A wiring of a semiconductor switch having a gate, a collector or a drain, and an emitter or a source, includes a first arrangement having a first capacitor connected in series with a parallel connection having a first resistor and a first diode. The first arrangement is connected between the gate and the collector or drain, wherein the first diode is connected away from the gate in a flow direction. A second arrangement is connected in parallel with the first arrangement and includes a second capacitor connected in series with a parallel connection having a second resistor and a second diode, wherein the second diode lies toward the gate in the flow direction.

A switch for a radio frequency signal switch assembly including a first node coupled to one of an input and an output of the switch assembly and a second node coupled to a reference voltage, a control node, a common resistor coupled to the control node, a plurality of transistors coupled between the first and second nodes, each transistor of the plurality of transistors having a gate, a drain, and a source, and a plurality of gate resistors coupled between the common resistor and the gates of the plurality of transistors, the plurality of gate resistors having a scaled arrangement of values selected based on a voltage differential across each of the plurality of gate resistors to improve switching speed.

A gate-drive controller for a power semiconductor device includes a master control unit (MCU) and one or more comparators that compare the output signal of the power semiconductor device to a reference value generated by the MCU. The MCU, in response to a turn-off trigger signal, generates a first intermediate drive signal for the power semiconductor device and generates a second intermediate drive signal, different from the first drive signal, when a DSAT signal indicates that the power semiconductor device is experiencing de-saturation. The MCU generates a final drive signal for the power semiconductor when the output signal of the one or more comparators indicates that the output signal of the power semiconductor device has changed relative to the reference value. The controller may also include a timer that causes the drive signals to change in predetermined intervals when the one or more comparators do not indicate a change.

A method for operating an IGBT includes determining a maximum stationary reverse bias required for operation of the IGBT, determining a first removal charge, the removal of which at the gate of the IGBT causes an electric field strength that enables the IGBT to accept the maximum stationary reverse bias during stationary blocking, determining a second removal charge, the removal of which at the gate causes an electric field strength that leads to a dynamic avalanche, and, when the IGBT is switched off, removing from the gate during a charge removal duration a removal charge that is greater than the first removal charge and smaller than the second removal charge.

Support circuitry for a power transistor includes a feedback switching element and switching control circuitry. The feedback switching element is coupled between a Kelvin connection node and a second power switching node. The switching control circuitry is configured to cause the feedback switching element to couple the Kelvin connection node to the second power switching node after the power transistor is switched from a blocking mode of operation to a conduction mode of operation and cause the feedback switching element to isolate the Kelvin connection node from the second power switching node before the power transistor is switched from the conduction mode of operation to the blocking mode of operation.

Embodiments of the invention provide IGBT circuit modules with increased efficiencies. These efficiencies can be realized in a number of ways. In some embodiments, the gate resistance and/or voltage can be minimized. In some embodiments, the IGBT circuit module can be switched using an isolated receiver such as a fiber optic receiver. In some embodiments, a single driver can drive a single IGBT. And in some embodiments, a current bypass circuit can be included. Various other embodiments of the invention are disclosed.

A gate-drive controller for a power semiconductor device includes a master control unit (MCU) and one or more comparators that compare the output signal of the power semiconductor device to a reference value generated by the MCU. The MCU, in response to a turn-off trigger signal, generates a first intermediate drive signal for the power semiconductor device and generates a second intermediate drive signal, different from the first drive signal, when a DSAT signal indicates that the power semiconductor device is experiencing de-saturation. The MCU generates a final drive signal for the power semiconductor when the output signal of the one or more comparators indicates that the output signal of the power semiconductor device has changed relative to the reference value. The controller may also include a timer that causes the drive signals to change in predetermined intervals when the one or more comparators do not indicate a change.

A method is provided for driving a half bridge circuit that includes a first transistor and a second transistor. The method includes generating an off-current during a plurality of turn-off switching events to control a gate voltage of the second transistor; measuring a transistor parameter of the second transistor during a first turn-off switching event during which the second transistor is transitioned to an off state, wherein the transistor parameter is indicative of an oscillation at the first transistor during a corresponding turn-on switching event during which the first transistor is transitioned to an on state; and activating a portion of the off-current for the second turn-off switching event, including regulating an interval length of the second portion for the second turn-off switching event based on the measured transistor parameter measured during the first turn-off switching event.

A switch for a radio frequency signal switch assembly including a first node coupled to one of an input and an output of the switch assembly and a second node coupled to a reference voltage, a control node, a common resistor coupled to the control node, a plurality of transistors coupled between the first and second nodes, each transistor of the plurality of transistors having a gate, a drain, and a source, and a plurality of gate resistors coupled between the common resistor and the gates of the plurality of transistors, the plurality of gate resistors having a scaled arrangement of values selected based on a voltage differential across each of the plurality of gate resistors to improve switching speed.

A power converting apparatus and a vehicle including the same according to an embodiment of the present disclosure includes a switching element; and a gate drive unit configured to apply a gate driving signal for driving the switching element to a gate terminal of the switching element, wherein the gate drive unit includes: a current source unit including a source current for sourcing current to the gate terminal in a turn-on section of the switching element, and a sink current for sinking current from the gate terminal in a turn-off section of the switching element; a control current for sinking the current from the gate terminal during a partial section of the turn-on section and the turn-off section of the switching element; and a control current controller configured to control an operation of the control current.