Aspects of the invention include a first pull-down device and a second pull-down device, wherein a first drain terminal is connected to a second source terminal, and wherein a first gate terminal is connected to a true read local bitline, wherein a second drain terminal is connected to a compliment read local bit line, and wherein a second gate terminal is connected to a true write global bitline, a third pull-down device and a fourth pull-down device, wherein a third source terminal is connected to the voltage supply, wherein a third drain terminal is connected to a fourth source terminal, and wherein a third gate terminal is connected to the compliment read local bitline, and wherein a fourth drain terminal is connected to the true read local bitline, and wherein a fourth gate terminal is connected to a compliment write global bit line.

A transmitter is disclosed with a pull-up feedback circuit and a feedback circuit. The transmitter includes an output driver for driving an output terminal.

A field effect transistor current mode differential logic circuit comprising load transistors for converting the current output of each differential leg current to voltage output, and means for configuring the bulk of each differential leg's load transistor to be connected to the drain of the load transistor for use the logic circuit in Subthreshold Source Coupled Logic (STSCL) mode, and means for configuring the bulk of each leg load transistor to be connected to a voltage or to source of the same transistor for use in MOS current more logic (MCML) operation.

A field effect transistor current mode differential logic circuit comprising load transistors for converting the current output of each differential leg current to voltage output, and means for configuring the bulk of each differential leg's load transistor to be connected to the drain of the load transistor for use the logic circuit in Subthreshold Source Coupled Logic (STSCL) mode, and means for configuring the bulk of each leg load transistor to be connected to a voltage or to source of the same transistor for use in MOS current more logic (MCML) operation.

A memory device includes a memory cell array having memory cells connected to wordlines and bitlines, and a clock buffer receiving a clock signal for performing a read operation or a write operation on at least one of the memory cells. The clock buffer includes a plurality of serially connected clock repeaters, and the plurality of clock repeaters have at least one pair of clock repeaters having different imbalanced driving capabilities.

A semiconductor structure is provided. The semiconductor structure includes a cell array having a plurality of rows. The cell array includes a plurality of first logic cells arranged in at least one first row, and a plurality of second logic cells arranged in at least one second row. The first logic cells share a first active region. Each of the second logic cells has a second active region, and the second active regions of two adjacent second logic cells are separated from each other by an isolation structure. The first logic cells of the first row are in contact with the second logic cells of the second row.

An analog switch includes an input terminal, an output terminal, a common gate, and a common source. The switch includes a current source which has a first input coupled to a first voltage supply, a control input coupled to receive a gate boost signal, and an output coupled to the common gate. The current source supplies a boost gate current to the common gate during a boost period and supplies a reduced gate current during a second period different than the boost period. The switch includes a clamp circuit which has a first terminal coupled to the common gate, a second terminal coupled to the common source, and a third terminal. The switch includes a Vgs detection circuit which provides the gate boost signal responsive to a conduction of current through the clamp circuit.

An analog switch includes an input terminal, an output terminal, a common gate, and a common source. The switch includes a current source which has a first input coupled to a first voltage supply, a control input coupled to receive a gate boost signal, and an output coupled to the common gate. The current source supplies a boost gate current to the common gate during a boost period and supplies a reduced gate current during a second period different than the boost period. The switch includes a clamp circuit which has a first terminal coupled to the common gate, a second terminal coupled to the common source, and a third terminal. The switch includes a Vgs detection circuit which provides the gate boost signal responsive to a conduction of current through the clamp circuit.

An integrated circuit includes a memory cell array coupled to a bitline and a first wordline and a negative-type metal-oxide-semiconductors (NMOS) pull-down structure coupled to the bitline and PMOS transistors. The positive-type metal-oxide-semiconductors (PMOS) transistors may be coupled to a second wordline, where a logic value carried on the second wordline is based on a logic value carried on the first wordline, and the PMOS transistors are structured to pre-charge respective drains of the NMOS pull-down structure to a high logic value based on a low logic value carried on the second wordline. The NMOS pull-down structure may be structured to discharge the bitline based on a high logic value carried on the second wordline.

An active termination circuit comprising an input node connected to a transmission line, a first transistor, and a second transistor. The transmission line supplies a signal to the input node. The first transistor is diode connected between a high voltage supply and the input node. The first transistor terminates the signal when the signal is at a low logic level. The second transistor is diode connected between the input node and a low voltage supply. The second transistor terminates the signal when the signal is at a high logic level.