An example integrated circuit package includes an acoustic wave resonator, the acoustic wave resonator including a Fresnel surface. In some examples, the Fresnel surface includes a plurality of recessed features and/or protruding features at different locations on the Fresnel surface, each of the plurality of features to confine main mode acoustic energy from a respective portion of the Fresnel surface in a central portion of the acoustic wave resonator.

The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

An arrangement is disclosed for measuring an environment parameter at a rotor of a rotary machine; according to some embodiments, the parameter to be measured is temperature and the machine to monitor is a turbomachine. The arrangement includes at least: a SAW or BAW device electrically coupled with an antenna, a parameter-sensitive impedance device, and two identical cables electrically coupling the SAW or BAW device respectively with the impedance device and a short-circuit or an open-circuit or a matching impedance device. The SAW or BAW device is located in a first zone of the rotor, while the parameter-sensitive impedance device is located in a second zone of the rotor remote from the first zone of the rotor. An interrogator can obtain environment parameter values by sending RF signals to the SAW or BAW device through the antenna.

An acoustic wave device includes a layered substrate having a piezoelectric material layer bonded to a second material layer including a material having a higher thermal conductivity than the piezoelectric material layer, interdigital transducer electrodes disposed on a surface of the piezoelectric material layer, contact pads disposed on the piezoelectric material layer and in electrical contact with the interdigital transducer electrodes, external bond pads disposed on the second material layer, and conductive vias passing through the layered substrate and providing electrical contact between the contact pads and external bond pads.

An acoustic wave device is disclosed. The acoustic wave device can include a transmit filter that includes bulk acoustic wave resonators and a series surface acoustic wave resonator that is coupled between the bulk acoustic wave resonators and a transmit output node. The acoustic wave device can also include a loop circuit that is coupled to the transmit filter. The loop circuit can generate an anti-phase signal to a target signal at a particular frequency.

An acoustic wave device includes a piezoelectric substrate, interdigital transducer electrodes including a predetermined number of electrode fingers disposed on an upper surface of the substrate, and a dielectric material layer having a first portion and a second portion. The first portion is disposed on the upper surface of the substrate and between the interdigital transducer electrode fingers. The second portion is disposed above the interdigital transducer electrode fingers. The acoustic wave device further includes at least one thermally conductive bridge disposed within the dielectric material layer and contacting upper surfaces of at least two adjacent interdigital transducer electrode fingers to dissipate heat therefrom.

Multiplexers are disclosed. A multiplexer can include a first filter and a second filter that are coupled to a common node. The second filter can include a first type of acoustic wave resonators (e.g., bulk acoustic wave resonators) and a series acoustic wave resonator of a second type (e.g., a surface acoustic wave resonator) that is coupled between the acoustic wave resonators of the first type and the common node. The first filter can provide a single-ended radio frequency signal. In certain embodiments, the first filter can be a receive filter and the second filter can be a transmit filter.

A multiplexer (10) includes a common terminal (100c), a filter (21) that supports Band 41, a filter (22) that supports Band 40, and a filter (23) that supports Band 1Rx. A matching circuit (11) includes a capacitor (C1) connected in a path (111), a switch (SW1) connected between a ground and a node in the path (111) between the capacitor (C1) and the filter (21), a resonant circuit connected in a path (112) and having a resonant frequency in Band 40, the resonant frequency being a frequency at which an impedance is minimum, a switch (SW2) connected between the ground and a node in the path (112) between the resonant circuit and the filter (22), an inductor (L1) connected in a path (113), and a switch (SW3) connected between the ground and a node in the path (113) between the inductor (L1) and the filter (23).

An acoustic wave filter device includes first and second terminals, a longitudinally coupled resonator coupled between the first terminal and the second terminal, and an inductor connected between a path and a ground potential, the path connecting the first terminal and the longitudinally coupled resonator to each other. The longitudinally coupled resonator includes at least one first IDT electrode coupled to the first terminal, and at least one second IDT electrode connected to the second terminal. A total capacitance value of the at least one first IDT electrode is smaller than a total capacitance value of the at least one second IDT electrode.