In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material, and a switch arrangement. The switch arrangement includes a plurality of switches, and is configured to selectively provide electrical power to the set of the heaters.

A rectangular electrical pulse enters a transmission line structure with single pass transit time equal to the duration of the pulse, open circuit at the extreme end and a switch at its center. After a delay equal to of the rectangular pulse duration the central switch is closed to couple the contents of the transmission line structure into another transmission line of half impedance. The output pulse maintains the initial voltage, but is of half the initial duration, and double the initial power.

A rectangular electrical pulse enters a transmission line structure with single pass transit time equal to the duration of the pulse, open circuit at the extreme end and a switch at its center. After a delay equal to of the rectangular pulse duration the central switch is closed to couple the contents of the transmission line structure into another transmission line of half impedance. The output pulse maintains the initial voltage, but is of half the initial duration, and double the initial power.

A semiconductor device includes a first diffusion region of a first type with embedded therein, a second and a third diffusion region of a second type different from the first type. The second and third diffusion regions are more doped than the first region. The second and third diffusion regions are each connected to a respective contact. A dielectric layer covers at least an edge of the second and third diffusion regions, and the region in between the second and third diffusion regions. A piezoelectric layer is disposed on, over, adjacent to or in contact with the dielectric layer. A first structure is in a first soft ferromagnetic material and is arranged to perform mechanical stress on the piezoelectric layer in response to a magnetic field.

A ferrite module matrix driver circuit comprises a controller, a charging circuit, a plurality of ferrite modules arranged in the form of a matrix, a plurality of first switches driven by the controller, a plurality of second switches driven by the controller, and one or more comparators coupled to the charging circuit and the controller. Each switch in the first plurality of switches connects a respective column of said plurality of ferrite modules to the charging circuit. Each switch in the second plurality of switches connects a respective row of said plurality of ferrite modules to ground. And, after a specific voltage has been reached by the charging circuit, one of the comparators signals to the controller, which in turn selects a specific ferrite module to be polarized by driving one of the plurality of first switches and one of the plurality of second switches.

A ferrite module matrix driver circuit comprises a controller, a charging circuit, a plurality of ferrite modules arranged in the form of a matrix, a plurality of first switches driven by the controller, a plurality of second switches driven by the controller, and one or more comparators coupled to the charging circuit and the controller. Each switch in the first plurality of switches connects a respective column of said plurality of ferrite modules to the charging circuit. Each switch in the second plurality of switches connects a respective row of said plurality of ferrite modules to ground. And, after a specific voltage has been reached by the charging circuit, one of the comparators signals to the controller, which in turn selects a specific ferrite module to be polarized by driving one of the plurality of first switches and one of the plurality of second switches.

A protection switching circuit includes a plurality of ferrite modules arranged in a matrix, wherein the matrix includes a plurality of columns and a plurality of rows. The protection switching circuit further includes a primary control module configured to select a specific ferrite module to be polarized and a redundant control module configured to select a specific ferrite module to be polarized, wherein the redundant control module is used when the primary control module is not used. The protection switching circuit further includes a plurality of first switches, wherein the plurality of first switches couples the plurality of columns of the matrix to a first and second charging circuit. The protection switching circuit further includes a plurality of second switches, wherein the plurality of second switches are organized into pairs, wherein each pair in the plurality of second switches couples a respective row of the matrix to a reference potential.

A protection switching circuit includes a plurality of ferrite modules arranged in a matrix, wherein the matrix includes a plurality of columns and a plurality of rows. The protection switching circuit further includes a primary control module configured to select a specific ferrite module to be polarized and a redundant control module configured to select a specific ferrite module to be polarized, wherein the redundant control module is used when the primary control module is not used. The protection switching circuit further includes a plurality of first switches, wherein the plurality of first switches couples the plurality of columns of the matrix to a first and second charging circuit. The protection switching circuit further includes a plurality of second switches, wherein the plurality of second switches are organized into pairs, wherein each pair in the plurality of second switches couples a respective row of the matrix to a reference potential.

According to one embodiment, in a semiconductor device, a connection block includes multiple unit configurations, in each of which a first line extends along a first direction. A second line is placed above the first line and extends along a second direction which intersects with the first direction. A first variable resistance element has one end electrically connected to the first line and another end electrically connected to the second line. The third line is placed above the second line and extends along the first direction. A second variable resistance element has One end electrically connected to the second line and another end electrically connected to the third line. A fourth line is placed above the third line. The fourth line extends along the second direction. A third variable resistance element has one end electrically connected to the third line and another end electrically connected to the fourth line.

According to one embodiment, in a semiconductor device, a connection block includes multiple unit configurations, in each of which a first line extends along a first direction. A second line is placed above the first line and extends along a second direction which intersects with the first direction. A first variable resistance element has one end electrically connected to the first line and another end electrically connected to the second line. The third line is placed above the second line and extends along the first direction. A second variable resistance element has One end electrically connected to the second line and another end electrically connected to the third line. A fourth line is placed above the third line. The fourth line extends along the second direction. A third variable resistance element has one end electrically connected to the third line and another end electrically connected to the fourth line.