Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extending along a length of the piezoelectric substrate and spaced across a width of the piezoelectric substrate.

Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extending along a length of the piezoelectric substrate and spaced across a width of the piezoelectric substrate.

An acoustic wave filter with different bulk acoustic wave devices is disclosed. The filter includes a first bulk acoustic wave resonator and a second bulk acoustic wave resonator. The first bulk acoustic wave resonator includes a first raised frame structure. The first raised frame structure is a multi-layer raised frame structure. The second bulk acoustic wave resonator includes a second raised frame structure. The first raised frame structure has at least one more raised frame layer than the second raised frame structure.

An acoustic wave filter with different bulk acoustic wave devices is disclosed. The filter includes a first bulk acoustic wave resonator and a second bulk acoustic wave resonator. The first bulk acoustic wave resonator includes a first raised frame structure. The first raised frame structure is a multi-layer raised frame structure. The second bulk acoustic wave resonator includes a second raised frame structure. The first raised frame structure has at least one more raised frame layer than the second raised frame structure.

A filter with bulk acoustic wave devices is disclosed. The filter includes a first bulk acoustic wave resonator and a second bulk acoustic wave resonator. The first bulk acoustic wave resonator includes a first raised frame structure. The first raised frame structure is a multi-layer raised frame structure. The second bulk acoustic wave resonator includes a second raised frame structure. The first raised frame structure has at least one more raised frame layer than the second raised frame structure.

A filter with bulk acoustic wave devices is disclosed. The filter includes a first bulk acoustic wave resonator and a second bulk acoustic wave resonator. The first bulk acoustic wave resonator includes a first raised frame structure. The first raised frame structure is a multi-layer raised frame structure. The second bulk acoustic wave resonator includes a second raised frame structure. The first raised frame structure has at least one more raised frame layer than the second raised frame structure.

A filter is disclosed. The filter can be a band pass filter or a band rejection filter. The filter can have bulk acoustic wave resonators. The filter can include a shunt bulk acoustic wave resonator and a series bulk acoustic wave resonator. The shunt bulk acoustic wave resonator and the series bulk acoustic wave resonator include different raised frame structures. The different raised frame structures contribute to one of the shunt bulk acoustic wave resonator or the series bulk acoustic wave resonator to have a higher quality factor below a resonant frequency than the other.

A filter is disclosed. The filter can be a band pass filter or a band rejection filter. The filter can have bulk acoustic wave resonators. The filter can include a shunt bulk acoustic wave resonator and a series bulk acoustic wave resonator. The shunt bulk acoustic wave resonator and the series bulk acoustic wave resonator include different raised frame structures. The different raised frame structures contribute to one of the shunt bulk acoustic wave resonator or the series bulk acoustic wave resonator to have a higher quality factor below a resonant frequency than the other.