A MEMS resonator is operated at its parallel resonance frequency. An acoustic wave is propagated laterally away from a central region of the MEMS resonator through a piezoelectric layer of the MEMS resonator. The propagating acoustic wave is attenuated with concentric confiners that surround and are spaced apart from a perimeter of an electrode that forms the MEMS resonator.

A thin-film bulk acoustic resonator (FBAR) apparatus includes a lower dielectric layer including a first cavity; an upper dielectric layer including a second cavity, wherein the upper dielectric layer is on the lower dielectric layer; and an acoustic resonance film that is positioned between and separating the first and the second cavities. The acoustic resonance film includes a lower electrode layer, an upper electrode layer, and a piezoelectric film that is sandwiched between the lower and upper electrode layers. A plan view of the first and the second cavities overlap to form an overlapped region having a polygonal shape without parallel sides.

A transducer includes first and second piezoelectric layers made of corresponding different first and second piezoelectric materials and three or more electrodes, implemented in two or more conductive electrode layers. The first piezoelectric layer is sandwiched between a first pair of electrodes and the second piezoelectric layer is sandwiched between a second pair of electrodes. The first and second pairs of electrodes contain no more than one electrode that is common to both pairs.

A resonator is provided having a first electrode and a second electrode; and a piezoelectric film that is disposed between the first and second electrodes, has an upper surface opposing the first electrode, and that vibrates in a predetermined vibration mode when a voltage is applied between the first and second electrodes. Moreover, the resonator includes a protective film made of an insulator and disposed opposing the upper surface of the piezoelectric film with the first electrode interposed therebetween. Furthermore, a conductive film made of a conductor is provided that is disposed opposing the upper surface of the piezoelectric film with the protective film interposed therebetween, where the conductive film is electrically connected to any one of the first and second electrodes.

A Fin Bulk Acoustic Resonator (FinBAR) includes a fin integrally fabricated on a substrate of a glass or a semiconductor, an inner electrode deposited on the fin, a piezoelectric layer disposed on the inner electrode, an outer electrode deposited on the piezoelectric layer, a first electrode and a second electrode formed on the top surface of the substrate and connected to the inner and outer electrodes respectfully. The fin is characterized with a larger height than its width. A FinBAR array including a number of the FinBARs with different fin widths sequentially located on one chip is capable of continuously filtering frequencies in UHF and SHF bands.

A piezoelectric micromechanical resonator includes a supporting beam including a fixed edge that is fixed to a supporting member and a free edge opposite the fixed edge, a piezoelectric sensor including an edge attached to the supporting member, the piezoelectric sensor further including a lower electrode, a piezoelectric unit, and an upper electrode sequentially stacked on a surface of the supporting beam, and a lumped mass provided on the surface of the supporting beam at a side of the supporting beam including the free edge, the upper electrode having a Young's modulus smaller than a Young's modulus of the lower electrode.

Micromachined microelectromechanical systems (MEMS) based resonators offer integration with other MEMS devices and electronics. Whilst piezoelectric film bulk acoustic resonators (FBAR) generally exhibit high electromechanical transduction efficiencies and low signal transmission losses they also suffer from low quality factors and limited resonance frequencies. In contrast electrostatic FBARs can yield high quality factors and resonance frequencies but suffer from increased fabrication complexity. lower electromechanical transduction efficiency and significant signal transmission loss. Accordingly, it would be beneficial to overcome these limitations by reducing fabrication complexity via a single metal electrode layer topping the resonator structure and supporting relatively low complexity/low resolution commercial MEMS fabrication processes by removing the fabrication requirement for narrow transduction gaps. Beneficially, embodiments of the invention provide MEMS circuits with electrostatic tuning and provide resonator designs combining the advantages of piezoelectric actuation and bulk-mode resonators.

A resonator including a lower electrode, an upper electrode, and a piezoelectric film that is formed between the lower electrode and the upper electrode. A MEMS device is provided that includes an upper lid that faces the upper electrode, and a lower lid that faces the lower electrode and that seals the resonator together with the upper lid. A CMOS device is mounted on a surface of the upper lid or the lower lid opposite a surface that faces the resonator. The CMOS device includes a CMOS layer and a protective layer that is disposed on a surface of the CMOS layer opposite a surface that faces the resonator. The upper or lower lid to which the CMOS device is joined includes a through-electrode that electrically connects the CMOS device to the resonator.

A resonator including a base; two or more vibration arms connected at ends thereof to a front end of the base and spaced apart from each other across a predetermined space and extending away from the base. Moreover, a connection member connects the vibration arms that bend in the same direction when an electric field is applied. The resonator inhibit occurrence of a spurious mode that otherwise occurs in a resonator that performs out-of-plane bending.

A method for manufacturing a semiconductor apparatus includes: on a base substrate, forming an isolation trench layer, a first dielectric layer, a first metal connecting layer, a piezoelectric film, and an upper electrode layer; forming an acoustic resonance film by patternizing the piezoelectric film, the upper electrode layer, and the first metal connecting layer; above the base substrate, forming a second dielectric layer and a third dielectric layer; forming a first cavity through the third and second dielectric layers, and the protection layer; removing a part of the base substrate to expose the isolation trench layer; forming a fourth dielectric layer under the isolation trench layer; and forming a second cavity through the fourth dielectric layer, the isolation trench layer, and the first dielectric layer, plan views of the first and second cavities forming an overlapped region having a polygon shape without parallel sides.