H03H9/125

CRYSTAL ELEMENT AND CRYSTAL DEVICE
20200244248 · 2020-07-30 · ·

Provided is a crystal element that includes: a crystal piece that is in a substantially rectangular shape on a plan view; an excitation electrode part located on both main surfaces of the crystal piece; a connection lead part extended to a first short-side of the crystal piece from the excitation electrode part; a convex part located on both ends of a second short-side of the crystal piece; and a projected part located on both ends of the first short-side of the crystal piece. Further, a concave part is located in the convex part, and a recessed part is located in the projected part.

CRYSTAL ELEMENT AND CRYSTAL DEVICE
20200244248 · 2020-07-30 · ·

Provided is a crystal element that includes: a crystal piece that is in a substantially rectangular shape on a plan view; an excitation electrode part located on both main surfaces of the crystal piece; a connection lead part extended to a first short-side of the crystal piece from the excitation electrode part; a convex part located on both ends of a second short-side of the crystal piece; and a projected part located on both ends of the first short-side of the crystal piece. Further, a concave part is located in the convex part, and a recessed part is located in the projected part.

RESONATOR AND RESONANCE DEVICE
20200204155 · 2020-06-25 ·

A resonator includes a vibration portion with upper and lower electrodes with a piezoelectric film disposed therebetween. Moreover, a protective film is provided to face the piezoelectric film with the upper electrode interposed therebetween and is exposed in a first region in the vibration portion. A conductive film is provided to face the piezoelectric film with the protective film interposed therebetween and is exposed in a second region that is adjacent to the first region in the vibration portion. A connection electrode is formed in the protective film to electrically connect the conductive film to the lower electrode. The upper electrode is formed such that an area of a region overlapping the conductive film is equal to or smaller than half of a total area of the conductive film and/or avoids the region overlapping the conductive film.

Acoustic resonator assembly and filter

An acoustic resonator assembly and a filter are disclosed. The acoustic resonator assembly includes at least two acoustic resonators vertically connected to each other. The acoustic resonator includes: an acoustic mirror, a bottom electrode layer, a piezoelectric layer, and a top electrode layer that are arranged on a substrate. An active area of the acoustic resonator is defined by an overlapping area of the acoustic mirror, the bottom electrode layer, the piezoelectric layer, and the top electrode layer. The acoustic resonator further includes a support layer arranged on the substrate or the piezoelectric layer on a periphery of a projection of the acoustic mirror on the substrate. The at least two acoustic resonators are vertically connected to each other through the support layer. The filter significantly reduces the volume and the area of a device, improves design freedom and reduces design difficulty, enhances product performance and greatly reduces costs.

Acoustic resonator assembly and filter

An acoustic resonator assembly and a filter are disclosed. The acoustic resonator assembly includes at least two acoustic resonators vertically connected to each other. The acoustic resonator includes: an acoustic mirror, a bottom electrode layer, a piezoelectric layer, and a top electrode layer that are arranged on a substrate. An active area of the acoustic resonator is defined by an overlapping area of the acoustic mirror, the bottom electrode layer, the piezoelectric layer, and the top electrode layer. The acoustic resonator further includes a support layer arranged on the substrate or the piezoelectric layer on a periphery of a projection of the acoustic mirror on the substrate. The at least two acoustic resonators are vertically connected to each other through the support layer. The filter significantly reduces the volume and the area of a device, improves design freedom and reduces design difficulty, enhances product performance and greatly reduces costs.

Integrated quartz MEMS tuning fork resonator/oscillator
10581402 · 2020-03-03 · ·

A piezoelectric quartz tuning fork resonator having a pair of tines formed from a common quartz plate, with a middle electrode and two outer electrodes being disposed at or on top and bottom surfaces of each of the pair of tines and interconnected such that the outer electrodes at or on the top and bottom surfaces of a first one of the pair of tines are connected in common with the middle electrodes on the top and bottom surfaces of a second one of the pair of tines and further interconnected such that the outer electrodes at or on the top and bottom surfaces of the second one of the pair of tines are connected in common with the middle electrodes on the top and bottom surfaces of the first one of the pair of tines.

Integrated quartz MEMS tuning fork resonator/oscillator
10581402 · 2020-03-03 · ·

A piezoelectric quartz tuning fork resonator having a pair of tines formed from a common quartz plate, with a middle electrode and two outer electrodes being disposed at or on top and bottom surfaces of each of the pair of tines and interconnected such that the outer electrodes at or on the top and bottom surfaces of a first one of the pair of tines are connected in common with the middle electrodes on the top and bottom surfaces of a second one of the pair of tines and further interconnected such that the outer electrodes at or on the top and bottom surfaces of the second one of the pair of tines are connected in common with the middle electrodes on the top and bottom surfaces of the first one of the pair of tines.

HIGH POWER BULK ACOUSTIC WAVE RESONATOR FILTER DEVICES

An acoustic resonator device and method thereof. The device includes a substrate member having an air cavity region. A piezoelectric layer is coupled to and configured overlying the substrate member and the air cavity region. The piezoelectric layer is configured to be characterized by an x-ray rocking curve Full Width at Half Maximum (FWHM) ranging from 0 degrees to 2 degrees. A top electrode is coupled to and configured overlying the piezoelectric layer, while a bottom electrode coupled to and configured underlying the piezoelectric layer within the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM range improves a power handling capability characteristic and a power durability characteristic.

HIGH POWER BULK ACOUSTIC WAVE RESONATOR FILTER DEVICES

An acoustic resonator device and method thereof. The device includes a substrate member having an air cavity region. A piezoelectric layer is coupled to and configured overlying the substrate member and the air cavity region. The piezoelectric layer is configured to be characterized by an x-ray rocking curve Full Width at Half Maximum (FWHM) ranging from 0 degrees to 2 degrees. A top electrode is coupled to and configured overlying the piezoelectric layer, while a bottom electrode coupled to and configured underlying the piezoelectric layer within the air cavity region. The configuration of the materials of the piezoelectric layer and the substrate member to achieve the specific FWHM range improves a power handling capability characteristic and a power durability characteristic.

Acoustic resonator structure with inclined C-axis piezoelectric bulk and crystalline seed layers

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.