A digitally selectable power gate with thermometer-encoded upper bits may provide solutions for problems digital power gate-based regulators. These solutions may include the use of a fully binary power gate, either in structure or by local decoding of binary control signal to an addressable row-based power gate. This provides improved performance over a row-based code rotation, which is intended to avoid instantaneous overheating of power gate devices but may not mitigate aging effects. Another solution includes ganging a primary DLVR and one or more secondaries. The primary DLVR may include a voltage sense and active controller, which may forward its PG code to secondary instances. Therm and current sensor rotation may be performed locally at the secondaries and a current monitor data may be rolled up from all ganged DLVRs.

A semiconductor apparatus includes an internal circuit connected to a first power line to which a first power voltage is applied; a transistor including a first terminal, which is connected to a node to which an input voltage is applied, a second terminal connected to the internal circuit, and a control terminal to which a control voltage is applied; and a voltage control circuit, which is connected to the node, generating the control voltage. Further, the voltage control circuit includes a step-down circuit generating an internal voltage by lowering the input voltage applied to the node, and a switching circuit, which is connected to the first power line, generating the control voltage based on the first power voltage and the internal voltage.

A protection circuit includes a first PMOS and a first PDMOS receiving input of voltage of a voltage dividing point of voltage input from an external power supply terminal, and a second PMOS and a second PDMOS receiving input of drain output voltage of the first PDMOS. The first PMOS is connected on the external power supply terminal side of the first PDMOS, and the second PMOS is connected on the external power supply terminal side of the second PDMOS. During overvoltage application, the voltage of the voltage dividing point is clamped to the breakdown voltage of a Zener diode, the second PDMOS turns OFF, and supply to an integrated circuit protected from overvoltage is cut off. When the voltage source is connected in reverse, parasitic diodes of the first and second PMOSs are reverse-biased and the flow of current in a path through the parasitic diodes is inhibited.

A transmission gate includes a first P-type transistor and a second P-type transistor coupled in series between a first signal node and an internal node. The transmission gate is enabled by turning on the first P-type transistor and the second P-type transistor to communicate signals between the first signal node and the internal node. The transmission gate is disabled by turning off the first P-type transistor and the second P-type transistor to stop communicating signals between the first signal node and the internal node. While the transmission gate is disabled, a third P-type transistor having a first current electrode coupled to a circuit node between the first and second P-type transistors and a control electrode coupled to the first signal node is used to track voltage of the first signal node and, in response to the tracking, control a voltage level at the circuit node to limit a gate-to-source voltage of the first P-type transistor.

The present invention provides a common-mode transient suppression protection circuit for a digital isolator, including a modulation circuit, a demodulation circuit and an isolation capacitor connected between the modulation circuit and the demodulation circuit. The modulation circuit includes a modulation circuit front-end and a drive circuit, which are connected in sequence, and a clamping module is arranged in the drive circuit. The protection circuit further includes a linear voltage regulator structure connected with the drive circuit, and a power supply clamp is arranged in the linear voltage regulator structure. By providing the linear voltage regulator structure having the power supply clamp and the drive circuit having the clamping module in the protection circuit, low-voltage devices in the drive circuit can be protected from being damaged by high-voltage signals generated by common-mode transient interference.

Over-voltage protection systems and methods are disclosed. In one aspect, a biasing circuit is added to a pre-existing clamp required by the Universal Serial Bus (USB) Type-C specification at a configuration control (CC) pin. The biasing circuit turns the pre-existing clamp into an adjustable clamp that dynamically adjusts to over-voltage conditions. In an exemplary aspect, the biasing circuit may include a biasing field effect transistor (FET) and a pair of switches that selectively couple the pre-existing clamp and the biasing FET to fixed voltages such that the CC pin is maintained at an acceptable voltage. In another exemplary aspect, the biasing circuit may omit the biasing FET and rely on two switches that selectively couple the pre-existing clamp to fixed voltages such that the CC pin is maintained at an acceptable voltage.

A cross-domain power control circuit is disclosed. The circuit includes a first circuit branch having a first transistor coupled to a first supply voltage node and a second circuit branch having a second transistor coupled to the first supply voltage node. A third circuit branch is coupled between a second supply voltage node and a third supply voltage node. A second supply voltage conveyed on the second supply voltage node is less than a first supply voltage conveyed on the first supply voltage node. A fourth circuit branch is coupled between the first and third supply voltage nodes. In a first mode of operation, control circuitry causes the second supply voltage to be conveyed to the third supply voltage node. In a second mode of operation, the control circuitry causes the first supply voltage to be conveyed to the third supply voltage node.

The interface circuit includes a first transistor, a second transistor, a first switch, a first logic circuit and a second logic circuit. The first transistor is controlled by a enable signal. The second transistor is controlled by a first control signal. The first switch is coupled between a second end of the first transistor and the output end of the interface circuit, wherein the first switch is controlled by a second control signal. The first logic circuit generates the first control signal according to the enable signal and at least one indication signal. The second logic circuit generates the second control signal according to the first control signal and the enable signal.

Techniques are described to address P-MOS bias temperature instability (BTI) stress issues within capacitive radio frequency digital-to-analog converter (CDAC) using a circuit architecture solution that functions to protect the transistors in various operating conditions. Techniques are disclosed that function to float one or both of the negative and positive power supply rail voltages higher or lower, respectively, for CDAC cells depending upon various operating scenarios. These scenarios include the transmitting state of individual CDAC cells and the transmitting state of the CDAC array in which the CDAC cell is implemented.

Electronic device comprising at least: a plurality of MOSFET FD-SOI type transistors among which the first transistors are such that each first transistor comprises a channel in which a concentration of the same type of dopants as those present in the source and drain of said first transistor is greater than the concentration in the channel of each of the other transistors in said plurality of transistors; and an identification circuit capable of determining a unique identifier of the electronic device starting from at least one intrinsic electrical characteristic of each of the first transistors, the value of which depends at least partly on the conductance of said first transistor; and in which the length of a gate of each of the first transistors is less than or equal to about 20 nm.