Patent classifications
H03H9/54
Device for subcutaneous delivery of fluid medicament
An improved device delivers a fluid medicament to the subcutaneous tissue of a user. The device is better suited for patients with Parkinson's Disease and other central nervous system disorders, than conventional infusion devices. The device can include a reusable part including a drive component (e.g., motor) and control electronics and a disposable part including a medicament reservoir. Medicament can be evacuated from the medicament reservoir by a plunger assembly that includes a plunger attached to a lead screw that is rotated by a nut, all within the disposable part. The device can be fluidically coupled with the tissue via a flexible cannula. Various embodiments relate to an improved cannula insertion mechanism that delivers the cannula under a force applied by a spring. Various embodiments relate to improved filling of the device, for example, using a vial adapter and an automated filling station.
Device for subcutaneous delivery of fluid medicament
An improved device delivers a fluid medicament to the subcutaneous tissue of a user. The device is better suited for patients with Parkinson's Disease and other central nervous system disorders, than conventional infusion devices. The device can include a reusable part including a drive component (e.g., motor) and control electronics and a disposable part including a medicament reservoir. Medicament can be evacuated from the medicament reservoir by a plunger assembly that includes a plunger attached to a lead screw that is rotated by a nut, all within the disposable part. The device can be fluidically coupled with the tissue via a flexible cannula. Various embodiments relate to an improved cannula insertion mechanism that delivers the cannula under a force applied by a spring. Various embodiments relate to improved filling of the device, for example, using a vial adapter and an automated filling station.
ACOUSTIC WAVE DEVICE
An acoustic wave device includes a piezoelectric substrate, a first interdigital transducer electrode on the piezoelectric substrate, and a first reflector and a second reflector. The first interdigital transducer electrode, the first reflector, and the second reflector each include a plurality of electrode fingers. At least one of the first interdigital transducer electrode, the first reflector, and the second reflector has a nonuniform duty ratio area where three successive electrode fingers in an acoustic wave propagation direction all have different duty ratios.
ACOUSTIC WAVE DEVICE
An acoustic wave device includes a piezoelectric substrate, a first interdigital transducer electrode on the piezoelectric substrate, and a first reflector and a second reflector. The first interdigital transducer electrode, the first reflector, and the second reflector each include a plurality of electrode fingers. At least one of the first interdigital transducer electrode, the first reflector, and the second reflector has a nonuniform duty ratio area where three successive electrode fingers in an acoustic wave propagation direction all have different duty ratios.
ACOUSTIC WAVE RESONATOR WITH LOW/ZERO-ELECTROMECHANICAL COUPLING AT BORDER REGION
The present disclosure relates to a Bulk Acoustic Wave (BAW) resonator, which includes a bottom electrode, a top electrode structure, and a ferroelectric layer sandwiched in between. Herein, the ferroelectric layer is formed of a ferroelectric material, which has a box-shape polarization-electric field (P-E) curve. The ferroelectric layer includes a ferroelectric border (BO) portion positioned at a periphery of the ferroelectric layer and a ferroelectric central portion surrounded by the ferroelectric BO portion. The ferroelectric BO portion has a first polarization and a first electromechanical coupling coefficient, and the ferroelectric central portion has a second polarization and a second electromechanical coupling coefficient. An absolute value of the first polarization is less than an absolute value of the second polarization, and the first electromechanical coupling coefficient is less than the second electromechanical coupling coefficient. The ferroelectric central portion is configured to provide a resonance of the BAW resonator.
ACOUSTIC WAVE RESONATOR WITH LOW/ZERO-ELECTROMECHANICAL COUPLING AT BORDER REGION
The present disclosure relates to a Bulk Acoustic Wave (BAW) resonator, which includes a bottom electrode, a top electrode structure, and a ferroelectric layer sandwiched in between. Herein, the ferroelectric layer is formed of a ferroelectric material, which has a box-shape polarization-electric field (P-E) curve. The ferroelectric layer includes a ferroelectric border (BO) portion positioned at a periphery of the ferroelectric layer and a ferroelectric central portion surrounded by the ferroelectric BO portion. The ferroelectric BO portion has a first polarization and a first electromechanical coupling coefficient, and the ferroelectric central portion has a second polarization and a second electromechanical coupling coefficient. An absolute value of the first polarization is less than an absolute value of the second polarization, and the first electromechanical coupling coefficient is less than the second electromechanical coupling coefficient. The ferroelectric central portion is configured to provide a resonance of the BAW resonator.
SYSTEM AND METHOD FOR FILTER ENHANCEMENT
A system for filter enhancement, preferably including one or more analog taps and a controller, and optionally including one or more couplers. The system is preferably configured to integrate with a filter, such as a passband filter or other frequency-based filter. The system can be configured to integrate with an RF communication system, an RF front end, or any other suitable RF circuitry. A method for filter enhancement, preferably including configuring one or more analog taps, and optionally including calibrating a system for filter enhancement and/or receiving temperature information.
SYSTEM AND METHOD FOR FILTER ENHANCEMENT
A system for filter enhancement, preferably including one or more analog taps and a controller, and optionally including one or more couplers. The system is preferably configured to integrate with a filter, such as a passband filter or other frequency-based filter. The system can be configured to integrate with an RF communication system, an RF front end, or any other suitable RF circuitry. A method for filter enhancement, preferably including configuring one or more analog taps, and optionally including calibrating a system for filter enhancement and/or receiving temperature information.
COMPOSITE SUBSTRATES INCLUDING EPITAXIAL MONOCRYSTALLINE PIEZOELECTRIC LAYERS BONDED TO SUBSTRATES, AND ACOUSTIC WAVE DEVICES FORMED WITH SUCH COMPOSITE SUBSTRATES
A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.
COMPOSITE SUBSTRATES INCLUDING EPITAXIAL MONOCRYSTALLINE PIEZOELECTRIC LAYERS BONDED TO SUBSTRATES, AND ACOUSTIC WAVE DEVICES FORMED WITH SUCH COMPOSITE SUBSTRATES
A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.