A filter device includes a first filter and a second filter. The first filter and the second filter are disposed in parallel between a first terminal and a second terminal. A first passband of the filter device includes at least part of a second passband of the first filter. The first passband includes at least part of a third passband of the second filter. The second passband is narrower than the first passband. The third passband is narrower than the first passband. The third passband has a center frequency higher than a center frequency of the second passband. The first filter includes multiple elastic wave resonators and a first capacitive element. The first capacitive element is connected in parallel with the first elastic wave resonator.

A multiplexer includes a common terminal, a first terminal, a second terminal, and a third terminal, a first filter, a second filter, and a third filter. With a frequency f3 being defined as Mf1Nf2 or Mf2Nf1, M and N being natural numbers, f1 being a frequency included in a first passband of the first filter and f2 being a frequency included in a second passband of the second filter, at least a part of a range of frequency f3 overlaps a third passband of the third filter. No acoustic wave resonator is connected between the common terminal and a first parallel arm resonance circuit. A fractional bandwidth of the first parallel arm resonance circuit is smaller than a maximum value of a fractional bandwidth of each of at least one serial arm resonance circuit.

Embodiments of this disclosure relate to acoustic wave filters configured to filter radio frequency signals. An acoustic wave filter includes a first bulk acoustic wave resonator on a substrate, a second bulk acoustic wave resonator on the substrate, a conductor electrically connecting the first bulk acoustic wave resonator in anti-series with the second bulk acoustic wave resonator, and an air gap positioned between the conductor and a surface of the substrate. The air gap can reduce parasitic capacitance associated with the conductor. Acoustic wave filters disclosed herein can suppress a second harmonic.

Embodiments of this disclosure relate to bulk acoustic wave resonators on a substrate. The bulk acoustic wave resonators include a first bulk acoustic wave resonator, a second bulk acoustic wave resonator, a conductor electrically connecting the first bulk acoustic wave resonator to the second bulk acoustic wave resonator, and an air gap positioned between the conductor and a surface of the substrate.

Disclosed is a radio frequency multiplexer having an M number of multiplexer branches each having an outer port terminal coupled to a common outer node, wherein M is a positive counting number. Each of the M number of multiplexer branches comprises a multi-bandpass filter configured to filter an N number of bands multiplexed by the radio frequency multiplexer to pass an individual group of N/M bands, wherein N is a positive counting number greater than one and equal to a total number of bands to be multiplexed. Each of the M number of multiplexer branches further includes an N/M number of resonator branches each having a band port terminal configured to pass a single band and an inner branch terminal coupled to an inner port terminal of the multi-bandpass filter at a common inner node.

An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a ceramic substrate, a first piezoelectric layer positioned on the ceramic substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the ceramic substrate, a second piezoelectric layer positioned on the ceramic substrate, and an interdigital transducer electrode on the second piezoelectric layer.

An acoustic wave component is disclosed. The acoustic wave component can include a bulk acoustic wave resonator and a surface acoustic wave device. The bulk acoustic wave resonator can include a first portion of a glass substrate, a first piezoelectric layer positioned on the glass substrate, and electrodes positioned on opposing sides of the first piezoelectric layer. The surface acoustic wave device can include a second portion of the glass substrate, a second piezoelectric layer positioned on the glass substrate, and an interdigital transducer electrode on the second piezoelectric layer.

A bulk acoustic wave resonator is disclosed. The bulk acoustic wave resonator can include a ceramic substrate, and a piezoelectric layer on the ceramic substrate. The bulk acoustic wave resonator can also include first and second electrodes positioned on opposing sides of the piezoelectric layer. The bulk acoustic wave resonator can also include passivation layers that includes a first passivation layer and a second passivation layer. The first passivation layer can be positioned between the ceramic substrate and the first electrode. The second electrode can be positioned between the piezoelectric layer and the second passivation layer. The bulk acoustic wave resonator can further include a frame structure along an edge of an active region of the bulk acoustic wave resonator.

A multiplexer includes a common terminal, a first terminal, a second terminal, and a third terminal, a first filter, a second filter, and a third filter. With a frequency f3 being defined as Mf1Nf2 or Mf2Nf1, M and N being natural numbers, f1 being a frequency included in a first passband of the first filter and f2 being a frequency included in a second passband of the second filter, at least a part of a range of frequency f3 overlaps a third passband of the third filter. No acoustic wave resonator is connected between the common terminal and a first parallel arm resonance circuit. A fractional bandwidth of the first parallel arm resonance circuit is smaller than a maximum value of a fractional bandwidth of each of at least one serial arm resonance circuit.

A front end module includes a filter portion including filters each including at least one bulk-acoustic wave resonator including a first electrode, a piezoelectric layer, and a second electrode stacked in order, and the filters each have a different allocated passband such that a frequency band of each passband overlaps a portion of a frequency band of an adjacent passband; and a switch portion to be selectively connected to the filters to form a path of a wireless frequency signal.