An acoustic resonator has a substrate having a surface and a single-crystal piezoelectric plate, with a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on a surface of the single-crystal piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The ends of IDT interleaved fingers or inner surfaces of the opposing busbars have a curved shape. In some cases, gaps between ends of the interleaved fingers and opposing busbars have one of circular gap shapes or parabolic gap shapes. The cavity may be formed in an intermediate layer of the substrate.

Embodiments of this disclosure relate to bulk acoustic wave resonators on a substrate. The bulk acoustic wave resonators include a first bulk acoustic wave resonator, a second bulk acoustic wave resonator, a conductor electrically connecting the first bulk acoustic wave resonator to the second bulk acoustic wave resonator, and an air gap positioned between the conductor and a surface of the substrate.

Embodiments of this disclosure relate to bulk acoustic wave resonators on a substrate. The bulk acoustic wave resonators include a first bulk acoustic wave resonator, a second bulk acoustic wave resonator, a conductor electrically connecting the first bulk acoustic wave resonator to the second bulk acoustic wave resonator, and an air gap positioned between the conductor and a surface of the substrate.

An acoustic resonator device is formed using a wafer-to-wafer bonding process by etching recesses into a first surface of a piezoelectric substrate, a depth of the recesses greater than a target piezoelectric membrane thickness; then wafer-to-wafer bonding the first surface of the piezoelectric substrate to a handle wafer using a releasable bonding method. The piezoelectric substrate is then thinned to the target piezoelectric membrane thickness to form a piezoelectric plate and at least one conductor pattern is formed on the thinned piezoelectric plate. The side of the thinned piezoelectric plate having the conductor pattern is bonded to a carrier wafer using a metal-to-metal wafer bonding process and the handle wafer is removed.

An acoustic resonator device is formed using a wafer-to-wafer bonding process by etching recesses into a first surface of a piezoelectric substrate, a depth of the recesses greater than a target piezoelectric membrane thickness; then wafer-to-wafer bonding the first surface of the piezoelectric substrate to a handle wafer using a releasable bonding method. The piezoelectric substrate is then thinned to the target piezoelectric membrane thickness to form a piezoelectric plate and at least one conductor pattern is formed on the thinned piezoelectric plate. The side of the thinned piezoelectric plate having the conductor pattern is bonded to a carrier wafer using a metal-to-metal wafer bonding process and the handle wafer is removed.

A 5 GHz Wi-Fi bandpass filter includes a ladder filter circuit with two or more shunt transversely-excited film bulk acoustic resonators (XBARs) and two or more series XBARs. Each of the two or more shunt XBARS includes a diaphragm having an LN-equivalent thickness greater than or equal to 360 nm, and each of the two or more series XBARS includes a diaphragm having an LN-equivalent thickness less than or equal to 375 nm.

A 5 GHz Wi-Fi bandpass filter includes a ladder filter circuit with two or more shunt transversely-excited film bulk acoustic resonators (XBARs) and two or more series XBARs. Each of the two or more shunt XBARS includes a diaphragm having an LN-equivalent thickness greater than or equal to 360 nm, and each of the two or more series XBARS includes a diaphragm having an LN-equivalent thickness less than or equal to 375 nm.

Multiplexing circuits with bulk acoustic wave (BAW) resonators as network elements for higher performance are provided. Multiplexing networks which support newer fourth generation (4G) and fifth generation (5G) standards may include a combination of multiplexers having a number of radio frequency (RF) filters connected to an antenna at the same time. One critical aspect of such a multiplexer design is the loading of these filters to each other, in which the static capacitance presented by a filter can be beneficial or detrimental to other filters in the multiplexing network. Aspects of the present disclosure introduce a BAW resonator to improve multiplexing network performance using the frequency-dependent capacitance, resonance, and/or anti-resonance of the BAW resonator.

Multiplexing circuits with bulk acoustic wave (BAW) resonators as network elements for higher performance are provided. Multiplexing networks which support newer fourth generation (4G) and fifth generation (5G) standards may include a combination of multiplexers having a number of radio frequency (RF) filters connected to an antenna at the same time. One critical aspect of such a multiplexer design is the loading of these filters to each other, in which the static capacitance presented by a filter can be beneficial or detrimental to other filters in the multiplexing network. Aspects of the present disclosure introduce a BAW resonator to improve multiplexing network performance using the frequency-dependent capacitance, resonance, and/or anti-resonance of the BAW resonator.

Acoustic resonators are disclosed. An acoustic resonator includes a substrate having a surface and a single-crystal piezoelectric plate having front and back surfaces. The back surface is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate. The IDT includes: a first busbar and a second busbar disposed on respective portions of the piezoelectric plate other than the diaphragm; a first set of elongate fingers extending from the first bus bar onto the diaphragm; and a second set of elongate fingers extending from the second bus bar onto the diaphragm, the second set of elongate fingers interleaved with the first set of elongate fingers.