A method of designing a filter to meet a set of specifications. The set of specifications is received, and a filter design is established. Analysis of the filter design is performed by: determining a part admittance matrix; determining a circuit admittance matrix based on the part admittance matrices; reducing interior nodes of the circuit admittance matrix; reducing algebraic nodes to transform the circuit admittance matrix into a Green's Function; evaluating the Green's Function to determine a circuit exterior node admittance matrix; and transforming the circuit exterior node admittance matrix to a circuit scattering matrix. The circuit scattering matrix is compared to the set of specifications to determine whether the filter design is satisfactory. When a determination is made that the design is not satisfactory, the filter design is modified and the process is repeated. When a determination is made that the design is satisfactory, a filter design description is output.

A ceramic resonator radio frequency filter includes a printed circuit board, one or more first coaxial resonators disposed on the printed circuit board, and one or more second coaxial resonators disposed over the one or more first coaxial resonators so that the one or more first coaxial resonators and one or more second coaxial resonators are arranged in a stacked configuration. The one or more first coaxial resonators and second coaxial resonators electrically connected to the printed circuit board.

A microelectromechanical resonant switch (resoswitch) converts received radio frequency (RF) energy into a clock output. The resoswitch first accepts incoming amplitude- or frequency-shift keyed clock-modulated RF energy at a carrier frequency, filters it, provides power gain via resonant impact switching, and finally envelop detects impact impulses to demodulate and recover the carrier clock waveform. The resulting output derives from the clock signal that originally modulated the RF carrier, resulting in a local clock that shares its originator's accuracy. A bare push-pull 1-kHz RF-powered mechanical clock generator driving an on-chip inverter gate capacitance of 5 fF can potentially operate with only 5 pW of battery power, 200,000 times lower than a typical real-time clock. Using an off-chip inverter with 17.5 pF of effective capacitance, a 1-kHz push-pull resonator would consume 17.5 nW.

Integrated Microelectromechanical System (MEMS) devices and methods for making the same. The integrated MEMS device comprises a substrate (200) with first electronic circuitry (206) formed thereon, as well as a MEMS filter device (100). The MEMS filter device has a transition portion (118) configured to (a) electrically connect the MEMS filter device to second electronic circuitry and (b) suspend the MEMS filter device over the substrate such that a gas gap exists between the substrate and the MEMS filter device. The transition portion comprises a three dimensional hollow ground structure (120) in which an elongate center conductor (122) is suspended. The RF MEMS filter device also comprises at least two adjacent electronic elements (102/110) which are electrically isolated from each other via a ground structure of the transition portion, and placed in close proximity to each other.

Three-dimensional microstructure devices having substantially perfect alignment and leveling of a three-dimensional microstructure with respect to a substrate having a plurality of discrete electrodes and relating fabricating methods are disclosed. Seed layers are deposited onto the discrete electrodes of the substrate, and the three-dimensional microstructure is bonded adjacent to the seed layers. A substantially uniform sacrificial layer is deposited onto exposed surfaces of the three-dimensional microstructure. A plurality of first gaps exists between the seed layers and corresponding regions of the sacrificial layer. Conductive layers are deposited to fill the first gaps. The sacrificial layer is dissolved to create a second plurality of gaps between the conductive layers and the corresponding regions of the three-dimensional microstructure. The second gaps are substantially uniform.

For a component operating with acoustic waves, it is proposed to provide a compensation layer on the component for compensating for a negative temperature coefficient of the frequency, which includes a material based on a chemical compound made up of at least two elements, which has a negative thermal expansion coefficient.

A resonator circuit, a filter with improved tunability, and a duplexer with improved tunability are disclosed. In an embodiment, the resonator circuit includes a resonator, a Z transformer and an impedance circuit, wherein the impedance circuit has an impedance Z and includes an impedance element, wherein the Z transformer is interconnected between the resonator and the impedance circuit, and wherein the Z transformer transforms the impedance Z to a new impedance ZZ and comprises a transformation circuit selected from: a generalized impedance converter (GIC), an negative impedance converter (NIC), a generalized impedance inverter (GII) and an negative impedance inverter (NII).

The present application is directed to a tunable filter system. The system includes a resonator having an inner wall surrounding a cavity. The resonator includes a MEMS device positioned in the cavity including a substrate, a movable plate and a thermal actuator. The thermal actuator is has a first end coupled to the substrate and a second end coupled to the plate. The actuator moves the plate between a first and a second position in relation to the substrate. The application is also directed to a method for operating the tunable filter.

A piezoelectrically transduced resonator device includes a wafer having a substrate, a buried oxide layer formed on the substrate, and a device layer formed on the buried oxide layer, and a resonator suspended within an air gap of the wafer above the substrate, the resonator including a portion of the device layer, a piezoelectric layer, and top and bottom electrodes contacting top and bottom sides of the piezoelectric layer, wherein the portion of the device layer is not directly connected to the wafer and wherein the resonator is configured to move relative to the substrate under electrostatic force to tune the frequency of the resonator device when a direct current voltage is applied between the substrate and the portion of the device layer of the resonator.

A dual resonator chip, includes a kilohertz frequency resonator in the chip and a megahertz frequency resonator in the same chip, wherein the kilohertz frequency resonator and the megahertz frequency resonator are MEMS resonators.