High-data rate channel interface modules and equalization methods employing a finite impulse response (FIR) analog receive filter. Embodiments include an illustrative channel interface module having multiple amplifier-based delay units arranged in a sequential chain to convert an analog input signal into a set of increasingly-delayed analog signals that are weighted and combined together with the analog input signal to form an equalized signal; and a symbol decision element operating on the equalized signal to obtain a sequence of symbol decisions. An interface that extracts received data from the sequence of symbol decisions. The delay units may employ one or more delay cells each having a common-source amplifier stage followed by a source follower output stage, the two stages providing approximately equal portions of the propagation delay. An enhanced gate-to-drain capacitance in the common-source amplifier may increase propagation delay while reducing bandwidth limitations.

A charge pump apparatus is provided. A two-phase clock signal and a four-phase clock signal for respectively driving a two-phase charge pump circuit and a four-phase charge pump circuit are generated according to delay signals of coupling nodes between delay circuits of a ring oscillator circuit.

A phase shifter for altering the phase of a radio frequency signal is disclosed herein. A Lange coupler is used having reflective ports that are coupled to artificial transmission lines. The artificial transmission lines provide a reflection transmission path, the length of which can be determined by digital control lines. Transistors placed along the length of the central trace provide independent paths to ground that serve to shorten the electrical length of the ATL. Accordingly, by selectively turning the transistors on/off, the electrical length of the ATL can be selected and thus the amount of phase delay introduced by the phase shifter.

A system for controlling a hold-margin in a semiconductor memory device includes a programmable RC network communicatively coupled to a delay logic circuit, a latch clock generator and a latch circuit. A delay associated with a clock path is induced using a combination of a logic circuit and a wire placed across at least one of a column and a row of the semiconductor memory device. A delay associated with the data path is induced using a combination of the delay logic circuit and at least one of the load cell and a wire routed across at least one of a column and a row of the semiconductor memory device. The system controls the hold-margin based on the delay associated with the data path and the delay associated with the clock path.

A TDC circuit includes a plurality of delay elements connected in series. The TDC circuit includes a reference signal supply circuit that randomly selects one of the plurality of delay elements to supply a reference signal. The TDC circuit includes a plurality of latch circuits that latch a clock signal in response to outputs of the plurality of delay elements. The TDC circuit includes an output circuit that codes output signals output from the plurality of latch circuits and outputs a digital code indicating a relative time relationship of the clock signal with respect to the reference signal.

An apparatus including a memory subsystem. The memory subsystem includes a data input and a clock input. The apparatus also includes a variable delay circuit coupled to one of the data input or the clock input. Additionally, the apparatus includes a controller coupled to the variable delay circuit. The controller is configured to dynamically control the delay of the variable delay circuit. The controller may adjust the delay of the variable delay circuit based on at least one of timing data for a memory subsystem design of the memory subsystem, timing data for the memory subsystem, a voltage applied to the memory subsystem, or a temperature of the memory subsystem.

A driver circuit includes a first deglitcher circuit that delays a rising edge or a falling edge of an input signal according to a mode control signal and supplies a first output signal. A second deglitcher circuit receives the first output signal and delays either a rising edge or a falling edge of the first output signal by a second delay according to the mode control signal and supplies a second output signal. Logic gates combine the first and second output signals to supply gate control signals for output transistors to drive the driver circuit output. A sum of the first delay and the second delay determines the total deglitch time defining a pulse width of pulses that are suppressed by the driver circuit and the second delay determines a non-overlap time. The non-overlap time overlaps in time with the total deglitch time.

A delaying element includes a first XOR logic gate and a second XOR logic gate. A first input of the first XOR logic gate defines an input terminal. A first input of the second XOR logic gate is connected to an output of the first XOR logic gate. An output of the second XOR logic gate defines an output terminal. The second inputs of the first and second XOR logic gates are connected to a second input terminal.

A semiconductor system includes: a controller suitable for outputting an external clock signal and a command/address signal; and a semiconductor device suitable for selecting one of pre-stored code values of a delay control signal to output an initial value control signal according to the command/address signal, and outputting an internal clock signal by delaying the external clock signal by a predetermined time based on the delay control signal having an initial value that is set in response to the initial value control signal.

A delay signal generating apparatus has a digitally controlled delay line and a control circuit. The digitally controlled delay line has a coarse delay circuit and a fine delay circuit. The coarse delay circuit generates a plurality of coarse delay signals by applying a plurality of different coarse delay amounts to an input signal, respectively, wherein the different coarse delay amounts are set by a first control input. The fine delay circuit generates a fine delay signal having a fine delay amount with respect to the input signal by performing phase interpolation based on the coarse delay signals, wherein the fine delay amount is set by a second control input. The control circuit generates the first control input to the coarse delay circuit, and generates the second control input to the fine delay circuit, wherein the control circuit does not change the first control input unless one of the coarse delay signals has no contribution to the fine delay signal according to the second control input.