The present embodiment relates to an oscillator circuit, a semiconductor integrated circuit device and a method for frequency correction of an oscillator circuit, and more particularly, to an oscillator circuit, a semiconductor integrated circuit device and a method for frequency correction of an oscillator circuit capable of stably maintaining an output frequency of a clock signal even when a temperature of the semiconductor integrated circuit device changes.

Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.

Various embodiments of the present application are directed towards a level shifter with temperature compensation. In some embodiments, the level shifter comprises a transistor, a first resistor, and a second resistor. The first resistor is electrically coupled from a first source/drain of the transistor to a supply node, and the second resistor is electrically coupled from a second source/drain of the transistor to a reference node. Further, the first and second resistors have substantially the same temperature coefficients and comprise group III-V semiconductor material. By having both the first and second resistors, the output voltage of the level shifter is defined by the resistance ratio of the resistors. Further, since the first and second resistors have the same temperature coefficients, temperature induced changes in resistance is largely cancelled out in the ratio and the output voltage is less susceptible to temperature induced change than the first and second resistors individually.

An oscillator circuit includes a first comparator that outputs a first signal indicative of a comparison result between an input potential and a threshold, a second comparator that outputs a second signal indicative of a comparison result between an input potential and the threshold, a RS flip-flop circuit that receives the first signal and the second signal and outputs first and second oscillation signals, a first charge/discharge unit that charges and discharges a first capacitor based on the first oscillation signal, a second charge/discharge unit that charges and discharges a second capacitor based on the second oscillation signal, a first dummy switch controlled to be on and off according to the second oscillation signal and adding a predetermined capacity to a first node, and a second dummy switch controlled to be on and off according to the first oscillation signal and adding a predetermined capacity to a second node.

A circuit device includes a control circuit configured to control a transistor current based on a detected temperature. The detected temperature is a temperature detected by a temperature sensor circuit that detects a temperature of a transistor. The transistor charges a load to which a power supply voltage is supplied. The transistor current is a current flowing through the transistor during charging. The control circuit reduces the transistor current when the detected temperature is higher than a first threshold value, and increases the transistor current when the detected temperature is lower than a second threshold value lower than the first threshold value.

A circuit device includes a control circuit configured to control a transistor current based on a detected temperature. The detected temperature is a temperature detected by a temperature sensor circuit that detects a temperature of a transistor. The transistor charges a load to which a power supply voltage is supplied. The transistor current is a current flowing through the transistor during charging. The control circuit reduces the transistor current when the detected temperature is higher than a first threshold value, and increases the transistor current when the detected temperature is lower than a second threshold value lower than the first threshold value.

The present invention concerns a method and a device for increasing the reliability of a power module composed of plural power semiconductors that are connected in parallel, the power semiconductors being connected to the external pins of the package of the power module through metallic connections. The invention - selects one power semiconductor among the power semiconductors connected in parallel according to a criterion. - applies a same input patient to the not selected power semiconductors connected in parallel. - increases the temperature of the selected power semiconductor in order to reach a target temperature of tlic power semicon- ductor dunng a time duration m order to achieve and interface grain homogenisation of the metallic connections of tlic selected power semiconductor. - applies the same input pattern to tlic selected pow er semiconductor after tlic time duration.

The present invention concerns a method and a device for increasing the reliability of a power module composed of plural power semiconductors that are connected in parallel, the power semiconductors being connected to the external pins of the package of the power module through metallic connections. The invention - selects one power semiconductor among the power semiconductors connected in parallel according to a criterion. - applies a same input patient to the not selected power semiconductors connected in parallel. - increases the temperature of the selected power semiconductor in order to reach a target temperature of tlic power semicon- ductor dunng a time duration m order to achieve and interface grain homogenisation of the metallic connections of tlic selected power semiconductor. - applies the same input pattern to tlic selected pow er semiconductor after tlic time duration.

A solid-state imaging device includes: a pixel unit that outputs a pixel signal corresponding to an amount of incident light; an A/D converter that performs A/D conversion on the pixel signal; and a D/A conversion circuit that generates a reference signal to be used by the A/D converter. The D/A conversion circuit includes a first buffer circuit that outputs a base voltage VTOP for generating the reference signal, and the first buffer circuit includes a differential pair circuit including a first transistor and a second transistor, and a suppression circuit that suppresses a variation in the base voltage by canceling out a characteristic difference between the first transistor and the second transistor.

In an embodiment a ring oscillator circuit includes a chain of cascade-coupled inverter stages coupled between an oscillator supply voltage node and a reference voltage node, the oscillator supply voltage node configured to provide an oscillator supply voltage, a current generator circuit coupled between the oscillator supply voltage node and a system supply voltage node configured to provide a system supply voltage, the current generator circuit being configured to inject a current into the oscillator supply voltage node and a biasing circuit including a first bias control transistor and a second bias control transistor coupled in series between the reference voltage node and the oscillator supply voltage node, wherein the first bias control transistor is configured to selectively couple the reference voltage node and the oscillator supply voltage node in response to the oscillator control signal being indicative that the ring oscillator circuit is in an inactive operation state.