Disclosed is a transmitter which includes a channel driver that includes a pull-up transistor and a pull-down transistor connected between a power node and a ground node and outputs a voltage between the pull-up transistor and the pull-down transistor as a transmit signal, and a pre-driver that controls the pull-up transistor and the pull-down transistor in response to a driving signal and controls the channel driver such that the transmit signal is overshot at a rising edge of the driving signal and the transmit signal is undershot at a falling edge of the driving signal.

Disclosed is a transmitter which includes a channel driver that includes a pull-up transistor and a pull-down transistor connected between a power node and a ground node and outputs a voltage between the pull-up transistor and the pull-down transistor as a transmit signal, and a pre-driver that controls the pull-up transistor and the pull-down transistor in response to a driving signal and controls the channel driver such that the transmit signal is overshot at a rising edge of the driving signal and the transmit signal is undershot at a falling edge of the driving signal.

A semiconductor device with a small circuit scale is provided. The semiconductor device includes a first circuit and a second circuit. The first circuit includes first to n-th (n is an integer of 2 or more) transistors and the second circuit includes (n+1)-th to 2n-th transistors. The first to n-th transistors are connected in parallel to each other and the (n+1)-th to 2n-th transistors are connected in series to each other. First to n-th signals are supplied to the first circuit and the second circuit. The first circuit has a function of outputting a first potential when each of potentials of the first to n-th signals is lower than or equal to a first reference potential, and outputting a second potential when at least one of the potentials of the first to n-th signals is higher than the first reference potential. The second circuit has a function of outputting a third potential when each of the potentials of the first to n-th signals is higher than a second reference potential, and outputting the first potential when at least one of the potentials of the first to n-th signals is lower than or equal to the second reference potential.

A semiconductor device with a small circuit scale is provided. The semiconductor device includes a first circuit and a second circuit. The first circuit includes first to n-th (n is an integer of 2 or more) transistors and the second circuit includes (n+1)-th to 2n-th transistors. The first to n-th transistors are connected in parallel to each other and the (n+1)-th to 2n-th transistors are connected in series to each other. First to n-th signals are supplied to the first circuit and the second circuit. The first circuit has a function of outputting a first potential when each of potentials of the first to n-th signals is lower than or equal to a first reference potential, and outputting a second potential when at least one of the potentials of the first to n-th signals is higher than the first reference potential. The second circuit has a function of outputting a third potential when each of the potentials of the first to n-th signals is higher than a second reference potential, and outputting the first potential when at least one of the potentials of the first to n-th signals is lower than or equal to the second reference potential.

Some embodiments may include a nanosecond pulser comprising a plurality of solid state switches; a transformer having a stray inductance, L.sub.s, a stray capacitance, C.sub.s, and a turn ratio n; and a resistor with a resistance, R, in series between the transformer and the switches. In some embodiments, the resonant circuit produces a Q factor according to $Q=\frac{1}{R}\sqrt{\frac{L_s}{C_s}};$
and the nanosecond pulser produces an output voltage V.sub.out from an input voltage V.sub.in, according to V.sub.out=QnV.sub.in.

Some embodiments may include a nanosecond pulser comprising a plurality of solid state switches; a transformer having a stray inductance, L.sub.s, a stray capacitance, C.sub.s, and a turn ratio n; and a resistor with a resistance, R, in series between the transformer and the switches. In some embodiments, the resonant circuit produces a Q factor according to $Q=\frac{1}{R}\sqrt{\frac{L_s}{C_s}};$
and the nanosecond pulser produces an output voltage V.sub.out from an input voltage V.sub.in, according to V.sub.out=QnV.sub.in.

Disclosed are a gate-on voltage generation circuit, a display panel driving device and a display device. The gate-on voltage generation circuit includes an on/off voltage output terminal, a power management integrated circuit and a voltage switching circuit. The power management integrated circuit includes a detection terminal connected to the on/off voltage output terminal, is configured for detecting a voltage output by the on/off voltage output terminal, and outputting first switch control signal or second switch control signal according to the voltage output from the on/off voltage output terminal. The voltage switching circuit includes a first input terminal for inputting a first voltage value and a second input terminal for inputting a second voltage value larger than the first voltage value. The voltage switching circuit outputs the first voltage value upon receiving the first switch control signal, and outputs the second voltage value upon receiving the second switch control signal.

Disclosed are a gate-on voltage generation circuit, a display panel driving device and a display device. The gate-on voltage generation circuit includes an on/off voltage output terminal, a power management integrated circuit and a voltage switching circuit. The power management integrated circuit includes a detection terminal connected to the on/off voltage output terminal, is configured for detecting a voltage output by the on/off voltage output terminal, and outputting first switch control signal or second switch control signal according to the voltage output from the on/off voltage output terminal. The voltage switching circuit includes a first input terminal for inputting a first voltage value and a second input terminal for inputting a second voltage value larger than the first voltage value. The voltage switching circuit outputs the first voltage value upon receiving the first switch control signal, and outputs the second voltage value upon receiving the second switch control signal.

According to an example, an electronic device includes a component, a supply line providing a supply voltage, a transistor with a control input, a linear first control loop, and a non-linear second control loop. The transistor outputs an output voltage to the component depending on a signal applied to the control input. The linear first control loop includes an ADC to convert an analog output voltage level into a digital measurement signal, a controller to generate a digital control signal for the transistor depending on the digital measurement signal, and a DAC to convert the digital control signal into a first analog control signal. The non-linear second control loop is configured to generate a second analog control signal depending on the analog output voltage level. The second analog control signal is superimposed with the first analog control signal and the combined control signals are fed to the control input of the transistor.

According to an example, an electronic device includes a component, a supply line providing a supply voltage, a transistor with a control input, a linear first control loop, and a non-linear second control loop. The transistor outputs an output voltage to the component depending on a signal applied to the control input. The linear first control loop includes an ADC to convert an analog output voltage level into a digital measurement signal, a controller to generate a digital control signal for the transistor depending on the digital measurement signal, and a DAC to convert the digital control signal into a first analog control signal. The non-linear second control loop is configured to generate a second analog control signal depending on the analog output voltage level. The second analog control signal is superimposed with the first analog control signal and the combined control signals are fed to the control input of the transistor.