Patent classifications
H03K3/36
HIGH VOLTAGE PRE-PULSING
Some embodiments of the invention include a pre-pulse switching system. The pre-pulsing switching system may include: a power source configured to provide a voltage greater than 100 V; a pre-pulse switch coupled with the power source and configured to provide a pre-pulse having a pulse width of T.sub.pp; and a main switch coupled with the power source and configured to provide a main pulse such that an output pulse comprises a single pulse with negligible ringing. The pre-pulse may be provided to a load by closing the pre-pulse switch while the main switch is open. The main pulse may be provided to the load by closing the main switch after a delay T.sub.delay after the pre-pulse switch has been opened.
HIGH VOLTAGE PRE-PULSING
Some embodiments of the invention include a pre-pulse switching system. The pre-pulsing switching system may include: a power source configured to provide a voltage greater than 100 V; a pre-pulse switch coupled with the power source and configured to provide a pre-pulse having a pulse width of T.sub.pp; and a main switch coupled with the power source and configured to provide a main pulse such that an output pulse comprises a single pulse with negligible ringing. The pre-pulse may be provided to a load by closing the pre-pulse switch while the main switch is open. The main pulse may be provided to the load by closing the main switch after a delay T.sub.delay after the pre-pulse switch has been opened.
SEMICONDUCTOR INTEGRATED CIRCUIT
Provided is a semiconductor integrated circuit including an oscillation circuit configured to output an oscillation signal, a heater configured to heat the oscillation circuit, a temperature sensor configured to detect a temperature of the oscillation circuit, and a nonvolatile memory configured to store temperature correction data. The oscillation circuit controls a frequency of the oscillation signal based on an output signal of the temperature sensor and the temperature correction data.
SEMICONDUCTOR INTEGRATED CIRCUIT
Provided is a semiconductor integrated circuit including an oscillation circuit configured to output an oscillation signal, a heater configured to heat the oscillation circuit, a temperature sensor configured to detect a temperature of the oscillation circuit, and a nonvolatile memory configured to store temperature correction data. The oscillation circuit controls a frequency of the oscillation signal based on an output signal of the temperature sensor and the temperature correction data.
High voltage pre-pulsing
Some embodiments of the invention include a pre-pulse switching system. The pre-pulsing switching system may include: a power source configured to provide a voltage greater than 100 V; a pre-pulse switch coupled with the power source and configured to provide a pre-pulse having a pulse width of T.sub.pp; and a main switch coupled with the power source and configured to provide a main pulse such that an output pulse comprises a single pulse with negligible ringing. The pre-pulse may be provided to a load by closing the pre-pulse switch while the main switch is open. The main pulse may be provided to the load by closing the main switch after a delay T.sub.delay after the pre-pulse switch has been opened.
High voltage pre-pulsing
Some embodiments of the invention include a pre-pulse switching system. The pre-pulsing switching system may include: a power source configured to provide a voltage greater than 100 V; a pre-pulse switch coupled with the power source and configured to provide a pre-pulse having a pulse width of T.sub.pp; and a main switch coupled with the power source and configured to provide a main pulse such that an output pulse comprises a single pulse with negligible ringing. The pre-pulse may be provided to a load by closing the pre-pulse switch while the main switch is open. The main pulse may be provided to the load by closing the main switch after a delay T.sub.delay after the pre-pulse switch has been opened.
Power supply circuit and display apparatus
The present disclosure provides a power supply circuit and a display apparatus. The power supply circuit includes a power management integrated circuit. The power management integrated circuit includes a driving pin configured to transmit a drive signal. The power management integrated circuit includes a power transistor with a control terminal connected to the driving pin, a first terminal connected to a first power source, and a second terminal connected to a load. The power transistor is configured to supply a voltage to the load.
Energy loaded dielectrics, systems including energy loaded dielectrics, and methods for fabrication and use thereof
A dielectric structure is loaded with energy (e.g., charge), which is retained therein until a trigger causes rapid discharge of the loaded energy and generation of an accompanying electromagnetic pulse (EMP). By appropriate design of the dielectric structure and/or trigger, the waveform of the EMP resulting from the rapid discharge can be tailored. Features of the dielectric structure can be modified and/or other devices can be coupled to the dielectric structure to also tailor the EMP, for example, to provide directionality. A modeling unit can predict the discharge in the dielectric structure and/or resulting EMP. The modeling unit can be used to determine charge density spatial distribution within the dielectric structure, shape of the dielectric structure, and/or actuation timing/location necessary to yield a desired waveform for the EMP emanating from the dielectric structure upon discharge.
Energy loaded dielectrics, systems including energy loaded dielectrics, and methods for fabrication and use thereof
A dielectric structure is loaded with energy (e.g., charge), which is retained therein until a trigger causes rapid discharge of the loaded energy and generation of an accompanying electromagnetic pulse (EMP). By appropriate design of the dielectric structure and/or trigger, the waveform of the EMP resulting from the rapid discharge can be tailored. Features of the dielectric structure can be modified and/or other devices can be coupled to the dielectric structure to also tailor the EMP, for example, to provide directionality. A modeling unit can predict the discharge in the dielectric structure and/or resulting EMP. The modeling unit can be used to determine charge density spatial distribution within the dielectric structure, shape of the dielectric structure, and/or actuation timing/location necessary to yield a desired waveform for the EMP emanating from the dielectric structure upon discharge.
CONFIGURATION SWITCH AND BUS PARTICIPANT COMPRISING SUCH A CONFIGURATION SWITCH
Configuration switch-for setting a specific configuration from a plurality of settable configurations, wherein the configuration switch-has at least one plurality of selectable, mutually differing RC combinations, wherein each RC combination has at least one specific, characteristic variable, which is associated with a settable configuration and wherein to set the specific configuration a specific RC combination is selected/selectable, so that via an output signal-on an output-of the configuration switch, which output signal-comprises the specific, characteristic variable of the selected RC combination, the specific configuration to be set is established based on the specific, characteristic variable.