Methods, systems, and apparatus for eliminating gate voltage oscillation without increasing switching power loss in paralleled power semiconductor switches at high current turn-off. The damping circuit includes a switch for driving voltage and multiple resistors and multiple inductors. The damping circuit includes multiple capacitors connected to the multiple inductors. The damping circuit includes multiple power semiconductor switches that are connected to the multiple inductors at gate terminals. The damping circuit includes multiple gate terminal resistors connected in parallel to the multiple power semiconductor switches at the gate terminals and multiple gate terminal switches connected to the multiple gate terminal resistors.

A magnetoresistive relay, comprising a substrate, a magnetic excitation coil, a magnetoresistive sensor, and switch integrated circuit which are placed on a substrate, which further includes an excitation signal input electrode, an excitation signal output electrode, a switch circuit positive output electrode, a switch circuit negative output electrode, a power input electrode, and a ground electrode. The ends of the magnetic excitation coil are each connected with the excitation signal input electrode and the excitation signal output electrodes. The signal from the magnetoresistive sensor is sent to the switch integrated circuit. The positive switch circuit output electrode and the switch circuit negative electrode are respectively connected with the switch integrated circuit. The power input ends and the ground ends of the switch integrated circuit and the magnetoresistive sensor are respectively connected with the power input electrode and the ground electrode. During operation, the magnetic field from the excitation coil provides an on/off signal, and this signal is used to change the magnetoresistance of the magnetoresistive sensor, the switch integrated circuit receives the signal from the magnetoresistive sensor, and from this the external output switching action is realized. This magnetoresistive relay is easy to operate, and it has low power consumption, small size, and long life span.

An espresso machine that includes a group control head for controlling the brewing and dispensing of espresso drinks. In particular, the group control head includes a novel arrangement of proximity switches, magnets, and centering post that allows for a more efficient workflow in the controlling, automating, and duplicating the brewing of multiple doses of espresso. An associated method for using the group control head is also described.

A system for controlling a magnetic switch in urinals includes a switch control unit and a control signal receiving unit connected to the switch control unit via a magnetic field. The switch control unit is configured to generate and eliminate the magnetic field based on a received pulse signal. The control signal receiving unit outputs an on signal in response to sensing the generation of the magnetic field and outputs an off signal in response to sensing the elimination of the magnetic field.

A system for controlling a magnetic switch in urinals includes a switch control unit and a control signal receiving unit connected to the switch control unit via a magnetic field. The switch control unit is configured to generate and eliminate the magnetic field based on a received pulse signal. The control signal receiving unit outputs an on signal in response to sensing the generation of the magnetic field and outputs an off signal in response to sensing the elimination of the magnetic field.

Methods, systems, and apparatus for eliminating gate voltage oscillation without increasing switching power loss in paralleled power semiconductor switches at high current turn-off. The damping circuit includes a switch for driving voltage and multiple resistors and multiple inductors. The damping circuit includes multiple capacitors connected to the multiple inductors. The damping circuit includes multiple power semiconductor switches that are connected to the multiple inductors at gate terminals. The damping circuit includes multiple gate terminal resistors connected in parallel to the multiple power semiconductor switches at the gate terminals and multiple gate terminal switches connected to the multiple gate terminal resistors.

Methods, systems, and apparatus for eliminating gate voltage oscillation without increasing switching power loss in paralleled power semiconductor switches at high current turn-off. The damping circuit includes a switch for driving voltage and multiple resistors and multiple inductors. The damping circuit includes multiple capacitors connected to the multiple inductors. The damping circuit includes multiple power semiconductor switches that are connected to the multiple inductors at gate terminals. The damping circuit includes multiple gate terminal resistors connected in parallel to the multiple power semiconductor switches at the gate terminals and multiple gate terminal switches connected to the multiple gate terminal resistors.

The disclosed technology provides various implementations of a device based on a spin Hall effect (SHE) and spin transfer torque (STT) effect. In one aspect, a device is provided to include a magnetic structure including a ferromagnetic layer having a magnetization direction that can be changed by spin transfer torque; a SHE layer that is electrically conducting and exhibits a spin Hall effect to, in response to an applied charge current, generate a spin-polarized current that is perpendicular to the applied charge current, the SHE layer located adjacent to the ferromagnetic layer to inject the spin-polarized current into the ferromagnetic layer; a first electrical contact in contact with the magnetic structure; a second electrical contact in contact with a first location of the SHE layer; a third electrical contact in contact with a second location of the SHE layer so that the first and second locations are on two opposite sides of the magnetic structure; a magnetic structure circuit coupled between the first electrical contact and one of the second and third electrical contacts to supply a current or a voltage to the magnetic structure; and a charge current circuit coupled between the second and third electrical contacts to supply the charge current into the SHE layer, wherein the device is operable at a low write error rate with pulses of a pulse duration of around 2 ns or shorter to switch a direction of the magnetization direction of the ferromagnetic layer in the magnetic structure.

The disclosed technology provides various implementations of a device based on a spin Hall effect (SHE) and spin transfer torque (STT) effect. In one aspect, a device is provided to include a magnetic structure including a ferromagnetic layer having a magnetization direction that can be changed by spin transfer torque; a SHE layer that is electrically conducting and exhibits a spin Hall effect to, in response to an applied charge current, generate a spin-polarized current that is perpendicular to the applied charge current, the SHE layer located adjacent to the ferromagnetic layer to inject the spin-polarized current into the ferromagnetic layer; a first electrical contact in contact with the magnetic structure; a second electrical contact in contact with a first location of the SHE layer; a third electrical contact in contact with a second location of the SHE layer so that the first and second locations are on two opposite sides of the magnetic structure; a magnetic structure circuit coupled between the first electrical contact and one of the second and third electrical contacts to supply a current or a voltage to the magnetic structure; and a charge current circuit coupled between the second and third electrical contacts to supply the charge current into the SHE layer, wherein the device is operable at a low write error rate with pulses of a pulse duration of around 2 ns or shorter to switch a direction of the magnetization direction of the ferromagnetic layer in the magnetic structure.

Embodiments relate to integrated magnetic field sensor-controlled switch devices, such as transistors, current sources, and power switches, among others. In an embodiment, a magnetic switch and a load switch are integrated in a single integrated circuit device. In embodiments, the device can also include integrated load protection and load diagnostics. Embodiments can provide load switching and optional simultaneous logic signaling, for example to update a microcontroller or electronic control unit (ECU), while reducing space and complexity and thereby cost.