A power supply system includes a plurality of sweep modules that is connected to a main line. Each sweep module includes a switching element that switches between connection and disconnection between a battery module and the main line and is formed of a MOSFET. A failure detecting device of the power supply system includes a temperature detecting unit configured to detect temperatures of the plurality of sweep modules and a failure determining unit configured to determine whether a difference between a temperature of one sweep module selected from the plurality of sweep modules and a reference temperature which is determined based on the temperatures of other sweep modules is greater than a predetermined threshold value.

A semiconductor device includes: a semiconductor base body including: a p-type substrate; and an n-type first semiconductor layer; a first electrode; a second electrode; an isolation film; an insulation film; and a third electrode disposed over the insulation film. The first electrode is electrically connected to a first circuit C1 that is connected to a first power source Vin. The second electrode is electrically connected to a second circuit C2 that is connected to a second power source Vcc. The semiconductor base body further includes a p-type back gate region that is formed in at least a region of the semiconductor base body that faces the third electrode by way of the insulation film with a depth that allows the back gate region to reach the substrate. A dopant concentration of the back gate region falls within a range of 1×10.sup.10 cm.sup.−3 to 1×10.sup.15 cm.sup.−3.

An electrical system may include an electrical unit including a power source, a switch assembly electrically connected to the power source, an activation portion electrically connected to the switch assembly, an electrical latch electrically connected to the pulse generator and/or the switch assembly, and/or a controller electrically connected to the switch assembly and the electrical latch. An embodiment of a method of operating the electrical system may include activating the activation portion; activating, via the activation portion, the switch assembly to electrically connect the controller with the power source; latching the switch assembly in an activated state via the electrical latch; and/or unlatching the switch assembly via the controller to electrically disconnect the controller from the power source.

A MPU controls a changeover switch, which is an FET switch that connects a main battery and a sub-battery having a low rated voltage. The changeover switch is set to an ON state in a case where a potential difference, which is a difference between a voltage of the main battery and a voltage of the sub-battery, is equal to or greater than a positive first predetermined value. A PWM signal is output to a driver to cause the changeover switch to be in a half-ON state in a case where the potential difference is less than the first predetermined value and is greater than a second predetermined value equal to or less than 0. The changeover switch is set to an OFF state in a case where the potential difference is equal to or less than the second predetermined value.

A radio frequency integrated circuit (RFIC) is described. The RFIC includes a field effect transistor (FET). The FET has a ferroelectric gate stack having a source region, a drain region, a body region, and a gate. The RFIC also includes a first resistor coupled between a first bias supply and the body region. The RFIC further includes a second resistor coupled between the gate and a second bias supply.

A switching device includes: a lower switching element, an upper switching element having a source connected to a drain of the lower switching element; a control circuit including a first output part that supplies a driving signal to the lower switching element; a Zener diode having a cathode connected to the first output part; a parallel capacitor connected to the Zener diode in parallel; a resistor connected between an anode of the Zener diode and a gate of the lower switching element; and a gate-side capacitor provided separate from a parasitic capacitance of the lower switching element, having a larger capacitance than the parasitic capacitance of the lower switching element, and connected, outside the lower switching element, between the gate and a source of the lower switching element. The capacitance of the gate-side capacitor is smaller than a capacitance of the parallel capacitor.

The present disclosure concerns a method and a circuit for controlling first and second switches electrically in series, wherein one or a plurality of crossings of a voltage threshold by a voltage across the first switch cause a conductive state of the second switch.

A comparator circuit configured to output an output voltage at a first logic level, upon an input voltage exceeding a first threshold voltage, and output the output voltage at a second logic level, upon the input voltage dropping below a second threshold voltage lower than the first threshold voltage. The comparator circuit includes a converter circuit configured to convert the input voltage of the comparator circuit into a first voltage and a second voltage lower than the first voltage, and a logic circuit configured to output a voltage, as the output voltage of the comparator circuit, that is at the first logic level, upon the first voltage exceeding a third threshold voltage, and at the second logic level, upon the second voltage dropping below a fourth threshold voltage lower than the third threshold voltage.

Embodiments relate to circuit for reversing a threshold voltage shift of a transistor. The circuit includes a current mirror for sensing a transistor current and generating a mirrored current corresponding to the sensed transistor current, a gate biasing module for providing a gate bias to the transistor, and a calibration engine configured to receive the mirrored current from the current mirror and to control the gate biasing module in response to determining whether the mirrored current is outside of a predetermined range indicative of a shift in the threshold voltage of the transistor. The gate biasing module includes a gate biasing circuit configured to operate the transistor in a region where hot carrier injection (HCI) is present, and a gate switch for coupling the gate biasing circuit to a gate terminal of the transistor.

A starting circuit capable of further reducing an influence of a variation in the threshold voltage of a transistor is proposed. The starting circuit includes an N-type first MOS transistor whose threshold voltage is near 0 V, a resistor interposed between a source terminal of the first MOS transistor and a ground, and a control circuit controlling a gate voltage of the first MOS transistor. An amount of first current transmitted to a device to be driven and starting the device is controlled according to the control of the gate voltage.