The present disclosure provides a package structure of an air gap type semiconductor device and its fabrication method. The fabrication method includes forming a bonding layer having a first opening on a carrier; disposing a semiconductor chip on the bonding layer, thereby forming a first cavity at the first opening, where the first cavity is at least aligned with a portion of an active region of the semiconductor chip; performing an encapsulation process to encapsulate the semiconductor chip on the carrier; lastly, forming through holes passing through the carrier where each through hole is aligned with a corresponding input/output electrode region of the semiconductor chip, and forming interconnection structures on a side of the carrier different from a side with the bonding layer, where each interconnection structure passes through a corresponding through hole and is electrically connected to an corresponding input/output electrode.

An apparatus includes a microelectromechanical system (MEMS) die having a first surface and an opposing second surface. The MEMS die includes a surface-mounted resonator on the first surface and includes a first inductor. The apparatus also includes first and second dies. The first die has a third surface and an opposing fourth surface. The first die is coupled to the MEMS die such that the third surface of the first die faces the first surface of the MEMS die. The first and second surfaces are spaced apart. The first die includes an oscillator circuit and a second inductor. The oscillator circuit is coupled to the second inductor. The second inductor is inductively coupled to the first inductor. The second die is electrically coupled to the first die.

A MEMS device including an active layer having a first surface and a second surface is provided. A first electrode and a second electrode, and at least one reconfigurable electrode segment are arranged over the first surface of the active layer. At least one reconfiguration layer is arranged over the second surface of the active layer. The at least one reconfigurable electrode segment and the at least one reconfiguration layer overlaps. One or more via contacts are disposed through the active layer configured to couple the at least one reconfigurable electrode segment and the at least one reconfiguration layer. The at least one reconfiguration layer is coupled to a reconfiguration switch for reconfiguring electrical connections to the at least one reconfigurable electrode segment. The MEMS device is configured to generate different resonant frequencies by reconfiguring the electrical connections to the at least one reconfigurable electrode segment using the reconfiguration switch.

The invention relates to a device for measuring temperature in a high-voltage portion of a switchgear station, characterised in that it comprises: at least one temperature sensor (21, 22, 23, 24) located at a point on the high-voltage portion of which the temperature is to be monitored, at least one antenna (25) connected to the at least one temperature sensor, a control module (26) located in a low-voltage portion of the switchgear station, and at least one antenna (27) connected to the control module. The at least one temperature sensor (21, 22, 23, 24) is suitable for transmitting a signal representative of a temperature measurement and the control module (26) is suitable for receiving the representative signal, via the antennas, and for processing said signal in order to produce a message.

a SAW filter includes a substrate including a piezoelectric substrate, a transmission filter, and an additional resonator. The transmission filter is a ladder-type filter filtering signals from a transmission terminal and outputting the result to an antenna terminal. Further, the transmission filter includes one or more serial resonators and one or more parallel resonators which are connected in a ladder configuration on the piezoelectric substrate. An initial stage resonator is the serial resonator. The additional resonator includes an IDT electrode on the piezoelectric substrate. The IDT electrode is connected to the transmission terminal at a stage before the transmission filter and is connected to any of the one or more GND terminals. In the additional resonator, a resonance frequency and an antiresonance frequency are located outside of a passband of the transmission filter.

A high-frequency module that performs filtering of signals transmitted and received through an antenna includes an antenna terminal, a transmission terminal, a reception terminal, a reception filter connected between the antenna terminal and the reception terminal, a transmission filter connected between the antenna terminal and the transmission terminal, a first element connected between the antenna terminal and the transmission filter, and a second element connected in series between the transmission terminal and the transmission filter. The first element and the second element are capacitively coupled to each other.

The present application describes embodiments of a radio-frequency identification (RFID) sensor based on a combinationof a surface acoustic wave (SAW) transducer and two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) conducting structure, and its use in chemical detection and (bio)molecular diagnostics. The SAW RFID sensor chip contains apiezoelectric substrate, on which a multilayer heterojunction structure is deposited. The heterojunction structure comprises atleast two layers, a buffer layer and a barrier layer, wherein both layers are grown from III-V single-crystalline or polycrystallinesemiconductor materials, such as GaN/AlGaN. Interdigitated transducers (IDTs) transducing SAWs are installed on top of thebarrier layer. A 2DEG or 2DHG conducting channel is formed at the interface between the buffer and barrier layers and provideselectron or hole current in the system between the non-ohmic (capacitively-coupled) source and drain contacts connected to the formed channel.

An apparatus includes a microelectromechanical system (MEMS) die having a first surface and an opposing second surface. The MEMS die includes a surface-mounted resonator on the first surface and includes a first inductor. The apparatus also includes first and second dies. The first die has a third surface and an opposing fourth surface. The first die is coupled to the MEMS die such that the third surface of the first die faces the first surface of the MEMS die. The first and second surfaces are spaced apart. The first die includes an oscillator circuit and a second inductor. The oscillator circuit is coupled to the second inductor. The second inductor is inductively coupled to the first inductor. The second die is electrically coupled to the first die.

A radio frequency module includes an elastic wave filter and a low-noise amplifier that amplifies an RF signal output from the elastic wave filter. An output impedance of the elastic wave filter is positioned, on a Smith chart, closer to a noise matching impedance than to a gain matching impedance, at a frequency of at least one of a low frequency end and a high frequency end of a passband of the elastic wave filter. The noise matching impedance indicates the output impedance where a noise figure of the LNA becomes minimum. The gain matching impedance indicates the output impedance where a gain of the LNA becomes maximum.

A surface acoustic wave device includes a piezoelectric substrate and a pair of interdigital transducer electrodes. The pair of interdigital transducer electrodes include an alternating region as a region where the electrode fingers connected to one busbar and the electrode fingers connected to the other busbar are alternately provided. When a region on an end portion side of the alternating region and a region including distal end portions of the plurality of electrode fingers is referred to as an edge region, a propagation velocity of a surface acoustic wave in the edge region is slower than a propagation velocity of a surface acoustic wave in the alternating region. A propagation velocity of a surface acoustic wave in a busbar region as a region where the busbar is disposed is faster than the propagation velocity of the surface acoustic wave in the alternating region.