Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

A vibration device that includes a vibration portion, a support portion connected to the vibration portion, a bending-vibrating portion connected to the support portion, and a frame-shaped base portion connected to the bending-vibration portion and disposed so as to surround the vibration portion. The base portion defines a slit that extends in a first direction crossing a second direction in which the support portion extends from the vibration portion, the slit defining first and second fixed ends of the bending-vibrating portion and which are continuous with the base portion. A length between a portion of the bending-vibrating portion connected to the support portion to one of the first and second fixed ends of the bending-vibrating portion is in a range of /8 to 3/8, where denotes a wavelength of a bending vibration corresponding to a frequency of a characteristic vibration of the vibration portion.

A piezoelectric vibrator that includes first and second vibration portions that vibrate with mutually reverse phases. Each of the vibration portions includes a silicon layer, a first piezoelectric layer and a second piezoelectric layer that has polarization in an opposite direction to a direction of polarization of the first piezoelectric layer. First and second electrodes are disposed on opposite sides of the second piezoelectric layer. The piezoelectric vibrator has a structure such that a first potential is applied to the first electrode of the first vibration portion and the second electrode of the second vibration portion, and a second potential is applied to the second electrode of the first vibration portion and the first electrode of the second vibration portion.

A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.

A MEMS resonator includes a main substrate forming a receiving part at a center of the main substrate; a mass body having one end part and a center part elastically supported by both sides of the main substrate; a driving unit configured at one side of the receiving part on the main substrate and producing a driving force by a voltage applied to both sides of the one end part of the mass body to move a position of the mass body with respect to the main substrate; and a tuning part including a pair of tuning units provided symmetrically with respect to the second elastic member, and having a beam member changing a length of the second elastic member by an actuating operation of each tuning unit to control a frequency.

The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

Switchable and/or tunable filters, methods of manufacture and design structures are disclosed herein. The method of forming the filters includes forming at least one piezoelectric filter structure comprising a plurality of electrodes formed to be in contact with at least one piezoelectric substrate. The method further includes forming a micro-electro-mechanical structure (MEMS) comprising a MEMS beam in which, upon actuation, the MEMS beam will turn on the at least one piezoelectric filter structure by interleaving electrodes in contact with the piezoelectric substrate or sandwiching the at least one piezoelectric substrate between the electrodes.

An acoustic wave device includes: a first substrate having a first surface on which an acoustic wave element is located; a second substrate having a second surface on which a functional element is located; a third substrate having a third surface, which faces the first and second surfaces, and a fourth surface being opposite to the third surface, a first metal layer separated from the acoustic wave element and a wiring line in the first substrate and connecting the first and third surfaces; a second metal layer separated from the functional element and a wiring line in the second substrate and connecting the second and third surfaces; a first metal pattern located on the third surface, being in contact with the first and second metal layers, and connecting the first and second metal layers; and a terminal located on the fourth surface and electrically connectable to the first metal pattern.

An acoustic wave force field generator array that uses a plurality of synchronized oscillating emitters system that effectively blocks noise from passing through an acoustic barrier of wave/bubble pattern forms generated by the rapid oscillation of the integrated magnet and emitter system. The movement of the magnets also produces an EM field that generates a current to at least partially power the driver and speaker systems.