The disclosed technology provides various implementations of a device based on a spin Hall effect (SHE) and spin transfer torque (STT) effect. In one aspect, a device is provided to include a magnetic structure including a ferromagnetic layer having a magnetization direction that can be changed by spin transfer torque; a SHE layer that is electrically conducting and exhibits a spin Hall effect to, in response to an applied charge current, generate a spin-polarized current that is perpendicular to the applied charge current, the SHE layer located adjacent to the ferromagnetic layer to inject the spin-polarized current into the ferromagnetic layer; a first electrical contact in contact with the magnetic structure; a second electrical contact in contact with a first location of the SHE layer; a third electrical contact in contact with a second location of the SHE layer so that the first and second locations are on two opposite sides of the magnetic structure; a magnetic structure circuit coupled between the first electrical contact and one of the second and third electrical contacts to supply a current or a voltage to the magnetic structure; and a charge current circuit coupled between the second and third electrical contacts to supply the charge current into the SHE layer, wherein the device is operable at a low write error rate with pulses of a pulse duration of around 2 ns or shorter to switch a direction of the magnetization direction of the ferromagnetic layer in the magnetic structure.

Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an embodiment, a magnetic switch and a load switch are integrated in a single integrated circuit device. In embodiments, the magnetic switch is configured to sense a dynamic change in magnetic field caused by movement of a magnet in at least one of a linear, three-dimensional, and rotational direction.

Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an embodiment, a magnetic switch and a load switch are integrated in a single integrated circuit device. In embodiments, the magnetic switch is configured to sense a dynamic change in magnetic field caused by movement of a magnet in at least one of a linear, three-dimensional, and rotational direction.

A drive system for a vending or other dispensing machine includes an electronic switch and an electric motor configured to actuate dispensing coils or other dispensing technologies to dispense instances of products. The drive system minimizes the risk of sparking and igniting propane or other volatile refrigerants or other volatile chemicals or materials used in or near the machine. The electronic switch may be a Hall effect switch, and the electric motor may be a brushless DC electric motor. A homing circuit (e.g., Fawn-type or AMS-type) is connected to the drive system to control/monitor actuation of the dispensing mechanism. A wiring harness connects the electronic switch to the electric motor, and may include a connector which can be set to allow the electric motor to operate in a clockwise direction or in a counterclockwise direction.

A drive system for a vending or other dispensing machine includes an electronic switch and an electric motor configured to actuate dispensing coils or other dispensing technologies to dispense instances of products. The drive system minimizes the risk of sparking and igniting propane or other volatile refrigerants or other volatile chemicals or materials used in or near the machine. The electronic switch may be a Hall effect switch, and the electric motor may be a brushless DC electric motor. A homing circuit (e.g., Fawn-type or AMS-type) is connected to the drive system to control/monitor actuation of the dispensing mechanism. A wiring harness connects the electronic switch to the electric motor, and may include a connector which can be set to allow the electric motor to operate in a clockwise direction or in a counterclockwise direction.

A magnetic field effect transconductor device (M-FET) capable of carrying a modulated current when receiving an external magnetic field includes at least a ferromagnetic layer and a non-ferromagnetic layer disposed on the ferromagnetic layer; the non-ferromagnetic layer has a first skin depth of the current and a first thickness smaller than the first skin depth; and the ferromagnetic layer has a second skin depth of the current and a second thickness smaller than the second skin depth. Applying an external DC magnetic field along the longitudinal axis of the device and an AC EM wave propagating in the same direction as the DC field, the M-FET demonstrates frequency dependent current switching device. A method for making the transconductor includes depositing a photoresist over transconductors and patterning the photoresist, or depositing transconductors over a patterned photoresist and performing a lift off process.

A magnetic sensor circuit includes a first type electromagnetic conversion element which supplies antiphase signals corresponding to the intensity of a magnetic field in a first direction, a second type electromagnetic conversion element which supplies antiphase signals corresponding to the intensity of a magnetic field in a second direction, a switch circuit which controls a current supplied from a current source to the first and the second type electromagnetic conversion elements, and a common mode feedback circuit which determines a midpoint voltage between the first and the second type electromagnetic conversion elements. The common mode feedback circuit performs a feedback operation to thereby set an output common voltage of the first type electromagnetic conversion element higher than the preset reference voltage and set an output common voltage of the second type electromagnetic conversion element lower than the preset reference voltage.

Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an embodiment, a magnetic switch and a load switch are integrated in a single integrated circuit device. In embodiments, the magnetic switch is configured to sense a dynamic change in magnetic field caused by movement of a magnet in at least one of a linear, three-dimensional, and rotational direction.

Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an embodiment, a magnetic switch and a load switch are integrated in a single integrated circuit device. In embodiments, the magnetic switch is configured to sense a dynamic change in magnetic field caused by movement of a magnet in at least one of a linear, three-dimensional, and rotational direction.

Methods, systems, and apparatus for eliminating gate voltage oscillation without increasing switching power loss in paralleled power semiconductor switches at high current turn-off. The damping circuit includes a switch for driving voltage and multiple resistors and multiple inductors. The damping circuit includes multiple capacitors connected to the multiple inductors. The damping circuit includes multiple power semiconductor switches that are connected to the multiple inductors at gate terminals. The damping circuit includes multiple gate terminal resistors connected in parallel to the multiple power semiconductor switches at the gate terminals and multiple gate terminal switches connected to the multiple gate terminal resistors.