A radio-frequency module includes a multilayer substrate, an input switch, an output switch, and filters. A switch IC is disposed on a main surface of the multilayer substrate. The input switch is disposed in the switch IC and includes a first input terminal and first output terminals. The output switch is disposed in the switch IC and includes second input terminals and a second output terminal. The filters are disposed outside the switch IC and are connected to the first output terminals and the second input terminals. In a plan view of the multilayer substrate, the first input terminal and the first output terminals are disposed close to a first side of an exterior of the switch IC, and the second input terminals and the second output terminal are disposed close to a second side different from the first side of the exterior of the switch IC.

A radio-frequency module includes a multilayer substrate, an input switch, an output switch, and filters. A switch IC is disposed on a main surface of the multilayer substrate. The input switch is disposed in the switch IC and includes a first input terminal and first output terminals. The output switch is disposed in the switch IC and includes second input terminals and a second output terminal. The filters are disposed outside the switch IC and are connected to the first output terminals and the second input terminals. In a plan view of the multilayer substrate, the first input terminal and the first output terminals are disposed close to a first side of an exterior of the switch IC, and the second input terminals and the second output terminal are disposed close to a second side different from the first side of the exterior of the switch IC.

An RF quasi circulator circuit is described herein. In accordance with one example of the disclosure the circuit includes a receive port, a transmit port and an antenna port as well as a differential amplifier stage having a first input, a second input and an output that is coupled to the receive port. The circuit further includes a first phase shifting element and a second phase shifting element. The first phase shifting element is coupled between the transmit port and the first input of the differential amplifier and the second phase shifting element is coupled between the transmit port and the second input of the differential amplifier. A tunable impedance is coupled to the differential amplifier, and the antenna port is coupled to the first input of the differential amplifier. The tunable impedance is controlled to tune the damping in a signal path from the transmit port to the receive port.

An RF quasi circulator circuit is described herein. In accordance with one example of the disclosure the circuit includes a receive port, a transmit port and an antenna port as well as a differential amplifier stage having a first input, a second input and an output that is coupled to the receive port. The circuit further includes a first phase shifting element and a second phase shifting element. The first phase shifting element is coupled between the transmit port and the first input of the differential amplifier and the second phase shifting element is coupled between the transmit port and the second input of the differential amplifier. A tunable impedance is coupled to the differential amplifier, and the antenna port is coupled to the first input of the differential amplifier. The tunable impedance is controlled to tune the damping in a signal path from the transmit port to the receive port.

A radio-frequency module includes a multilayer substrate, an input switch, an output switch, and filters. A switch IC is disposed on a main surface of the multilayer substrate. The input switch is disposed in the switch IC and includes a first input terminal and first output terminals. The output switch is disposed in the switch IC and includes second input terminals and a second output terminal. The filters are disposed outside the switch IC and are connected to the first output terminals and the second input terminals. In a plan view of the multilayer substrate, the first input terminal and the first output terminals are disposed close to a first side of an exterior of the switch IC, and the second input terminals and the second output terminal are disposed close to a second side different from the first side of the exterior of the switch IC.

Embodiments of the present application provide an intra-band combiner-divider and a multisystem combining platform, and the intra-band combiner-divider includes: a first-level duplexer, an intra-band combination unit, an intra-band division unit, and a second-level duplexer. In the embodiments of the present application, two ends of the intra-band combiner-divider are connected to the first-level duplexer and the second-level duplexer, so that the intra-band combiner-divider can separately process uplink and downlink signals, thereby reducing PIM of a communication system and improving receiver sensitivity of a base station.

Embodiments of the present application provide an intra-band combiner-divider and a multisystem combining platform, and the intra-band combiner-divider includes: a first-level duplexer, an intra-band combination unit, an intra-band division unit, and a second-level duplexer. In the embodiments of the present application, two ends of the intra-band combiner-divider are connected to the first-level duplexer and the second-level duplexer, so that the intra-band combiner-divider can separately process uplink and downlink signals, thereby reducing PIM of a communication system and improving receiver sensitivity of a base station.

A radio-frequency module includes a multilayer substrate, an input switch, an output switch, and filters. A switch IC is disposed on a main surface of the multilayer substrate. The input switch is disposed in the switch IC and includes a first input terminal and first output terminals. The output switch is disposed in the switch IC and includes second input terminals and a second output terminal. The filters are disposed outside the switch IC and are connected to the first output terminals and the second input terminals. In a plan view of the multilayer substrate, the first input terminal and the first output terminals are disposed close to a first side of an exterior of the switch IC, and the second input terminals and the second output terminal are disposed close to a second side different from the first side of the exterior of the switch IC.

A radio-frequency module includes a multilayer substrate, an input switch, an output switch, and filters. A switch IC is disposed on a main surface of the multilayer substrate. The input switch is disposed in the switch IC and includes a first input terminal and first output terminals. The output switch is disposed in the switch IC and includes second input terminals and a second output terminal. The filters are disposed outside the switch IC and are connected to the first output terminals and the second input terminals. In a plan view of the multilayer substrate, the first input terminal and the first output terminals are disposed close to a first side of an exterior of the switch IC, and the second input terminals and the second output terminal are disposed close to a second side different from the first side of the exterior of the switch IC.

A matching circuit provides broadband impedance matching of first and second devices for processing RF signals in a broadband frequency range, the first device being inherently capacitive. The matching circuit includes a shunt inductor that transforms impedance of the first device to matching impedance at a matching resonance frequency in a middle portion of the broadband frequency range, and a series resonance circuit that has a series resonance frequency approximately the same as the matching resonance frequency. The series resonance circuit includes an inductor and a capacitor connected in series to the first device, and further transforms the matching impedance of the first device and the shunt inductor to a design matching impedance corresponding to the broadband frequency range. One end of the shunt inductor is connected to the first device, between the series resonance circuit and the first device or to an opposite side of the first device.