Within a direct current hybrid circuit breaker (DC HCB), a commutation unit (CU) is provided in a semiconductor switch path in series with a semiconductor switch to facilitate opening the DC HCB. The semiconductor switch path is connected in parallel with a mechanical switch path that includes a mechanical switch. The CU is a controlled voltage source which applies a reverse biased voltage on the semiconductor switch path. The CU causes the current through the mechanical switch to ramp down while the current through the semiconductor switch ramps up to a supply current. The CU maintains the current through the mechanical switch to remain at a zero vale by compensating for the voltage drop across the semiconductor switch and the self-inductance of the semiconductor switch path. The mechanical switch can open without current and against no recovery voltage.

A circuit interrupter includes a solid-state switch and a mode control circuit. The solid-state switch is serially connected between a line input terminal and a load output terminal of the circuit interrupter. The mode control circuit is configured to implement a first control mode and a second control mode to control operation of the circuit interrupter. The first control mode is configured to generate a self-bias turn-on threshold voltage for the solid-state switch during power-up of the circuit interrupter, while maintaining the solid-state switch in a switched-off state until the self-bias turn-on threshold voltage is generated. The second control mode is configured to disrupt the self-bias turn-on threshold voltage and place the solid-state switch into a switched-off state.

A capacitor-insulated semiconductor relay includes an RC oscillation circuit, a waveform regulation circuit, a booster circuit, a charging/discharging circuit, and an output circuit. The RC oscillation circuit generates first and second signals that are inverse in phase to each other. The waveform regulation circuit increases rise and fall times of the first signal, and rise and fall times of the second signal. Output signals from the waveform regulation circuit are respectively inputted to first and second high dielectric strength capacitors and that are provided in the booster circuit and connected in parallel to each other. The booster circuit receives the output signals from the waveform regulation circuit to generate a predetermined voltage. The output circuit is driven based on the predetermined voltage.

A semiconductor device includes: a semiconductor base body including: a p-type substrate; and an n-type first semiconductor layer; a first electrode; a second electrode; an isolation film; an insulation film; and a third electrode disposed over the insulation film. The first electrode is electrically connected to a first circuit C1 that is connected to a first power source Vin. The second electrode is electrically connected to a second circuit C2 that is connected to a second power source Vcc. The semiconductor base body further includes a p-type back gate region that is formed in at least a region of the semiconductor base body that faces the third electrode by way of the insulation film with a depth that allows the back gate region to reach the substrate. A dopant concentration of the back gate region falls within a range of 1×10.sup.10 cm.sup.−3 to 1×10.sup.15 cm.sup.−3.

A system on an integrated circuit (IC) chip includes an input terminal and a return terminal, a heater, a thermopile, and a switch device. The heater is coupled between the input terminal and the return terminal. The thermopile is spaced apart from the heater by a galvanic isolation region. The switch device includes a control input coupled to an output of the thermopile. The switch device is coupled to at least one output terminal of the IC chip.

An alternating current solid-state relay having a short-circuit protection function, comprises an output switch circuit, which is connected to a load loop in series and comprises two power switch transistors, a driver circuit having a short-circuit protection function, and a short-circuit detection circuit, wherein the two power switch transistors are IGBTs or MOS transistors and are in opposing series, and two terminals formed after series connection of the two power switch transistors serve as two output terminals of the alternating current solid-state relay; a power circuit supplies power to the driver circuit, and the driver circuit correspondingly controls on-off of the two power switch transistors according to a control signal accessed to an input terminal of the driver circuit, and detects through the short-circuit detection circuit whether or not a short circuit happens to a load; and if yes, the two power switch transistors are controlled to be turned off.

The present invention comprises a drive control unit configured such that, when a first power supply (Vin1) is abnormal, an OFF signal is simultaneously applied to the gates of first and second semiconductor switches (Q1, Q2) of a first switching element, and at the same time, an SCR switch of a second switching element and an FET bidirectional switch are turned on in order.

The present invention related to a universal semiconductor switch. In one embodiment, the switch includes a switching arrangement having an input power connection configured as input for a solid state switching device, the solid state switching device operationally coupled to a current limiting arrangement and an output circuit; the output circuit including a filter circuit. At least one trigger circuit including a power source and an on-and-off circuit, said trigger circuit operably coupled to the switching arrangement input power source and the solid state switching device. An on-command noise immunity circuit and an off-command noise immunity circuit are operationally coupled to the trigger circuit to suppress the noise from any external source, the switch will trigger only if the detected voltage is beyond the threshold voltage and for a predetermined duration.

Apparatus and methods for providing hot-switching immunity for radio frequency switching circuits are disclosed. A radio frequency switching circuit may include both a mechanical switch and a solid-state switch. The mechanical switch may be configurable to couple an output path of a power amplifier to a subsequent component in its transmission path when in a first mechanical switch state and to decouple the output path of the power amplifier from the subsequent component when in a second mechanical switch state. The solid-state switch may be configurable to operatively decouple the mechanical switch from a radio frequency power source when in a first solid-state switch state but not when in a second solid-state switch state. The solid-state switch may be in the first solid-state switch state during transitions of the mechanical switch between the first and second mechanical switch states.

A switching assembly for transferring trains of pulses, including a first terminal and a second terminal. A first plurality of first relays is connected in parallel, and have first contacts connected to the first assembly terminal, and second contacts. A first capacitor is connected in parallel with the first relays. A second plurality of second relays is connected in parallel, and have third contacts, and fourth contacts connected to the second assembly terminal. A second capacitor is connected in parallel with the second relays. A connection connects the second contacts to the third contacts. The pulses have amplitudes of at least 2 kilovolts. On activation of the first and second relays the first and second contacts connect and the third and fourth contacts connect, so that the first and second assembly terminals connect. On deactivation of the first and second relays the first and second assembly terminals disconnect.