A switching valve includes series-connected switching elements and auxiliary circuits. Each auxiliary circuit is connected in parallel with a respective one of the series-connected switching elements. Each auxiliary circuit includes a respective auxiliary capacitor. The method includes carrying out a compensation procedure. The compensation procedure includes: initiating a turn-off event by sending a respective turn-off control signal to each switching element; measuring a respective capacitor voltage value of each auxiliary capacitor after the turn-off event; comparing the measured capacitor voltage values; and using the comparison between the measured capacitor voltages as a reference to adjust the time of sending a or a respective turn-off control signal to at least one of the switching elements so as to reduce a or a respective time difference between the turn-off times of the switching elements at the next turn-off event.

The invention relates to methods of determining whether or not an individual has or is likely to develop a neurological disease and related methods and kits.

This disclosure relates to a discrete semiconductor device and associated method of manufacture, the discrete semiconductor device includes: a high voltage depletion mode device die; and a low voltage enhancement mode device die connected in cascode configuration with the high voltage depletion mode device die. The high voltage depletion mode device includes a gate, source and drain terminals arranged on a first surface thereof and the gate source and drain terminals are inverted with respect to the low voltage enhancement mode device die and the low voltage device is arranged adjacent to the high voltage device.

A power device driving apparatus drives a plurality of power devices including first and second power devices. In the apparatus, a plurality of drive circuits are separately provided for at least the first power device and the second power device and output drive signals to the respective power devices. The isolated power supply includes a first isolated power supply unit that supplies a first supply voltage, and a second isolated power supply unit that supplies a second supply voltage that is different from the first supply voltage. The plurality of drive circuits includes a first drive circuit that uses the first supply voltage supplied from the first isolated power supply unit to output the drive signal to the first power device, and a second drive circuit that uses the second supply voltage supplied from the second isolated power supply unit to output the drive signal to the second power device.

A control device for controlling a power semiconductor component which includes at least two voltage-controlled power semiconductor devices which are electrically connected in parallel and which have each a control connection is disclosed. The control device includes a driver element which can be used to set electrical voltages at the control connections of the power semiconductor devices. The control device includes a measuring unit configured to capture electrical currents which flow through the power semiconductor devices. The driver element is configured to set a level and/or a temporal profile of the electrical voltages on the basis of the electrical currents.

A power module includes a first terminal, a second terminal, and a number of semiconductor die coupled between the first terminal and the second terminal. The semiconductor die are configured to provide a low-resistance path for current flow from the first terminal to the second terminal during a forward conduction mode of operation and a high-resistance path for current flow from the first terminal to the second terminal during a forward blocking configuration. Due to improvements made to the power module, it is able to pass a temperature, humidity, and bias test at 80% of its rated voltage for at least 1000 hours.

A high voltage switch comprising: a high voltage power supply providing power greater than about 5 kV; a control voltage power source; a plurality of switch modules arranged in series with respect to each other each of the plurality of switch modules configured to switch power from the high voltage power supply, and an output configured to output a pulsed output signal having a voltage greater than the rating of any switch of the plurality of switch modules, a pulse width less than 2 s, and at a pulse frequency greater than 10 kHz.

A DC power switching assembly includes a plurality of series connected power switching units. Each power switching unit has a first terminal of the unit and a second terminal of the unit, the terminals having the same polarity. A power switching sub-unit is electrically coupled between the first terminal and the second terminal of the unit to control current flow between the first terminal and the second terminal. The sub-unit has at least one semiconductor device, a current limiter and a pair of series connected diodes in parallel with the current limiter. The series connected diodes and current limiter are connected to one terminal of the semiconductor device; and a capacitor is connected to the other terminal of the semiconductor device.

The present disclosure discloses a gate voltage control circuit of an IGBT and a control method thereof. The gate voltage control circuit of the IGBT comprises a voltage control circuit, an active clamping circuit and a power amplifier circuit. A control voltage outputted by the voltage control circuit indirectly controls a gate voltage of the IGBT, so as to achieve a better control of the gate voltage of the IGBT with a smaller loss. It may prevent the active clamping circuit from a too-early response and may increase the active clamping circuit response speed; and may avoid the voltage oscillation of the collector-emitter voltage Vce and the gate voltage Vge, and may improve the reliability of the IGBTs connected in series.

A high voltage switch comprising: a high voltage power supply providing power greater than about 5 kV; a control voltage power source; a plurality of switch modules arranged in series with respect to each other each of the plurality of switch modules configured to switch power from the high voltage power supply, and an output configured to output a pulsed output signal having a voltage greater than the rating of any switch of the plurality of switch modules, a pulse width less than 2 s, and at a pulse frequency greater than 10 kHz.