An overcurrent detector with an electric line and a sensor for monitoring an electric current in the line and outputting a measurement signal, and an integral-unit adapted to integrate an interval of consecutive values of the measurement signal and outputting an integrator-signal, the detector comprises a comparator unit for comparing a value of the integrator-signal with a threshold level and outputting a trigger signal, with the detector further comprises a threshold level determination unit, an input being connected to the sensor for receiving an actual measurement signal, and with an output being connected to the comparator unit, proving the comparator unit with the threshold level, and that the threshold level determination unit is adapted to determine the threshold level in dependence on the value of the actual measurement signal.

An overcurrent detector with an electric line and a sensor for monitoring an electric current in the line and outputting a measurement signal, and an integral-unit adapted to integrate an interval of consecutive values of the measurement signal and outputting an integrator-signal, the detector comprises a comparator unit for comparing a value of the integrator-signal with a threshold level and outputting a trigger signal, with the detector further comprises a threshold level determination unit, an input being connected to the sensor for receiving an actual measurement signal, and with an output being connected to the comparator unit, proving the comparator unit with the threshold level, and that the threshold level determination unit is adapted to determine the threshold level in dependence on the value of the actual measurement signal.

An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.

The present invention relates to a circuit for protecting a switch of an electrical system, said protecting circuit comprising a variable electronic component having a physical characteristic the value of which varies by at least 10% as a function of temperature, the protecting circuit being configured to prohibit a current from passing through said switch when the intensity of said current exceeds a maximum allowed intensity threshold, said variable electronic component being connected in the protecting circuit such that the value of the maximum allowed intensity threshold is directly a function of said physical characteristic.

In an embodiment, a voltage comparator includes: a first switch having a conduction terminal coupled to an internal node that is coupled to an output of the voltage comparator; a current source; a capacitor; and a second switch connected in parallel with the capacitor, wherein the current source, the capacitor, and the first switch are coupled in series.

An integrated circuit may include a power transistor coupled between a supply pin and an output pin; a current sensing circuit configured to sense a load current passing through the power transistor and to provide a respective current sense signal; a first configuration pin; a current output circuit configured to provide a diagnosis current at a current output pin; a diagnosis pin for receiving a diagnosis request signal; and a control circuit configured to: select a characteristic curve representing a current versus time characteristic dependent on a external circuit connected to the first configuration pin; generate a drive signal for the power transistor dependent on the selected characteristic curve and the current sense signal; and control—dependent on a pulse pattern of the diagnosis request signal—the current output circuit to set the value of the diagnosis current such that it represents the load current or the selected characteristic curve.

Provided is a semiconductor device, including: a first electrode layer including a first wiring member and a second electrode layer including a second wiring member, the first electrode layer and the second electrode layer being disposed to face each other; a semiconductor element disposed in a gap between the first and second electrode layers, and electrically connected to the first and second electrode layers; and a via disposed in the gap between the first and second electrode layers, electrically connected to the first and second electrode layers, and configured to detect a state of the semiconductor element by being fractured at a predetermined temperature and losing electric connection.

A short circuit detection circuit includes a current terminal, a sense resistor, an amplifier, and a resistor-capacitor ladder. The sense resistor is coupled to the current terminal, and is configured to develop a sense voltage proportional to a current through the current terminal. The amplifier is coupled to the sense resistor, and is configured to generate a scaled current proportional to the sense voltage. The resistor-capacitor ladder is coupled to the amplifier, and is configured to generate a measurement voltage that represents a surface temperature rise due to the current through the current terminal.

Provided is an overcurrent detection circuit for detecting an overcurrent flowing upon turning on of a switching element, the overcurrent detection circuit including a main current detection unit configured to detect whether an input signal according to a main current is higher than or equal to a set detection threshold, and a condition control unit configured to control at least one of a waveform of the input signal in the main current detection unit or the detection threshold to control a comparison condition in the main current detection unit, in which the condition control unit is configured to set the comparison condition to a first condition during a period from the turning on of the switching element until elapse of a first period, and set the comparison condition to a second condition during a period from the elapse of the first period until elapse of a second period.

Provided is an overcurrent detection circuit for detecting an overcurrent flowing upon turning on of a switching element, the overcurrent detection circuit including a main current detection unit configured to detect whether an input signal according to a main current is higher than or equal to a set detection threshold, and a condition control unit configured to control at least one of a waveform of the input signal in the main current detection unit or the detection threshold to control a comparison condition in the main current detection unit, in which the condition control unit is configured to set the comparison condition to a first condition during a period from the turning on of the switching element until elapse of a first period, and set the comparison condition to a second condition during a period from the elapse of the first period until elapse of a second period.