An oscillator includes a reference current generating circuit, a modulator circuit, and an oscillating circuit. The reference current generating circuit generates a first reference current. The modulator circuit generates a modulation current according to the first reference current and a feedback voltage, wherein the modulation current is negatively correlated with the feedback voltage. The oscillating circuit receives at least the modulation current, and generates an oscillating signal with an oscillating frequency according to at least the modulation current, wherein the oscillating frequency is varied according to the modulation current. The oscillator may be employed by a direct current (DC)-to-DC voltage converter.

An oscillator includes a reference current generating circuit, a modulator circuit, and an oscillating circuit. The reference current generating circuit generates a first reference current. The modulator circuit generates a modulation current according to the first reference current and a feedback voltage, wherein the modulation current is negatively correlated with the feedback voltage. The oscillating circuit receives at least the modulation current, and generates an oscillating signal with an oscillating frequency according to at least the modulation current, wherein the oscillating frequency is varied according to the modulation current. The oscillator may be employed by a direct current (DC)-to-DC voltage converter.

A circuit includes a first digital controlled oscillator and a second digital controlled oscillator coupled to the first digital controlled oscillator. A skew detector is connected to determine a skew between outputs of the first digital controlled oscillator and the second digital controlled oscillator, and a decoder is utilized to output a control signal, based on the skew, to modify a frequency of the first digital controlled oscillator using a switched capacitor array to reduce or eliminate the skew. A differential pulse injection oscillator circuit and a pulse injection signal generator circuit are also provided.

A circuit includes a first digital controlled oscillator and a second digital controlled oscillator coupled to the first digital controlled oscillator. A skew detector is connected to determine a skew between outputs of the first digital controlled oscillator and the second digital controlled oscillator, and a decoder is utilized to output a control signal, based on the skew, to modify a frequency of the first digital controlled oscillator using a switched capacitor array to reduce or eliminate the skew. A differential pulse injection oscillator circuit and a pulse injection signal generator circuit are also provided.

A circuit includes a first digital controlled oscillator and a second digital controlled oscillator coupled to the first digital controlled oscillator. A skew detector is connected to determine a skew between outputs of the first digital controlled oscillator and the second digital controlled oscillator, and a decoder is utilized to output a control signal, based on the skew, to modify a frequency of the first digital controlled oscillator using a switched capacitor array to reduce or eliminate the skew. A differential pulse injection oscillator circuit and a pulse injection signal generator circuit are also provided,

Provided is a semiconductor integrated circuit including an oscillation circuit configured to output an oscillation signal, a heater configured to heat the oscillation circuit, a temperature sensor configured to detect a temperature of the oscillation circuit, and a nonvolatile memory configured to store temperature correction data. The oscillation circuit controls a frequency of the oscillation signal based on an output signal of the temperature sensor and the temperature correction data.

Provided is a semiconductor integrated circuit including an oscillation circuit configured to output an oscillation signal, a heater configured to heat the oscillation circuit, a temperature sensor configured to detect a temperature of the oscillation circuit, and a nonvolatile memory configured to store temperature correction data. The oscillation circuit controls a frequency of the oscillation signal based on an output signal of the temperature sensor and the temperature correction data.

A level shifter is provided. The level shifter is located between a high-side circuit area and a low-side circuit area and includes a substrate, a buried island, and an isolation structure. The buried island has a first conductivity type and is located in the substrate. The isolation structure has a second conductivity type, is located in the substrate and surrounds the buried island. In addition, a dimension of the isolation structure near the high-side circuit area is different from a dimension of the isolation structure near the low-side circuit area. A semiconductor device including the level shifter is also provided.

A level shifter is provided. The level shifter is located between a high-side circuit area and a low-side circuit area and includes a substrate, a buried island, and an isolation structure. The buried island has a first conductivity type and is located in the substrate. The isolation structure has a second conductivity type, is located in the substrate and surrounds the buried island. In addition, a dimension of the isolation structure near the high-side circuit area is different from a dimension of the isolation structure near the low-side circuit area. A semiconductor device including the level shifter is also provided.

An integrated oscillator has an R-S flipflop; a first and second capacitor; a current source transistor; first and second current-steering transistors, each having a source coupled to the current source transistor, with drains coupled to the first and second capacitor respectively. The first current-steering transistor has gate coupled to a first output of the R-S flipflop, and the second current-steering transistor has gate coupled to a second output of the R-S flipflop. The oscillator has a first sense inverter having input from the first capacitor and powered by a feedback circuit adapted to sense voltages on the first and second capacitor; and a second sense inverter having input from the second capacitor and powered by the feedback circuit. The R-S flipflop has a first input coupled to an output of the first sense inverter and a second input coupled to an output of the second sense inverter.