Provided is a sensor interface including a first cantilever beam bundle including at least one resonator and a first output terminal, a second cantilever beam bundle including at least one resonator and a second output terminal, and a differential amplifier including a first input terminal electrically connected to the first output terminal of the first cantilever beam bundle and a second input terminal electrically connected to the second output terminal of the second cantilever beam bundle.

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.

The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.

A micro-electrical-mechanical system (MEMS) guided wave device includes a single crystal piezoelectric layer and at least one guided wave confinement structure configured to confine a laterally excited wave in the single crystal piezoelectric layer. A bonded interface is provided between the single crystal piezoelectric layer and at least one underlying layer. A multi-frequency device includes first and second groups of electrodes arranged on or in different thickness regions of a single crystal piezoelectric layer, with at least one guided wave confinement structure. Segments of a segmented piezoelectric layer and a segmented layer of electrodes are substantially registered in a device including at least one guided wave confinement structure.

According to one embodiment, a sensor module includes at least one sensor and at least one switch. The sensor includes a first piezoelectric element. The first piezoelectric element includes a first electrode. The first piezoelectric element is set with a resonance frequency to resonate at a vibration frequency of a detection target. The switch includes a second piezoelectric element. The second piezoelectric element includes a second electrode connected to the first electrode and a third electrode electrically separated from the second electrode.

A hybrid ferroelectric/non-ferroelectric piezoelectric microresonator is disclosed. The hybrid microresonator uses a ferroelectric layer as the actuator as ferroelectric materials typically have higher actuation coefficients than non-ferroelectric piezoelectric materials. The hybrid microresonator uses a non-ferroelectric piezoelectric layer as the sensor layer as non-ferroelectric piezoelectric materials typically have higher sensing coefficients than ferroelectric materials. This hybrid microresonator design allows the independent optimization of actuator and sensor materials. This hybrid microresonator design may be used for bulk acoustic wave contour mode resonators, bulk acoustic wave solidly mounted resonators, free-standing bulk acoustic resonators, and piezoelectric transformers.

Provided is a sensor interface including a first cantilever beam bundle including at least one resonator and a first output terminal, a second cantilever beam bundle including at least one resonator and a second output terminal, and a differential amplifier including a first input terminal electrically connected to the first output terminal of the first cantilever beam bundle and a second input terminal electrically connected to the second output terminal of the second cantilever beam bundle.

A resonant member of a MEMS resonator oscillates in a mechanical resonance mode that produces non-uniform regional stresses such that a first level of mechanical stress in a first region of the resonant member is higher than a second level of mechanical stress in a second region of the resonant member. A plurality of openings within a surface of the resonant member are disposed more densely within the first region than the second region and at least partly filled with a compensating material that reduces temperature dependence of the resonant frequency corresponding to the mechanical resonance mode.

A resonator includes a base, at least one vibration arm, a frame, and a holding arm. The vibration arm includes a piezoelectric film, an upper electrode, and a lower electrode. The inequality Fs/Fm<1.9 or the inequality 2.1<Fs/Fm holds, where Fm is a frequency of a main or primary mode in the vibration arm, and Fs is a frequency of a spurious mode in the holding arm.