A semiconductor assembly includes a first FET integrated within the semiconductor assembly and comprising gate, source and drain terminals. The semiconductor assembly further includes a low voltage switching device integrated within the semiconductor assembly and being configured to electrically short a gate-source capacitance of the first FET responsive to a control signal.

The present invention provides a driving device and a control method. The driving device is configured to drive a power switch and includes a power supply, a first bridge arm coupled to the power supply, a second bridge arm coupled in parallel to the first bridge arm, and a resonant inductor. The first bridge arm includes a first switch and a second switch connected to a first midpoint, the second bridge arm comprises a first semiconductor element and a second semiconductor element connected to a second midpoint, and the resonant inductor is coupled between the first midpoint and the second midpoint. The control method includes turning on the first switch for a first period such that the power supply charges a gate electrode of the power switch; and in response to a decrease of a current of the resonant inductor to a first threshold value, turning on the first switch again for a second period such that a potential of the first midpoint is equal to a potential of the second midpoint.

A high throw-count multiple-pole FET-based RF switch architecture that provides good RF performance in terms of insertion loss, return loss, isolation, linearity, and power handling. A common port RFC is coupled along a common path to multiple ports RFn. Embodiments introduce additional common RF path branch isolation switches which are controlled by state dependent logic. The branch isolation switches help to isolate the unused branch ports RFn and the unused portion of the common path from the active portion of the common path, and thereby reduce the reactive load attributable to such branches that degrades RF performance of the ports RFn “closer” to the common port RFC. The branch isolation switches can also be used to reconfigure the switch architecture for a multiplex function as well as separate switch path banks for re-configurability of purpose, tuning, or varying switch throw counts and packaging options.

A switch circuit is provided. The switch circuit includes a P-type transistor switch and a first P-type control transistor. The P-type transistor switch includes a first control end, a first output end, and a first input end. The first input end receives a first input signal whose logic level is one. The first P-type control transistor is coupled to the first input end and the first control end. The first P-type control transistor includes a second control end. The second control end receives a second input signal whose logic level is zero to turn on the first P-type control transistor. When the first P-type control transistor is turned on, the first input signal is transmitted to the first control end of the P-type transistor switch to turn off the P-type transistor switch.

An apparatus includes an impedance circuit and a plurality of inductors coupled to the impedance circuit. Each of the plurality of inductors is coupled in parallel to a corresponding switch of a plurality of switches.

Provided is a switch having a structure having an excellent isolation characteristic even without a limiter in an ultrahigh frequency hand used for a military component. A switch according to an embodiment of the present invention comprises: multiple transistors which are connected in parallel to a path from an input terminal toward an output terminal and perform switching; and a first transmission line provided between the input terminal and a node on a path to which a first transistor is connected. By the present invention, switching can be performed in an ultrahigh frequency such as W-band while a GaN transistor is used, an insertion loss is low, an isolation characteristic is excellent, and eventually efficiency of an ultrahigh frequency circuit can be further enhanced.

A radio frequency switch device includes a first transistor and a second transistor; a compensation network coupled between a body terminal of the first transistor and a source/drain terminal of the second transistor; and a bootstrapping network having a first terminal coupled to a first bias terminal, a second terminal coupled to a gate terminal of the first transistor, and a third terminal coupled to the body terminal of the first transistor, wherein the bootstrapping network establishes a low impedance path between the gate terminal and the body terminal of the first transistor in response to a first voltage value of the first bias terminal, and wherein the bootstrapping network establishes a high impedance path between the gate terminal and the body terminal of the first transistor in response to a second voltage value of the first bias terminal.

The present disclosure presents a circuit, a method, and a system to drive a half-bridge switch using depletion (D) mode compound semiconductor (III-V) switching transistors for a DC-DC converter using at least one driver to drive the switches of the circuit. Also included is at least one charge pump electrically connected to a gate of the transistor, to maintain a voltage that holds the transistor in an off-state. The circuit includes AC coupling capacitors to level shift a voltage and realize fast transistor switching.

An output driver (1) comprises a driver transistor (MP0) having a gate node (GMP0) to apply a gate control voltage (GCV) and a gate control circuit (30) to control the gate node (GMP0) of the driver transistor (MP0). The output driver (1) is configured to be operable in a first operation mode and a second operation mode, the variable resistance of the current path of the driver transistor (MP0) being lower in the first operation mode than in the second operation mode. The gate control circuit (30) comprises a controllable resistor (RC), the controllable resistor (RC) being disposed between the gate node (GMP0) of the driver transistor (MP0) and an output node (QP) of the output driver (1), and a resistance of the controllable resistor (RC) being dependent on operating the output driver in the first or second operation mode.

A switching system can include a main switching device configured to switch a voltage, a gate driver having an output coupled to a drive terminal of the main switching device and configured to deliver a drive signal to the main switching device, and a clamp circuit. The clamp circuit can be coupled to the drive terminal of the main switching device. The clamp circuit can include a logic gate configured to drive a clamp switching device coupled to and configured to clamp a voltage at the drive terminal of the main switching device. A drive signal of the clamp switching device can be substantially complementary to the main switching device drive signal. The logic gate can provide at least a portion of a delay between switching transitions of the main switching device and switching transitions of the clamp switching device.