Patent classifications
H03H11/32
TRANSFORMER-BASED CURRENT-REUSE AMPLIFIER WITH EMBEDDED IQ GENERATION FOR COMPACT IMAGE REJECTION ARCHITECTURE IN MULTI-BAND MILLIMETER-WAVE 5G COMMUNICATION
According to one embodiment, a transformer-based in-phase and quadrature (IQ) includes a differential balun having a first inductor and a second inductor. The first inductor has a first input terminal and a first output terminal. The second inductor has a second input terminal and a second output terminal. Additionally, the IQ generator circuit includes a third inductor magnetically coupled with the first inductor. The third inductor has a first isolation terminal and a third output terminal. The IQ generator circuit also includes a fourth inductor magnetically coupled with the second inductor. The fourth inductor has a second isolation terminal and a fourth output terminal. The IQ generator circuit additionally includes a first transistor coupled to the first input terminal of the first inductor. Further, the generator circuit includes a second transistor coupled to the second input terminal of the second inductor. The first transistor, the second transistor, the first inductor, and the second inductor form a part of a differential amplifier.
LO leakage suppression in frequency conversion circuits
A processor may calibrate a first actuator electrically coupled to a transconductance stage of the frequency conversion circuit. The transconductance stage may be configured to receive a differential signal input. Calibrating a first actuator may adjust a first basis vector associated with a differential direct current (DC) output of the transconductance stage. A processor may calibrate a second actuator electrically coupled to receive the differential current output of the transconductance stage and electrically coupled to a set of commutating devices of the frequency conversion circuit. The commutating devices may be configured to receive differential LO inputs. Calibrating a second actuator may adjust a second basis vector associated with a differential impedance of the set of commutating devices. A processor may offset responsive to adjusting the first basis vector and the second basis vector, the first leakage basis vector and second leakage basis vector of the LO leakage signal.
LO leakage suppression in frequency conversion circuits
A processor may calibrate a first actuator electrically coupled to a transconductance stage of the frequency conversion circuit. The transconductance stage may be configured to receive a differential signal input. Calibrating a first actuator may adjust a first basis vector associated with a differential direct current (DC) output of the transconductance stage. A processor may calibrate a second actuator electrically coupled to receive the differential current output of the transconductance stage and electrically coupled to a set of commutating devices of the frequency conversion circuit. The commutating devices may be configured to receive differential LO inputs. Calibrating a second actuator may adjust a second basis vector associated with a differential impedance of the set of commutating devices. A processor may offset responsive to adjusting the first basis vector and the second basis vector, the first leakage basis vector and second leakage basis vector of the LO leakage signal.
Systems and methods for general-purpose, high-performance transversal filter processing
Provided is a transversal radio frequency filter circuit having a low noise amplifier connected along an input signal path, a first power divider connected between the low noise amplifier and four single taps, and an output path connected to the outputs of each of the four single taps. Each of the four single taps having a coefficient control mechanism, a polarity selection mechanism, and a time delay element. The coefficient control mechanism can include a wideband digital step attenuator configured to support high control range of the coefficient. Additionally, the circuit can include a second power divider connected between the outputs of each of the four single taps and the output path. The circuit can further include a field-programmable gate array configured to control coefficient control mechanisms, the polarity selection mechanisms, and the time delay elements.
Systems and methods for general-purpose, high-performance transversal filter processing
Provided is a transversal radio frequency filter circuit having a low noise amplifier connected along an input signal path, a first power divider connected between the low noise amplifier and four single taps, and an output path connected to the outputs of each of the four single taps. Each of the four single taps having a coefficient control mechanism, a polarity selection mechanism, and a time delay element. The coefficient control mechanism can include a wideband digital step attenuator configured to support high control range of the coefficient. Additionally, the circuit can include a second power divider connected between the outputs of each of the four single taps and the output path. The circuit can further include a field-programmable gate array configured to control coefficient control mechanisms, the polarity selection mechanisms, and the time delay elements.
Single-phase differential conversion circuit, signal processing method for use therewith, and reception apparatus
This technology relates to a single-phase differential conversion circuit for improving the linearity of input/output characteristics, a signal processing method for use with the circuit, and a reception apparatus. The single-phase differential conversion circuit includes a first source-grounded amplifier and a second source-grounded amplifier. Each of the amplifiers includes a transconductance amplifier section including a transistor for converting an AC component of input potential to a current, a diode load section including a transistor in a diode connection configured as a first load, and a large-signal distortion compensation circuit configured as a second load connected in parallel with the first load. The transistors of the first source-grounded amplifier are each a P-type MOS transistor, and the transistors of the second source-grounded amplifier are each an N-type MOS transistor. This technology is applied advantageously to a reception apparatus for receiving TV signals, for example.
Balance-unbalance converter and semiconductor integrated circuit having the same
Provided is a balance-unbalance converter including: a substrate; an unbalanced line; a first balanced line; and a second balanced line on the substrate. The unbalanced line has a first end at which an unbalanced signal is input, and an opened second end. The first balanced line is in parallel with a line portion of the unbalanced line from the first end to a midpoint of the unbalanced line, and has a midpoint-side third end at which a balanced signal is output, and a grounded fourth end. The second balanced line is in parallel with a line portion of the unbalanced line from the second end to the midpoint, and has a midpoint-side fifth end at which the balanced signal is output, and a grounded sixth end. The unbalanced line is bent at the midpoint toward an opposite side of the first and second balanced lines.
Balance-unbalance converter and semiconductor integrated circuit having the same
Provided is a balance-unbalance converter including: a substrate; an unbalanced line; a first balanced line; and a second balanced line on the substrate. The unbalanced line has a first end at which an unbalanced signal is input, and an opened second end. The first balanced line is in parallel with a line portion of the unbalanced line from the first end to a midpoint of the unbalanced line, and has a midpoint-side third end at which a balanced signal is output, and a grounded fourth end. The second balanced line is in parallel with a line portion of the unbalanced line from the second end to the midpoint, and has a midpoint-side fifth end at which the balanced signal is output, and a grounded sixth end. The unbalanced line is bent at the midpoint toward an opposite side of the first and second balanced lines.
WIDE BANDWIDTH RADIO FREQUENCY (RF) AMPLIFIER
An amplifier circuit includes an amplifier, a balun comprising a primary side having a primary inductance and a secondary side having a secondary inductance, the primary side coupled to an output of the amplifier, the secondary side coupled to a first output path of the amplifier circuit and a second output path of the amplifier circuit, a shunt inductance coupled to the first output path; and a compensating inductance in the balun, the compensating inductance coupled between a first node and a second node, the first node coupling the compensating inductance to the first output path, the second node coupling the secondary inductance to the compensating inductance.
WIDE BANDWIDTH RADIO FREQUENCY (RF) AMPLIFIER
An amplifier circuit includes an amplifier, a balun comprising a primary side having a primary inductance and a secondary side having a secondary inductance, the primary side coupled to an output of the amplifier, the secondary side coupled to a first output path of the amplifier circuit and a second output path of the amplifier circuit, a shunt inductance coupled to the first output path; and a compensating inductance in the balun, the compensating inductance coupled between a first node and a second node, the first node coupling the compensating inductance to the first output path, the second node coupling the secondary inductance to the compensating inductance.