In one example, an apparatus comprises: a voltage sensing circuit having a voltage sensing terminal and a voltage sensing output, the voltage sensing circuit configured to generate a first voltage at the voltage sensing output representing a second voltage at the voltage sensing terminal; a control circuit having a control circuit input and a control circuit output, the control circuit input coupled to the voltage sensing output, the control circuit configured to: determine a state of a transistor based on the first voltage; and generate a driver signal at the control circuit output based on the state; and a driver circuit having a driver input and a switch control output, the driver input coupled to the control circuit output, the driver circuit configured to provide a current at the switch control output responsive to the driver signal.

According to one embodiment, a multichannel switch integrated circuit (IC) includes a multichannel switch circuit and a common test terminal. The multichannel switch circuit includes a plurality of switch circuitries. Each of the switch circuitries includes: an output transistor that outputs an output signal through an output terminal; an overcurrent detection circuit that detects a detection current according to a current flowing through the output transistor; and a diode having an anode that receives the detection current. The common test terminal is connected to each channel switch circuitry, connected to the overcurrent detection circuit through the diode, and connected to a cathode of the diode.

An overcurrent detection circuit including a detection unit for detecting whether a current flowing between main terminals of a main switching device used by a power conversion device is an overcurrent, and a switching unit for switching among thresholds used for determining the overcurrent in the detection unit according to in which phase of the power conversion device the main switching device is used, in which the detection unit includes a plurality of comparison units for comparing a parameter according to the current flowing between main terminals, and thresholds different from each other, and the switching unit is for switching a comparison unit to use for detection of the overcurrent among the plurality of comparison units.

A reverse current suppression circuit for a PMOS transistor, which includes: a gate drive unit, when the source potential of the first PMOS transistor is lower than the drain potential, the gate drive unit making the gate potential of the first PMOS transistor equal to the drain potential, so that the first PMOS transistor comes into a reverse current suppression state; and a substrate switching unit, when the source potential of the first PMOS transistor is lower than the drain potential, the substrate switching unit short-circuiting the substrate of the first PMOS transistor with the drain of the first PMOS transistor. According to the present invention, when the source potential of the PMOS transistor is lower than the drain potential, the PMOS transistor can be controlled to operate in the reverse current suppression state, so that the PMOS transistor can be effectively protected.

Achieved is a load drive device capable of suppressing local concentration of temperature at the time of absorbing a counter electromotive force of an inductive load while suppressing a size of a power transistor. The load drive device includes a first transistor connected between a first control electrode and an inductive load. Further, the load drive device includes an active clamp circuit that becomes conductive when a terminal voltage of a second control electrode between the first transistor and the inductive load exceeds a threshold. Furthermore, the load drive device includes a second transistor connected to the second control electrode and connected in parallel to the first transistor.

A power stage includes a control device and a power transistor, the control device comprising a primary circuit comprising: a control module able to generate a control current, a primary circuit malfunction detector able to detect a malfunction, a pulse transformer comprising a primary winding connected to the primary circuit, comprising a secondary winding connected to the secondary circuit, magnetically coupled to the primary winding and able to generate, from the control current, an induced pulse current making it possible to drive the power transistor, a secondary circuit comprising: a power and fault detection controller able to detect a malfunction of the secondary circuit or of the power transistor, the power and fault detection controller being able to communicate the malfunction of the secondary circuit or of the power transistor to the primary circuit malfunction detector.

A power stage includes a control device and a power transistor, the control device comprising a primary circuit comprising: a control module able to generate a control current, a primary circuit malfunction detector able to detect a malfunction, a pulse transformer comprising a primary winding connected to the primary circuit, comprising a secondary winding connected to the secondary circuit, magnetically coupled to the primary winding and able to generate, from the control current, an induced pulse current making it possible to drive the power transistor, a secondary circuit comprising: a power and fault detection controller able to detect a malfunction of the secondary circuit or of the power transistor, the power and fault detection controller being able to communicate the malfunction of the secondary circuit or of the power transistor to the primary circuit malfunction detector.

The present invention provides a power supply circuit with an adjustable channel switch impedance and an electronic device. The power supply circuit includes N main channel MOS transistors, a control module, an execution module and a detection module, wherein the execution module includes a first MOS transistor; the detection module includes a detection resistor and a second MOS transistor; a gate-source voltage of the main channel MOS transistors and a gate-source voltage of the first MOS transistor are configured to be consistent, and a source-drain voltage of the main channel MOS transistors and a source-drain voltage of the second MOS transistor are consistent; the control module is connected to the detection resistor and configured to: detect voltage drop information on voltage drop at two ends of the detection resistor, wherein the voltage drop information can represent a current of a load.

A semiconductor assembly includes a semiconductor switching device, a conductive load base structure, and a current sense unit. The semiconductor switching device includes a drain structure and one or more array units, wherein each array unit includes a load pad and a plurality of transistor cells electrically connected in parallel between the load pad of the array unit and the drain structure. The current sense unit is electrically connected between a first one of the load pads and the load base structure.

A controller comprising a driver interface referenced to a first reference potential, a drive circuit referenced to a second reference potential, and an inductive coupling. The driver interface comprises a first receiver configured to compare a portion of signals having a first polarity on the first terminal of the inductive coupling with a first threshold, and a second receiver configured to compare a portion of signals having a second polarity on the second terminal of the inductive coupling with a third threshold. The drive circuit comprises a first transmitter configured to drive current in a first direction in the second winding to transmit first signals, and a second transmitter configured to drive current in a second direction in the second winding to transmit second signals, the second direction opposite the first direction.