A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a carrier, an element, and a first electronic component. The element is disposed on the carrier. The first electronic component is disposed above the element. The element is configured to adjust a first bandwidth of a first signal transmitted from the first electronic component.

A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a carrier, an element, and a first electronic component. The element is disposed on the carrier. The first electronic component is disposed above the element. The element is configured to adjust a first bandwidth of a first signal transmitted from the first electronic component.

Bulk acoustic wave (BAW) resonators and particularly top electrodes with step arrangements for BAW resonators are disclosed. Top electrodes on piezoelectric layers are disclosed that include a border (BO) region with a dual-step arrangement where an inner step and an outer step are formed with increasing heights toward peripheral edges of the top electrode. Dielectric spacer layers may be provided between the outer steps and the piezoelectric layer. Passivation layers are disclosed that extend over the top electrode either to peripheral edges of the piezoelectric layer or that are inset from peripheral edges of the piezoelectric layer. Piezoelectric layers may be arranged with reduced thickness portions in areas that are uncovered by top electrodes. BAW resonators as disclosed herein are provided with high quality factors and suppression of spurious modes while also providing weakened BO modes that are shifted farther away from passbands of such BAW resonators.

Bulk acoustic wave (BAW) resonators and particularly top electrodes with step arrangements for BAW resonators are disclosed. Top electrodes on piezoelectric layers are disclosed that include a border (BO) region with a dual-step arrangement where an inner step and an outer step are formed with increasing heights toward peripheral edges of the top electrode. Dielectric spacer layers may be provided between the outer steps and the piezoelectric layer. Passivation layers are disclosed that extend over the top electrode either to peripheral edges of the piezoelectric layer or that are inset from peripheral edges of the piezoelectric layer. Piezoelectric layers may be arranged with reduced thickness portions in areas that are uncovered by top electrodes. BAW resonators as disclosed herein are provided with high quality factors and suppression of spurious modes while also providing weakened BO modes that are shifted farther away from passbands of such BAW resonators.

An acoustic structure is provided. The acoustic structure includes an acoustic resonator structure configured to resonate in a series resonance frequency (e.g., passband frequency) to pass a signal, or cause a series capacitance to block the signal in a parallel resonance frequency (e.g., stopband frequency). The parallel resonance frequency may become higher than the series resonance frequency when the tunable capacitance is lesser than or equal to two times of the series capacitance (C.sub.Tune≤2C.sub.0), or lower than the series resonance frequency when the tunable capacitance is greater than two times of the series capacitance (C.sub.Tune>2C.sub.0). In this regard, the acoustic structure can be configured to include a tunable reactive circuit to generate the tunable capacitance (C.sub.Tune) to adjust the parallel resonance frequency. As such, it may be possible to flexibly configure the acoustic resonator structure to block the signal in desired stopband frequencies.

Techniques for improving structures, acoustic wave resonators, layers, and devices are disclosed, including filters, oscillators and systems that may include such devices. An acoustic wave device of this disclosure may comprise a substrate and a piezoelectric resonant volume. The piezoelectric resonant volume of the acoustic wave device may have a main resonant frequency. The acoustic wave device may comprise a first distributed Bragg acoustic reflector. The first distributed Bragg acoustic reflector may comprise a first active piezoelectric layer. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in a super high frequency (SHF) band. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in an extremely high frequency (EHF) band.

An acoustic wave device includes a piezoelectric layer, first and second upper electrodes, first and second lower electrodes, and first and second acoustic reflection films. In plan view, first and second resonator portions are respectively defined by portions where the first upper electrode and the first lower electrode overlap and where the second upper electrode and the second lower electrode overlap. The first and second acoustic reflection films respectively include first and second metal layers. First and second overlapping portions are respectively defined by portions where only the first upper electrode overlaps with the first metal layer and where only the second upper electrode overlaps with the second metal layer. An area of the first resonator portion is smaller than an area of the second resonator portion and an area of the first overlapping portion is larger than an area of the second overlapping portion.

An acoustic wave device includes a piezoelectric layer, first and second upper electrodes, first and second lower electrodes, and first and second acoustic reflection films. In plan view, first and second resonator portions are respectively defined by portions where the first upper electrode and the first lower electrode overlap and where the second upper electrode and the second lower electrode overlap. The first and second acoustic reflection films respectively include first and second metal layers. First and second overlapping portions are respectively defined by portions where only the first upper electrode overlaps with the first metal layer and where only the second upper electrode overlaps with the second metal layer. An area of the first resonator portion is smaller than an area of the second resonator portion and an area of the first overlapping portion is larger than an area of the second overlapping portion.

Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having front and back surfaces, the back surface attached to a surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least one finger of the IDT is disposed in a groove in the diaphragm. A depth of the groove is less than a thickness of the at least one finger of the IDT.

Acoustic resonator devices, filters, and methods are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having front and back surfaces, the back surface attached to a surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm that spans a cavity in the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on the diaphragm. The IDT is configured to excite a primary acoustic mode in the diaphragm in response to a radio frequency signal applied to the IDT. At least one finger of the IDT is disposed in a groove in the diaphragm. A depth of the groove is less than a thickness of the at least one finger of the IDT.