H03K2017/0806

SEMICONDUCTOR DEVICE
20220352145 · 2022-11-03 ·

For example, a semiconductor device includes an output electrode to be connected to an inductive load, a ground electrode to be connected to a ground terminal, first and second transistors connected in parallel between the output and ground electrodes, an active clamp circuit connected to the gate of the first transistor, and a gate control circuit to control the gates of the first and second transistors to keep the first and second transistors on in a first operation state and off in a second operation state. After a transition from the first operation state to the second, before the active clamp circuit operates, the gate control circuit short-circuits between the gate and source of the second transistor.

DRIVE DEVICE FOR VOLTAGE-CONTROLLED SEMICONDUCTOR ELEMENT
20230088396 · 2023-03-23 · ·

A drive device for driving a voltage-controlled semiconductor element. The drive device includes: a drive circuit connected to the gate of the semiconductor element via a gate resistor; a delay circuit connected to the drive circuit, for delaying a drive signal output from the drive circuit until a gate voltage of the semiconductor element enters a Miller effect period, which is a period during which the gate voltage transitionally changes, the gate voltage having temperature dependency on a chip temperature of the semiconductor element; a one-shot circuit connected to the delay circuit, for outputting a pulse signal with a pulse width shorter than the Miller effect period; a comparator that compares the gate voltage with a reference voltage; and an AND circuit that outputs an overheat detection signal in response to the gate voltage exceeding the reference voltage.

TEMPERATURE COMPENSATION OF ANALOG CMOS PHYSICALLY UNCLONABLE FUNCTION FOR YIELD ENHANCEMENT
20230090064 · 2023-03-23 ·

An apparatus includes a current-based temperature compensation circuit having a reference buffer, a biasing current mirror, and a controller. The reference buffer is configured to receive a biasing reference voltage at a voltage input terminal and replicate the biasing reference voltage to first and second buffer terminals. At least one of the first and second buffer terminals is configured to be electrically connected to at least one gate terminal of an analog complementary metal oxide semiconductor (CMOS) physically unclonable function (PUF) cell. The biasing current mirror is configured to receive a reference current at a current input terminal and replicate the reference current to the first buffer terminal. The controller is configured to compensate an output of the CMOS PUF cell for temperature variation based on a weighted sum of a bandgap current, a current proportional to absolute temperature, and a current complementary to absolute temperature.

GATE DRIVER OUTPUT PROTECTION CIRCUIT

A method for protecting a system including a driver integrated circuit includes receiving a driver input signal. The method includes driving an output signal externally to the driver integrated circuit. The output signal is driven based on the driver input signal and an indication of a delay between receipt of an edge of the driver input signal and arrival of a corresponding edge of the output signal at an output node coupled to a terminal of the driver integrated circuit.

Semiconductor chip

The present disclosure provides a semiconductor chip including a functional area, a first end, a second end, a third end, and a connecting portion. The functional area has first and second sides opposite to each other. The first end is disposed on the first side and the third end is disposed on the first side, wherein the semiconductor chip is switched on or off according to the drive signal received between the third end and the first end, and the connecting portion is disposed on the first side of the functional area and connected to the first end and the third end, wherein when the temperature rises above the a first temperature, the connecting portion is in a conductive state, and when the temperature drops to be not higher than a third temperature, the connecting portion is in an insulated state.

GATE DRIVER WITH THERMAL MONITORING AND CURRENT SENSING

A driver can be configured to provide sensed phase currents as feedback to a controller to indicate the output currents from each phase of a switch mode power supply (SMPS). The driver can be configured to temperature compensate the sensed currents in one of two ways. If a temperature sensor is directly coupled to the driver, then the driver may be configured to temperature compensate the sensed currents from each phase based on a temperature measurement made by the temperature sensor. If a temperature sensor is not directly coupled to the driver, then the driver may be configured to temperature compensate the sensed current from each phase based on a temperature signal received from a bus coupled to the driver. The bus can communicate the temperature signal so that multiple drivers can utilize one temperature sensor.

Composite switching device with switching device and diode in parallel

The present disclosure discloses a composite switching circuit, including a plurality of first semiconductor devices connected in series; and at least one second semiconductor device each connected in parallel to one of the plurality of first semiconductor devices. The composite switching circuit is connected to an input source. The second semiconductor device is turned off during a preset period to transfer a current flowing through the second semiconductor device to the first semiconductor devices connected in parallel to the second semiconductor device.

Semiconductor switch circuit

In accordance with an embodiment, a circuit includes: a supply pin and an output pin for connecting a load, and a configuration pin; a semiconductor switch connected between the supply pin and the output pin and configured to establish or to block a current path between the supply pin and the output pin depending on a control signal; and a control circuit configured to generate the control signal for the semiconductor switch taking account of a first parameter, and set the first parameter depending on a component parameter of an external component connected to the configuration pin. The first parameter is set to a first standard value when the component parameter is less than a first threshold value, and the first parameter is set to a second standard value when the component parameter is greater than a second threshold value.

Isolated voltage detection with current limiters
11602022 · 2023-03-07 · ·

A circuit comprises an optical coupling including an illuminator optically coupled to an optical sensor to output a voltage from the optical sensor based on intensity of illumination from the illuminator. The circuit includes a voltage input node with a resistance connected in series between the voltage input and a Zener diode. A method includes powering an illuminator with current from a first voltage input node. The method includes sensing illumination level in illumination from the illuminator with a sensor and outputting output proportionate to illumination sensed by the sensor indicative of voltage detected at the voltage input node. The method can include limiting current between the voltage input node and the illuminator.

SEMICONDUCTOR DRIVE DEVICE, SEMICONDUCTOR DEVICE, AND POWER CONVERSION DEVICE

A semiconductor drive device includes a drive circuit that drives a semiconductor switching element, a passive element connected to a gate of the semiconductor switching element to prevent a gate current of the semiconductor switching element, a switching element connected in series to the passive element, a control circuit that controls the switching element, and a temperature detection circuit that detects a temperature of the semiconductor switching element. The control circuit controls the switching element such that when the temperature detected by the temperature detection circuit is high, the gate current is prevented more than when the temperature is low.