A frequency division duplex (FDD) first band includes a first downlink operating band and a first uplink operating band. An FDD second band includes a second downlink operating band and a second uplink operating band. In the FDD first band and the FDD second band, (1) the first downlink operating band, second downlink operating band, first uplink operating band, and second uplink operating band are positioned in order from lowest to highest frequency. The frequency range of the first uplink operating band and that of the second uplink operating band do not overlap each other. A filter is formed in or on a first substrate having piezoelectric properties and has a pass band including the first and second uplink operating bands.

An acoustic wave device includes a support substrate, a silicon nitride film stacked on the support substrate, a silicon oxide film stacked on the silicon nitride film, a piezoelectric body stacked on the silicon oxide film and made of lithium tantalite, and an IDT electrode provided on one main surface of the piezoelectric body. For a wavelength normalized film thickness of the piezoelectric body, an Euler angle of the piezoelectric body, a wavelength normalized film thickness of the silicon nitride film, a wavelength normalized film thickness of the silicon oxide film, and a wavelength normalized film thickness of the IDT electrode, values are set so that at least one of a response intensity of a first higher order mode, corresponding to the response intensity of a second higher order mode, and of a response intensity of a third higher mode is greater than about −2.4.

A method of manufacturing a packaged surface acoustic wave filter chip is disclosed. The method can include providing a structure having first interdigital transducer electrodes formed with a first piezoelectric layer, second interdigital transducer electrodes formed with a second piezoelectric layer, and a substrate between the first and second piezoelectric layers. The method can include forming a plurality of through electrodes extending at least partially through a thickness of the structure such that a first set of through electrodes of the plurality of through electrodes are electrically connected to the first interdigital transducer electrodes and a second set of through electrodes of the plurality of through electrodes are electrically isolated from the first interdigital transducer electrodes.

An elastic wave device includes an IDT electrode on a second main surface of an element substrate that includes a piezoelectric layer, a support layer on the second main surface and surrounding the IDT electrode, a cover member on the support layer, and routing wiring lines extending from the second main surface of the element substrate onto side surfaces of the element substrate.

An acoustic wave device includes an element substrate having piezoelectricity, a functional electrode on a first main surface of the element substrate, an extended wiring line electrically connected to the functional electrode and extending from the first main surface to a side surface of the element substrate, an external terminal electrically connected to the extended wiring line and on a second main surface of the element substrate, a first resin portion to seal the acoustic wave device, and a second resin portion at least between the extended wiring line on the side surface and the first resin portion. The second resin portion has a lower Young's modulus than the first resin portion.

The present disclosure provides a package structure of an air gap type semiconductor device and its fabrication method. The fabrication method includes forming a bonding layer having a first opening on a carrier; disposing a semiconductor chip on the bonding layer, thereby forming a first cavity at the first opening, where the first cavity is at least aligned with a portion of an active region of the semiconductor chip; performing an encapsulation process to encapsulate the semiconductor chip on the carrier; lastly, forming through holes passing through the carrier where each through hole is aligned with a corresponding input/output electrode region of the semiconductor chip, and forming interconnection structures on a side of the carrier different from a side with the bonding layer, where each interconnection structure passes through a corresponding through hole and is electrically connected to an corresponding input/output electrode.

The present disclosure provides a package structure of an air gap type semiconductor device and its fabrication method. The fabrication method includes forming a bonding layer having a first opening on a carrier; disposing a semiconductor chip on the bonding layer, thereby forming a first cavity at the first opening, where the first cavity is at least aligned with a portion of an active region of the semiconductor chip; performing an encapsulation process to encapsulate the semiconductor chip on the carrier; lastly, forming through holes passing through the carrier where each through hole is aligned with a corresponding input/output electrode region of the semiconductor chip, and forming interconnection structures on a side of the carrier different from a side with the bonding layer, where each interconnection structure passes through a corresponding through hole and is electrically connected to an corresponding input/output electrode.

A power noise filter and a supply modulator including the same, and a wireless communication device including the power noise filter are provided. The power noise filter includes a band stop filter and a low pass filter. The band stop filter includes an inductor and a first capacitor, which are connected in parallel between first and second nodes. The first node receives a first voltage, which is filtered by the band pass filter to thereby generate a second voltage at the second node. The first low pass filter includes the inductor and a second capacitor, which has one end connected to the second node and an opposite end connected to a ground source.

An acoustic wave device is disclosed. The acoustic wave device can include a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first substrate portion and the second substrate portion. The acoustic wave device can include a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion. The piezoelectric layer can be arranged such that a region over the third substrate portion is free from the piezoelectric layer. The acoustic wave device can include a filter circuit formed on the first portion of the piezoelectric layer. The acoustic wave device can include a cancelation circuit on the second portion of the piezoelectric layer.

An acoustic wave device is disclosed. The acoustic wave device can include a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first substrate portion and the second substrate portion. The acoustic wave device can include a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion. The piezoelectric layer can be arranged such that a region over the third substrate portion is free from the piezoelectric layer. The acoustic wave device can include a filter circuit formed on the first portion of the piezoelectric layer. The acoustic wave device can include a cancelation circuit on the second portion of the piezoelectric layer.