A semiconductor apparatus may include logic circuits and a control logic. The control logic may be configured to monitor characteristics of the logic circuits to allow the semiconductor apparatus to perform at different operating speeds.

Embodiments provide for a tunable driving circuit by monitoring a frequency of a ring oscillator of an electrical integrated circuit connected to an optical modulator to determine operational characteristics of the electrical integrated circuit; setting, based on the operational characteristics, a driving voltage for a plurality of tunable inverters and a plurality of fixed gain inverters that control the optical modulator, wherein each tunable inverter of the plurality of tunable inverters is connected in parallel with a corresponding fixed gain inverter of the plurality of fixed gain inverters on one of a first arm and a second arm connected to the optical modulator; and setting an amplification strength for the plurality of tunable inverters based on the operational characteristics.

Systems, methods, and devices are provided for increasing uniformity of wear in semiconductor devices due to, for example, negative-bias temperature instability (NBTI). The method may include receiving a first NBTI control signal. The method may involve receiving a second NBTI control signal based at least in part on the first NBTI control signal. The method may also involve asserting the first NBTI control signal at a clock input pin of a latch. Further, the method may include asserting the second NBTI control signal at a data input pin of the latch. The method may additionally involve toggling electrical elements downstream of the latch based at least in part on an output of the latch based on the first and second NBTI control signals to increase uniformity of wear on the electrical elements in a default low-power state during NBTI toggling mode.

Aspects of the invention include a circuit including a power circuit having an amplifier, a resistor, a current source, and a first node, one end of the resistor being configured to couple to a power supply, the first node being coupled to an opposite end of the resistor, a first input terminal of the amplifier, and the current source. A voltage sensitive circuit includes a logic gate coupled to both a second input terminal of the amplifier and an output terminal of the amplifier at a second node.

An electronic device including a digital circuit to be compensated and a compensation device for compensating PVT variations of this digital circuit. This compensation device is arranged also for controlling the operating speed of the digital circuit and can also be arranged for equalising a rise time and a fall time of a logic gate including the transistors of the digital circuit. The electronic device implements a first loop, allowing to control the operating speed of the digital circuit by exploiting the same voltage at the compensation terminals of the compensation device and at the terminals at the digital circuit and at a critical path replica module allowing to control the threshold voltages of the respective transistors. The electronic device can implement also a second loop allowing to equalise the rise and fall times of a logic gate including the transistors of the digital circuit.

Methods and systems are described for generating a process-voltage-temperature (PVT)-dependent reference voltage at a reference branch circuit based on a reference current obtained via a band gap generator and a common mode voltage input, generating a PVT-dependent output voltage at an output of a static analog calibration circuit responsive to the common mode voltage input and an adjustable current, adjusting the adjustable current through the static analog calibration circuit according to a control signal generated responsive to comparisons of the PVT-dependent output voltage to the PVT-dependent reference voltage, and configuring a clocked data sampler with a PVT-calibrated current by providing the control signal to the clocked data sampler.

This disclosure relates to a power supply detection circuit, including: a first input stage field effect transistor; an inverter stage; and a feedback stage field effect transistor. The inverter stage includes a complimentary pair of transistors that includes an NMOS transistor and a PMOS transistor configured and arranged such that gate lengths of the PMOS and NMOS transistors are different. The disclosure also relates to an integrated circuit including a power supply detection circuit.

A glitch removal circuit removes glitch noise contained in a Power-good signal and a Power-on Reset signal, and includes: a first glitch removal unit that operates according to a first clock signal, and removes glitch noise from a Power-good signal; and a second glitch removal unit that operates according to a second clock signal, and removes glitch noise from a Power-on Reset signal, in which the first glitch removal unit is configured so as to be initialized according to an output signal of the second glitch removal unit, and the second glitch removal unit is configured so as to be initialized according to an output signal of the first glitch removal unit.

Clock generation and control in a semiconductor system having process, voltage and temperature (PVT) variation. A semiconductor device may include at least first and second ring oscillators, each disposed at locations respectively closest to first and second logic circuits of an operation circuit, and generating first and second oscillating signals. A detecting circuit is configured to perform a predetermined logic operation on the first oscillating signal and the second oscillating signal to generate a first clock signal. A calibration circuit is configured to receive the first clock signal from the detecting circuit and perform a delay control on each of the first ring oscillator and the second ring oscillator to generate a second clock signal for operating the operation circuit.

A gate driver includes a high-side region that operates in a first voltage domain, a low-side region that operations in a second voltage domain lower than the first voltage domain, a termination region interposed between the high-side region and the low-side region and configured to isolate the first voltage domain from the second voltage domain, a high-side gate driver disposed in the high-side region and configured to drive a high-side power transistor, a low-side gate driver disposed in the low-side region and configured to drive a low-side power transistor, and a plurality of termination diodes disposed in the termination region and configured to transmit information bits between the high-side region and the low-side region, where each of the plurality of termination diodes includes an anode coupled to the low-side region and a cathode coupled to the high-side region.