Described herein are apparatuses and methods for applying high voltage, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., using a high voltage (e.g., MOSFET) gate driver circuit having a high voltage isolation and a low inductance. In particular, described herein are multi-core pulse transformers comprising independent transformer cores arranged in parallel on opposite sides of a substrate. The transformer cores may have coaxial primary and secondary windings. Also describe are pulse generators including multi-core pulse transformers arranged in parallel (e.g., on opposite sides of a PCB) to reduce MOSFET driver gate inductance.

A comparator circuit configured to output an output voltage at a first logic level, upon an input voltage exceeding a first threshold voltage, and output the output voltage at a second logic level, upon the input voltage dropping below a second threshold voltage lower than the first threshold voltage. The comparator circuit includes a converter circuit configured to convert the input voltage of the comparator circuit into a first voltage and a second voltage lower than the first voltage, and a logic circuit configured to output a voltage, as the output voltage of the comparator circuit, that is at the first logic level, upon the first voltage exceeding a third threshold voltage, and at the second logic level, upon the second voltage dropping below a fourth threshold voltage lower than the third threshold voltage.

Oscillator circuitry is disclosed. The oscillator circuitry comprises a free-running oscillator for generating pulses at a frequency, and a frequency adjustment circuit for adaptively adjusting the frequency of the free-running oscillator. The frequency adjustment circuit comprises a counter configured to count a number of pulses generated by the free-running oscillator and logic configured to compare the number of pulses with an expected number of pulses (corresponding to a target frequency) to determine a difference value and to adjust the frequency of the free-running oscillator in dependence on the difference value. The frequency adjustment circuit is configured, in response to receiving a synchronisation pulse, to trigger an update of the number of pulses to be compared.

Oscillator circuitry is disclosed. The oscillator circuitry comprises a free-running oscillator for generating pulses at a frequency, and a frequency adjustment circuit for adaptively adjusting the frequency of the free-running oscillator. The frequency adjustment circuit comprises a counter configured to count a number of pulses generated by the free-running oscillator and logic configured to compare the number of pulses with an expected number of pulses (corresponding to a target frequency) to determine a difference value and to adjust the frequency of the free-running oscillator in dependence on the difference value. The frequency adjustment circuit is configured, in response to receiving a synchronisation pulse, to trigger an update of the number of pulses to be compared.

A semiconductor device has a cell region including active regions that extend in a first direction and in which are formed components of transistors. The transistors of the cell region are arranged to function as a scan insertion D flip flop (SDFQ). The SDFQ includes a multiplexer serially connected at an internal node to a D flip-flop (FF). The transistors of the multiplexer include data transistors for selecting a data input signal, the data transistors having a first channel configuration with a first channel size, and scan transistors of the multiplexer for selecting a scan input signal, the scan transistors having a second channel configuration with a second channel size. The second channel size is smaller than the first channel size.

A semiconductor device has a cell region including active regions that extend in a first direction and in which are formed components of transistors. The transistors of the cell region are arranged to function as a scan insertion D flip flop (SDFQ). The SDFQ includes a multiplexer serially connected at an internal node to a D flip-flop (FF). The transistors of the multiplexer include data transistors for selecting a data input signal, the data transistors having a first channel configuration with a first channel size, and scan transistors of the multiplexer for selecting a scan input signal, the scan transistors having a second channel configuration with a second channel size. The second channel size is smaller than the first channel size.

Described herein are apparatuses and methods for applying high voltage, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., using a high voltage (e.g., MOSFET) gate driver circuit having a high voltage isolation and a low inductance. In particular, described herein are multi-core pulse transformers comprising independent transformer cores arranged in parallel on opposite sides of a substrate. The transformer cores may have coaxial primary and secondary windings. Also describe are pulse generators including multi-core pulse transformers arranged in parallel (e.g., on opposite sides of a PCB) to reduce MOSFET driver gate inductance.

Described herein are apparatuses and methods for applying high voltage, sub-microsecond (e.g., nanosecond range) pulsed output to a biological material, e.g., tissues, cells, etc., using a high voltage (e.g., MOSFET) gate driver circuit having a high voltage isolation and a low inductance. In particular, described herein are multi-core pulse transformers comprising independent transformer cores arranged in parallel on opposite sides of a substrate. The transformer cores may have coaxial primary and secondary windings. Also describe are pulse generators including multi-core pulse transformers arranged in parallel (e.g., on opposite sides of a PCB) to reduce MOSFET driver gate inductance.

Configuration switch-for setting a specific configuration from a plurality of settable configurations, wherein the configuration switch-has at least one plurality of selectable, mutually differing RC combinations, wherein each RC combination has at least one specific, characteristic variable, which is associated with a settable configuration and wherein to set the specific configuration a specific RC combination is selected/selectable, so that via an output signal-on an output-of the configuration switch, which output signal-comprises the specific, characteristic variable of the selected RC combination, the specific configuration to be set is established based on the specific, characteristic variable.

In described examples of an integrated circuit (IC), an oscillator includes Schmitt trigger delay cells connected in a ring topology. The Schmitt trigger delay cells have a high input threshold approximately equal to Vdd and a low input threshold approximately equal to Vss to increase delay through each cell. An output buffer receives a phase signal from an output terminal of one of the Schmitt trigger delay cells and converts a transition phase signal to a faster transition clock signal. The output buffer has control circuitry that generates non-overlapping control signals in response to the phase signal, to control an output stage to generate the fast transition clock signal while preventing short circuit current in the output stage.