The present disclosure provides a bulk acoustic wave resonance device, a bulk acoustic wave filter device and a radio frequency front end device. The bulk acoustic wave resonance device includes a first layer including a cavity disposed at a first side of the first layer; a first electrode layer disposed in the cavity; a second layer disposed at the first side and disposed on the first electrode layer, and the second layer is a flat layer and covers the first cavity; and a second electrode layer disposed at the first side and disposed on the second layer, and the first electrode layer includes at least two first electrode bars or the second electrode layer includes at least two second electrode bars. The present disclosure can increase the difference between acoustic impedance of a resonance region and a non-resonance region, thereby increasing Q value of the resonance device.

The present disclosure provides a bulk acoustic wave resonance device, a bulk acoustic wave filter device and a radio frequency front end device. The bulk acoustic wave resonance device includes a first layer including a cavity disposed at a first side of the first layer; a first electrode layer disposed in the cavity; a second layer disposed at the first side and disposed on the first electrode layer, and the second layer is a flat layer and covers the first cavity; and a second electrode layer disposed at the first side and disposed on the second layer, and the first electrode layer includes at least two first electrode bars or the second electrode layer includes at least two second electrode bars. The present disclosure can increase the difference between acoustic impedance of a resonance region and a non-resonance region, thereby increasing Q value of the resonance device.

A bandpass filter circuit includes a fourth element that is a capacitor having one end connected to a first node, a fifth element that is a capacitor having one end connected to a second node, a sixth element that is a capacitor connected between other end of the fourth element and other end of the fifth element, a seventh element that is an inductor having one end connected to a fourth node to which the fourth element and the sixth element are connected, other end of the seventh element is connected to a ground terminal, and an eighth element that is an inductor having one end connected to a fifth node to which the fifth element and the sixth element are connected, other end of the eighth element is connected to the ground terminal.

A filter includes an input terminal, an output terminal, a ground terminal, a first capacitor and a second capacitor that are connected in series between the input terminal and the output terminal, a capacitive element that is connected in parallel to the first capacitor and the second capacitor between the input terminal and the output terminal, and has a Q factor that is smaller than a Q factor of the first capacitor and is smaller than a Q factor of the second capacitor, and an inductor that has a first end and a second end, the first end being coupled to a node that is provided between the first capacitor and the second capacitor and that is coupled to the capacitive element through the first capacitor and the second capacitor, the second end being coupled to the ground terminal.

An acoustic wave device including: a POI structure including: a material layer where a high acoustic velocity layer and a low acoustic velocity layer are alternate, a substrate is a lowermost high acoustic velocity layer; a first piezoelectric layer located above the material layer, wherein a layer adjacent to the first piezoelectric layer is referred to as a surface low acoustic velocity layer; wherein an acoustic velocity of a bulk wave propagated in the high acoustic velocity layer and the low high acoustic velocity layer is higher than and lower than an acoustic velocity of a bulk wave of the first piezoelectric layer, respectively. The POI structure includes at least two regions, a first device having a resonance of a first vibration mode is manufactured in the first region, and a second device having a resonance of a second vibration mode is manufactured in a second region.

An acoustic wave device including: a POI structure including: a material layer where a high acoustic velocity layer and a low acoustic velocity layer are alternate, a substrate is a lowermost high acoustic velocity layer; a first piezoelectric layer located above the material layer, wherein a layer adjacent to the first piezoelectric layer is referred to as a surface low acoustic velocity layer; wherein an acoustic velocity of a bulk wave propagated in the high acoustic velocity layer and the low high acoustic velocity layer is higher than and lower than an acoustic velocity of a bulk wave of the first piezoelectric layer, respectively. The POI structure includes at least two regions, a first device having a resonance of a first vibration mode is manufactured in the first region, and a second device having a resonance of a second vibration mode is manufactured in a second region.

A bulk acoustic wave resonator includes: a first electrode; a piezoelectric layer disposed on at least a portion of the first electrode; and a second electrode disposed on the piezoelectric layer. The piezoelectric layer contains a dopant, and a value of [a thickness (nm) of the piezoelectric layer×a concentration (at %) of the dopant]/100 is less than or equal to 80.

Disclosed is a filter bank die that includes a first acoustic wave (AW) filter having a first antenna terminal coupled to the antenna port terminal and a first filter terminal, wherein the first AW filter is configured to have a filter skirt with a slope that spans at least a 100 MHz gap between adjacent passbands, and a second AW filter having a second filter terminal, and a second antenna terminal coupled to the first antenna terminal to effectively diplex signals that pass through the first AW filter and the second AW filter.

Disclosed is a filter bank die that includes a first acoustic wave (AW) filter having a first antenna terminal coupled to the antenna port terminal and a first filter terminal, wherein the first AW filter is configured to have a filter skirt with a slope that spans at least a 100 MHz gap between adjacent passbands, and a second AW filter having a second filter terminal, and a second antenna terminal coupled to the first antenna terminal to effectively diplex signals that pass through the first AW filter and the second AW filter.

Disclosed is a filter bank module having a substrate, an antenna port terminal, and a filter bank die. The filter bank die is fixed to the substrate and includes a first acoustic wave (AW) filter having a first antenna terminal coupled to the antenna port terminal and a first filter terminal, wherein the first AW filter is configured to pass a first passband and attenuate frequencies outside the first passband, and a second AW filter having a second filter terminal, and a second antenna terminal coupled to the first antenna terminal to effectively diplex signals that pass through the first AW filter and the second AW filter, wherein the second AW filter is configured to pass a second passband that is spaced from the first passband to minimize interference between first bandpass and the second bandpass while attenuating frequencies outside the second passband.