The interface circuit includes a first transistor, a second transistor, a first switch, a first logic circuit and a second logic circuit. The first transistor is controlled by a enable signal. The second transistor is controlled by a first control signal. The first switch is coupled between a second end of the first transistor and the output end of the interface circuit, wherein the first switch is controlled by a second control signal. The first logic circuit generates the first control signal according to the enable signal and at least one indication signal. The second logic circuit generates the second control signal according to the first control signal and the enable signal.

Disclosed is technology that is driven using a positive feedback loop of a feedback field-effect transistor and is capable of performing a logic-in memory function. The logic-in-memory inverter includes a metal oxide semiconductor field-effect transistor, and a feedback field-effect transistor in which a drain region of a nanostructure is connected in series to a drain region of the metal oxide semiconductor field-effect transistor, wherein the logic-in-memory inverter performs a logical operation is performed based on an output voltage V.sub.OUT that changes depending on a level of an input voltage V.sub.IN that is input to a gate electrode of the feedback field-effect transistor and a gate electrode of the metal oxide semiconductor field-effect transistor while a source voltage V.sub.SS is input to a source region of the nanostructure and a drain voltage V.sub.DD is input to a source region of the metal oxide semiconductor field-effect transistor.

The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

A range sensor and a method thereof. The range sensor includes a light source configured to project a plurality of sheets of light at an angle within a field of view (FOV); an image sensor, wherein the image sensor is offset from the light source; collection optics; and a controller connected to the light source, the image sensor, and the collection optics, and configured to simultaneously determine a range of a distant object based on direct time-of-flight (TOF) and a range of a near object based on triangulation.

A repeater for open-drain bus communication and a system including the same is provided. The repeater includes at least one repeating unit having an A-side terminal connected to an A-side open-drain bus, and a B-side terminal electrically connected to a B-side open-drain bus. The repeater has a first mode to receive a signal at the A-side and to produce a signal at the B-side. The repeating unit includes a B-side accelerator element connected to the B-side terminal. The repeating unit when in a first mode includes a first control unit to, control the B-side accelerator element to pull up a voltage at the B-side when the voltage at the A-side surpasses a first threshold voltage during a rising edge of the voltage, and to subsequently control the B-side accelerator element to stop pulling up the voltage at the B-side when the voltage at the B-side surpasses a second threshold voltage.

A repeater for open-drain bus communication and a system including the same is provided. The bus repeater includes an A-to-B buffer to receive the signal at the A-side terminal and to produce a first buffered signal, a B-side pull-down control unit to produce a first control signal based on the received first buffered signal, and a B-side pull-down element to pull down the voltage at the B-side terminal based on the first control signal. The B-side pull-down element includes a B-side pull-down transistor that is arranged in between the B-side terminal and a B-side ground reference terminal. The first control signal controls a voltage at the control terminal of the B-side pull-down transistor. The B-side pull-down control unit includes a B-side comparing unit to compare the voltage at the B-side terminal to a first reference voltage, and to generate the first control signal based on a result of the comparison.

An aspect relates to an apparatus including a first and second power rails; a first set of power switch cells coupled to the first and second power rails, the first set of power switch cells being cascaded from an output to an input of a control circuit; and a second set of power switch cells coupled to the first and second power rails, the second set of power switch cells being coupled to one of a pair of cells of the first set, the first output, and the first input of the control circuit. Another aspect relates to a method including propagating a control signal via a first set of cascaded power switch cells to sequentially couple a first power rail to a second power rail; and propagating the control signal via a second set of power switch cells coupled between a pair of cells of the first set.

An integrated circuit includes a flip-flop circuit and a gating circuit. The flip-flop circuit is arranged to receive an input data for generating a master signal during a writing mode according to a first clock signal and a second clock signal, and to output an output data according to the first clock signal and the second clock signal during a storing mode. The gating circuit is arranged for generating the first clock signal and the second clock signal according to the master signal and an input clock signal. When the input clock signal is at a signal level, the first clock signal and the second clock signal are at different logic levels. When the input clock signal is at another signal level, the first clock signal and the second clock signal are at a same logic level determined according to a signal level of the master signal.

The present disclosure includes apparatuses and methods related to performing logical operations using sensing circuitry. An example apparatus comprises an array of memory cells and sensing circuitry comprising a primary latch coupled to a sense line of the array. The sensing circuitry can be configured to perform a first operation phase of a logical operation by sensing a memory cell coupled to the sense line, perform a number of intermediate operation phases of the logical operation by sensing a respective number of different memory cells coupled to the sense line, and accumulate a result of the first operation phase and the number of intermediate operation phases in a secondary latch coupled to the primary latch without performing a sense line address access.

An AND gate comprises: a first input; a second input; an output; and a plurality of field effect transistors, FETs, each having a respective first terminal, a respective second terminal, and a respective gate terminal to which a voltage may be applied to control a conductivity of a respective channel between the respective first terminal and the respective second terminal. The plurality of FETs comprises: a first FET having its first terminal directly connected to the first input, its second terminal directly connected to the output, and its gate terminal directly connected to the second input; a second FET having its first terminal directly connected to the first input, its second terminal directly connected to the output, and its gate terminal directly connected to the output; and a third FET having its first terminal directly connected to the second input, its second terminal directly connected to the output, and its gate terminal directly connected to the output. Also disclosed is a clock divider stage for receiving a first clock signal oscillating at a first frequency and a second clock signal, the second clock signal being an inversion of the first clock signal, and generating a first output clock signal oscillating at half of the first frequency.