A MEMS resonator is operated at its parallel resonance frequency. An acoustic wave is propagated laterally away from a central region of the MEMS resonator through a piezoelectric layer of the MEMS resonator. The propagating acoustic wave is attenuated with concentric confiners that surround and are spaced apart from a perimeter of an electrode that forms the MEMS resonator.

A piezoelectric film that includes crystalline AlN; at least one first element partially replacing Al in the crystalline AlN; and a second element doping the crystalline AlN and which has an ionic radius smaller than that of the first element and larger than that of Al.

A fluidic sensing device includes a first sidewall, a second sidewall, a bulk acoustic resonator structure, a biomolecule, and a cover. A fluidic channel is defined between the first and second sidewalls. The bulk acoustic resonator structure has a surface defining at least a portion of the bottom of the channel. The biomolecule is attached to the surface of the bulk acoustic resonator that forms the bottom of the channel. The cover is disposed over the channel and the first and second sidewalls. A portion of the cover disposed over the channel defines at least a portion of the top of the channel and blocks UV radiation from being transmitted through the cover. A first portion of the cover disposed over the first sidewall is transparent to UV radiation, and a second portion of the cover disposed over the second sidewall is transparent to UV radiation.

A microfabricated RF filter uses a resonant cavity weakly coupled to a transmission line, to attenuate noise sources emitting interference into the RF radiation at the resonant frequency. Radiation at the resonant frequency is leaked into the resonant cavity and build up there, until it is dumped to ground by a switch.

Embodiments of the invention include a filtering device that includes a first electrode, a piezoelectric material in contact with the first electrode, and a second electrode in contact with the piezoelectric material. The piezoelectric filtering device expands and contracts laterally in a plane of an organic substrate in response to application of an electrical signal between the first and second electrodes.

Embodiments of the invention include a piezoelectric resonator which includes an input transducer having a first piezoelectric material, a vibrating structure coupled to the input transducer, and an output transducer coupled to the vibrating structure. In one example, the vibrating structure is positioned above a cavity of an organic substrate. The output transducer includes a second piezoelectric material. In operation the input transducer causes an input electrical signal to be converted into mechanical vibrations which propagate across the vibrating structure to the output transducer.

An apparatus includes a substrate, a thin film piezoelectric layer, a transducer, and a low resistivity layer. The thin film piezoelectric layer is over the substrate, the transducer includes a number of electrodes in contact with the thin film piezoelectric layer and configured to transduce an acoustic wave in the thin film piezoelectric layer. The low resistivity layer is between at least a portion of the substrate and the thin film piezoelectric layer. By providing the low resistivity layer between at least a portion of the substrate and the thin film piezoelectric layer, a spurious response of the apparatus may be significantly reduced, thereby improving the performance thereof.

A thin-film bulk acoustic resonator, a semiconductor apparatus including the acoustic resonator and its manufacturing methods are presented. The thin-film bulk acoustic resonator includes a lower dielectric layer, a first cavity inside the lower dielectric layer, an upper dielectric layer, a second cavity inside the upper dielectric layer, and a piezoelectric film that is located between the first and the second cavities and continuously separates these two cavities. The plan views of the first and the second cavities have an overlapped region, which is a polygon that does not have any parallel sides. The piezoelectric film in this inventive concept is a continuous film without any through-hole in it, therefore it can offer improved acoustic resonance performance.

Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material exposing a wafer underlying the insulator. The insulator material remains over the single crystalline beam. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes venting, through the lid, the sacrificial material and a portion of the wafer under the single crystalline beam to form an upper cavity above the single crystalline beam and a lower cavity in the wafer, below the single crystalline beam.

A method for generating high order harmonic frequencies includes: providing a piezoelectric resonant film; and inputting a driving signal with a single tone frequency for driving the piezoelectric resonant film to oscillate in a non-linear region so as to generate a plurality of high order harmonic frequencies. Therefore, the quantity of the high order harmonic frequencies can be adjusted by applying an electrical controlling method.