching segment. In the subsequent variable-frequency matching step, output frequency of the high frequency radio-frequency power supply is set to periodically vary in the stored plurality of segment matching frequencies so as to match characteristic impedance in respective impedance matching segment.

A wireless signal emitter of a tire pressure detector includes a controller, an antenna, and an impedance matching module. The impedance matching module includes an impedance matching circuit and an impedance adjusting circuit. The impedance matching circuit is electrically connected to the controller. The impedance adjusting circuit is electrically connected to the antenna and the impedance matching circuit. The impedance adjusting circuit includes a switching element electrically connected to the controller. When the switching element receives different signals of the controller, the impedance adjusting circuit switches between two different configurations, so that the impedance matching module has two different impedances, thereby the antenna sends two different radio frequency signals to achieve a purpose of a single tire pressure detector suitable for in-car receivers of different frequencies.

A radio-frequency module includes a first terminal, a second terminal, a first switch including a first switch terminal connected to the first terminal and a second switch terminal connectable to the first switch terminal, a second switch including a third switch terminal connectable to the second terminal, a first filter connected between the second switch terminal and the third switch terminal, and a substrate. The first switch and the second switch are included in a single semiconductor chip. The first filter and the semiconductor chip are on the substrate. In a plan view of the substrate, a first distance between the third switch terminal and the first switch terminal or a second distance between the third switch terminal and the second switch terminal is greater than a third distance between the first switch terminal and the second switch terminal.

A system and method integrates signal filters in a multiband transceiver. A preferred embodiment comprises an amplifier with a first tunable capacitor coupled to a signal input and a tunable filter. The tunable filter comprises an input stage with a first pair of inductors arranged in a dipole configuration and a second tunable capacitor coupled in parallel to the first pair of inductors and an output stage inductively coupled to the input stage, the output stage includes a second pair of inductors also arranged in a dipole configuration and a third tunable capacitor coupled in parallel to the second pair of inductors. The inductors are realized using bond wire or any other high Q material. The first tunable capacitor, the second tunable capacitor, and the third tunable capacitor can be tuned using a master-slave tuning configuration to adjust the operating frequency of the amplifier and the tunable filter to enable frequency band compatibility with multiple communications protocols.

The present technology is directed to a system and method for implementing passive power harvesting from ambient electromagnetic emissions with a smart rectenna that incorporates automatic frequency response tuning features. The disclosed system incorporates a tunable High Pass Filter and voltage multiplier rectifier with a front-end ultra wide band antenna unit. The frequency response of tunable components can be actively adjusted to match the frequency band containing most of the energy in the incident electromagnetic emission. A look up table is used for determining the appropriate biasing levels of the tunable components for each frequency in a frequency band of interest. By tuning a frequency response of impedance matching, filtering and rectifying components to correspond to a frequency region of maximum power spectral density in the incident energy signal, the system facilitates the scavenging of ambient electromagnetic energy from the spectral region with the highest power spectral density.

An impedance matching device 2A connected between one or more plasma generating electrodes 51, 52 and a RF power supply 1 that selectively supplies RF power of multiple frequencies includes multiple matching devices 31, 32 each of which corresponds to each frequency of the multiple frequencies of the RF power, and matches an impedance of the RF power supply 1 to an impedance of a plasma load, and a demultiplexer 20 that demultiplexes the RF power of multiple frequencies output by the RF power supply 1 and feeds each of the demultiplexed RF power to a corresponding matching device in the multiple matching devices 31, 32.

The invention relates to a universal semiconductor automatic high-speed serial signal testing method, comprising: a chip to be tested sending, to an impedance matching unit, a high-speed serial signal; then by means of a phase shift unit, sequentially transforming, according to a set fixed resolution, the phase of the high-speed serial signal, the magnitude of each offset phase being determined by a phase shift control signal outputted by a control unit and the resolution of the phase shift unit; after passing through the phase shift unit, the high-speed serial signal keeps channel impedance matching by means of the impedance matching unit; the signal entering an acquisition unit, and being acquired under the action of an acquisition control signal sent by the control unit; the control unit performing signal exchange with semiconductor automatic testing equipment (ATE); and the acquisition unit transmitting the acquired signal back to the universal semiconductor ATE for algorithm operation, and then the actual high-speed serial data stream is obtained. The present invention enables direct testing of high-speed serial interface signals by means of the universal ATE during mass production, greatly improving testing convenience and efficiency.

This application provides a tuning component, including: a plurality of pins, where the plurality of pins include a first pin, a second pin, a third pin, and a fourth pin; a reactance element, where the reactance element is connected between the first pin and the second pin; a switch assembly, disposed between the third pin and the fourth pin; a first internal branch, where one end of the first internal branch is connected to the third pin; and a second internal branch, where one end of the second internal branch is connected to the fourth pin, where the other end of the first internal branch is connected to the other end of the second internal branch to form an integrated end, and the integrated end is connected to the first pin. This application further provides an antenna apparatus and a terminal device, to help reduce headroom requirement of antenna.

According to various embodiments, an electronic device in a wireless communication system may include a Power Amplifier (PA) for a first frequency band, a Low Noise Amplifier (LNA) for a second frequency band at least partially overlapping a frequency band which is twice the first frequency band, and an impedance tuner which is in a first impedance state or a second impedance state under the control of the processor. The PA and the impedance tuner may be electrically coupled. A harmonic output level of the PA in the first impedance state may be greater than a harmonic output level of the PA in the second impedance state. The processor may be configured to control the impedance tuner to be in the second impedance state when communication is performed both in the first frequency band and the second frequency band, and control the impedance tuner to be in the first impedance state when communication is performed only in the first frequency band.

This document describes systems and techniques to perform simulation model fitting for radio frequency (RF) matching-network optimization. Using a simulation tool, a simulation model of the RF interface circuitry is generated with matching component values. Port impedances of the simulation model are adjusted to match at least one or more simulated scattering parameters to at least one or more actual scattering parameter of a physical prototype of the RF interface circuitry assembled with the same matching component values. An optimal load-pull location for the RF interface circuitry is also determined. The simulation model is then used to identify a matching pair that corresponds to the optimal load-pull location. In this way, the described systems and techniques can reduce engineering time and improve the accuracy of the tuning process.