Various RF plasma systems are disclosed that do not require a matching network. In some embodiments, the RF plasma system includes an energy storage capacitor; a switching circuit coupled with the energy storage capacitor, the switching circuit producing a plurality of pulses with a pulse amplitude and a pulse frequency, the pulse amplitude being greater than 100 volts; a resonant circuit coupled with the switching circuit. In some embodiments, the resonant circuit includes: a transformer having a primary side and a secondary side; and at least one of a capacitor, an inductor, and a resistor. In some embodiments, the resonant circuit having a resonant frequency substantially equal to the pulse frequency, and the resonant circuit increases the pulse amplitude to a voltage greater than 2 kV.

A level shifter is provided. The level shifter is located between a high-side circuit area and a low-side circuit area and includes a substrate, a buried island, and an isolation structure. The buried island has a first conductivity type and is located in the substrate. The isolation structure has a second conductivity type, is located in the substrate and surrounds the buried island. In addition, a dimension of the isolation structure near the high-side circuit area is different from a dimension of the isolation structure near the low-side circuit area. A semiconductor device including the level shifter is also provided.

A level shifter is provided. The level shifter is located between a high-side circuit area and a low-side circuit area and includes a substrate, a buried island, and an isolation structure. The buried island has a first conductivity type and is located in the substrate. The isolation structure has a second conductivity type, is located in the substrate and surrounds the buried island. In addition, a dimension of the isolation structure near the high-side circuit area is different from a dimension of the isolation structure near the low-side circuit area. A semiconductor device including the level shifter is also provided.

Some embodiments of the invention include a pre-pulse switching system. The pre-pulsing switching system may include: a power source configured to provide a voltage greater than 100 V; a pre-pulse switch coupled with the power source and configured to provide a pre-pulse having a pulse width of T.sub.pp; and a main switch coupled with the power source and configured to provide a main pulse such that an output pulse comprises a single pulse with negligible ringing. The pre-pulse may be provided to a load by closing the pre-pulse switch while the main switch is open. The main pulse may be provided to the load by closing the main switch after a delay T.sub.delay after the pre-pulse switch has been opened.

Some embodiments of the invention include a pre-pulse switching system. The pre-pulsing switching system may include: a power source configured to provide a voltage greater than 100 V; a pre-pulse switch coupled with the power source and configured to provide a pre-pulse having a pulse width of T.sub.pp; and a main switch coupled with the power source and configured to provide a main pulse such that an output pulse comprises a single pulse with negligible ringing. The pre-pulse may be provided to a load by closing the pre-pulse switch while the main switch is open. The main pulse may be provided to the load by closing the main switch after a delay T.sub.delay after the pre-pulse switch has been opened.

The present invention provides a circuit for generating a control voltage depending on voltage phase of an input signal. The circuit comprises a first transistor; a second transistor, a diode, a Zener diode and a capacitor. Base and collector of first transistor along with collector of second transistor are connected to a DC voltage source. Anode of the diode is connected to base of the first transistor and cathode of the diode receives the input signal. Anode of the Zener diode is connected to the base of the second transistor and cathode of the Zener diode connected to the collector of the first transistor. The capacitor is connected between cathode of the Zener diode and ground terminal. During positive half cycle and negative half of input signal, the circuit outputs a high control voltage and a low control voltage respectively.

The present disclosure relates to a device for generating a clock signal including a first photoresistor coupling a capacitive output node to a node receiving a first potential. A second photoresistor couples the capacitive node to a node receiving a second potential. The first and second photoresistors receive the same optical pulses of a mode-locked laser at instants in time offset by a first delay.

The present disclosure relates to a device for generating a clock signal including a first photoresistor coupling a capacitive output node to a node receiving a first potential. A second photoresistor couples the capacitive node to a node receiving a second potential. The first and second photoresistors receive the same optical pulses of a mode-locked laser at instants in time offset by a first delay.

An integrated oscillator has an R-S flipflop; a first and second capacitor; a current source transistor; first and second current-steering transistors, each having a source coupled to the current source transistor, with drains coupled to the first and second capacitor respectively. The first current-steering transistor has gate coupled to a first output of the R-S flipflop, and the second current-steering transistor has gate coupled to a second output of the R-S flipflop. The oscillator has a first sense inverter having input from the first capacitor and powered by a feedback circuit adapted to sense voltages on the first and second capacitor; and a second sense inverter having input from the second capacitor and powered by the feedback circuit. The R-S flipflop has a first input coupled to an output of the first sense inverter and a second input coupled to an output of the second sense inverter.

An integrated oscillator has an R-S flipflop; a first and second capacitor; a current source transistor; first and second current-steering transistors, each having a source coupled to the current source transistor, with drains coupled to the first and second capacitor respectively. The first current-steering transistor has gate coupled to a first output of the R-S flipflop, and the second current-steering transistor has gate coupled to a second output of the R-S flipflop. The oscillator has a first sense inverter having input from the first capacitor and powered by a feedback circuit adapted to sense voltages on the first and second capacitor; and a second sense inverter having input from the second capacitor and powered by the feedback circuit. The R-S flipflop has a first input coupled to an output of the first sense inverter and a second input coupled to an output of the second sense inverter.