An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO.sub.2), a piezoelectric thin film 12 including LiTaO.sub.3 crystal or LiNbO.sub.3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.

A method for manufacturing an elastic wave device includes successively stacking conductive films on a piezoelectric substrate on which a pattern of a first resist has been formed, removing the first resist from the piezoelectric substrate on which the conductive films have been stacked; applying a second resist to the piezoelectric substrate from which the first resist has been removed and subjecting the second resist to exposure and development, thus forming a protective layer that protects a first region with the second resist, and etching the second conductive material in a state in which the first region is protected by the protective layer.

A ladder-type surface acoustic wave filter assembly includes a plurality of series resonators formed on a substrate and connected between an input terminal and an output terminal. A first series resonator has a lowest resonance frequency among the plurality of series resonator. A parallel resonator formed on the substrate and connected between the plurality of series resonators and the ground terminal. A dielectric film is coupled to at least one of the plurality of series resonators and has an inverse temperature coefficient of frequency to that of the substrate. A film thickness of the dielectric film in a region where the second series resonator is formed is smaller than a film thickness of the dielectric film in a region where the first series resonator is formed.

Guided Surface Acoustic Wave (SAW) devices with improved quartz orientations are disclosed. A guided SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate. The quartz carrier substrate includes an orientation that provides improved performance parameters for the SAW device, including electromechanical coupling factor, resonator quality factor, temperature coefficient of frequency, and delta temperature coefficient of frequency.

An acoustic wave device that has a better TCF and can improve a resonator Q or impedance ratio is provided. The acoustic wave device includes a substrate 11 containing 70 mass % or greater of silicon dioxide (SiO.sub.2), a piezoelectric thin film 12 including LiTaO.sub.3 crystal or LiNbO.sub.3 crystal and disposed on the substrate 11, and an interdigital transducer electrode 13 disposed in contact with the piezoelectric thin film 12.

Guided Surface Acoustic Wave (SAW) devices with improved quartz orientations are disclosed. A guided SAW device includes a quartz carrier substrate, a piezoelectric layer on a surface of the quartz carrier substrate, and at least one interdigitated transducer on a surface of the piezoelectric layer opposite the quartz carrier substrate. The quartz carrier substrate includes an orientation that provides improved performance parameters for the SAW device, including electromechanical coupling factor, resonator quality factor, temperature coefficient of frequency, and delta temperature coefficient of frequency.

An acoustic wave device includes a high acoustic velocity structure, a low acoustic velocity layer on the high acoustic velocity structure, a piezoelectric layer directly or indirectly on the low acoustic velocity layer, and an electrode on the piezoelectric layer. The low acoustic velocity layer is made of a dielectric material having a lower Young's modulus than silicon oxide, or includes the dielectric material as a main component.

Aspects of this disclosure relate to acoustic wave devices on stacked die. A first die can include first acoustic wave device configured to generate a boundary acoustic wave. A second die can include a second acoustic wave device configured to generate a second boundary acoustic wave, in which the second die is stacked with the first die. The first acoustic wave resonator can include a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and high acoustic velocity layers on opposing sides of the piezoelectric layer. The high acoustic velocity layers can each have an acoustic velocity that is greater than a velocity of the boundary acoustic wave.

A composite filter device includes bandpass filters whose respective one ends are electrically connected in common. A first bandpass filter of the bandpass filters includes a first filter, a switch, a second filter, and an impedance element that is electrically connected to the switch and having an impedance value larger than the input impedance value of the second filter. The switch is configured to be switched between a first state in which the first filter and the second filter are electrically connected and a second state in which the first filter and the impedance element are electrically connected.

A surface acoustic wave device using a longitudinally polarized guided wave comprises a composite substrate comprising a piezoelectric layer formed over a base substrate, wherein the crystalline orientation of the piezoelectric layer with respect to the base substrate is such that, the phase velocity of the longitudinally polarized wave is below the critical phase velocity of the base substrate at which wave guiding within the piezoelectric layer vanishes. A method of fabrication of such surface acoustic wave device is also disclosed.