Patent classifications
H03K19/018
METHOD FOR IMPLEMENTING VPTAT MULTIPLIER IN HIGH ACCURACY THERMAL SENSOR
A temperature sensing circuit a switched capacitor circuit selectively samples ΔVbe and Vbe voltages and provides the sampled voltages to inputs of an integrator. A quantization circuit quantizes outputs of the integrator to produce a bitstream. When a most recent bit of the bitstream is a logic zero, operation includes sampling and integration of ΔVbe a first given number of times to produce a voltage proportional to absolute temperature. When the most recent bit of the bitstream is a logic one, operation includes cause sampling and integration of Vbe a second given number of times to produce a voltage complementary to absolute temperature. A low pass filter and decimator filters and decimates the bitstream produced by the quantization circuit to produce a signal indicative of a temperature of a chip into which the temperature sensing circuit is placed.
APPARATUS FOR TRANSMITTING AND RECEIVING A SIGNAL, A METHOD OF OPERATING THE SAME, A MEMORY DEVICE, AND A METHOD OF OPERATING THE MEMORY DEVICE
A signal transmitting and receiving apparatus including: a first on-die termination circuit connected to a first pin through which a first signal is transmitted or received and, when enabled, the first on-die termination circuit is configured to provide a first termination resistance to a signal line connected to the first pin; a second on-die termination circuit connected to a second pin through which a second signal is transmitted or received and, when enabled, the second on-die termination circuit is configured to provide a second termination resistance to a signal line connected to the second pin; and an on-die termination control circuit configured to independently control an enable time and a disable time of each of the first on-die termination circuit and the second on-die termination circuit.
Apparatus for transmitting and receiving a signal, a method of operating the same, a memory device, and a method of operating the memory device
A signal transmitting and receiving apparatus including: a first on-die termination circuit connected to a first pin through which a first signal is transmitted or received and, when enabled, the first on-die termination circuit is configured to provide a first termination resistance to a signal line connected to the first pin; a second on-die termination circuit connected to a second pin through which a second signal is transmitted or received and, when enabled, the second on-die termination circuit is configured to provide a second termination resistance to a signal line connected to the second pin; and an on-die termination control circuit configured to independently control an enable time and a disable time of each of the first on-die termination circuit and the second on-die termination circuit.
Apparatus for transmitting and receiving a signal, a method of operating the same, a memory device, and a method of operating the memory device
A signal transmitting and receiving apparatus including: a first on-die termination circuit connected to a first pin through which a first signal is transmitted or received and, when enabled, the first on-die termination circuit is configured to provide a first termination resistance to a signal line connected to the first pin; a second on-die termination circuit connected to a second pin through which a second signal is transmitted or received and, when enabled, the second on-die termination circuit is configured to provide a second termination resistance to a signal line connected to the second pin; and an on-die termination control circuit configured to independently control an enable time and a disable time of each of the first on-die termination circuit and the second on-die termination circuit.
Single-polarity level shifter circuit and semiconductor device
A semiconductor device capable of level shifting in a negative potential direction using an n-channel transistor is provided. The semiconductor device includes a first source follower, a second source follower, and a comparator. The first source follower is supplied with a second high power supply potential and a low power supply potential; the second source follower is supplied with a first high power supply potential and the low power supply potential; and a digital signal which expresses a high level or a low level using the second high power supply potential or the first high power supply potential is input to the first source follower. Here, the second high power supply potential is a potential higher than the first high power supply potential, and the first high power supply potential is a potential higher than the low power supply potential. The comparator compares output potentials of the first source follower and the second source follower and outputs a digital signal which expresses a high level or a low level using the first high power supply potential or the low power supply potential.
Slew rate control circuit and method
A circuit includes a driver circuit configured to generate a driving signal having a first edge, an output circuit coupled to the driver circuit via a connection to receive the driving signal on the connection, and a compensation circuit coupled to the connection. The output circuit is configured to generate an output signal in response to the driving signal. A second edge of the output signal has a slew rate corresponding to a changing rate of a voltage of the driving signal on the first edge. The compensation circuit is configured to be enabled at a beginning of the first edge to pull the voltage of the driving signal on the first edge toward a threshold voltage. The compensation circuit is further configured to be disabled in response to and after the voltage of the driving signal on the first edge reaching the threshold voltage.
OPAMP OVERLOAD POWER LIMIT CIRCUIT, SYSTEM, AND A METHOD THEREOF
An amplifier overload power limit circuit, system, and a method thereof comprising a monitoring of a current gain of a BJT based on a current detector and limiting power to the BJT based on the monitored current gain to prevent the BJT from driven into a saturation mode and the amplifier overdrive.
Input/output circuit
For a single input/output circuit, changing an input/output form is enabled by a simple configuration. In the input/output circuit, a circuit section includes power supply terminals and ground terminals. A switching section is switchable between a first state in which a power supply line and a ground line are coupled to one of the power supply terminals and one of the ground terminals and a second state in which the power supply line and the ground line are coupled to the other one of the power supply terminals and the other one of the ground terminals. The circuit section operates as a circuit corresponding to one of an open collector output and an open emitter output in the first state and operates as a circuit corresponding to the other one of the open collector output and the open emitter output in the second state.
Input/output circuit
For a single input/output circuit, changing an input/output form is enabled by a simple configuration. In the input/output circuit, a circuit section includes power supply terminals and ground terminals. A switching section is switchable between a first state in which a power supply line and a ground line are coupled to one of the power supply terminals and one of the ground terminals and a second state in which the power supply line and the ground line are coupled to the other one of the power supply terminals and the other one of the ground terminals. The circuit section operates as a circuit corresponding to one of an open collector output and an open emitter output in the first state and operates as a circuit corresponding to the other one of the open collector output and the open emitter output in the second state.
Semiconductor module and semiconductor package
A semiconductor module includes: a control circuit for controlling first and second transistors operating complementarily; and an internal controller receiving a data signal including a set value of an operating characteristic from an external controller to store the data signal in a memory and then transferring the set value of the operating characteristic to the control circuit. The data signal is sent to the internal controller in the order of the set value of the operating characteristic and a specific trigger value. The internal controller transfers the set value of the operating characteristic to the control circuit in timed relation to writing of the specific trigger value into the memory. The control circuit includes first and second drivers. The control circuit changes settings of the first and second drivers to thereby change the operating characteristic of the semiconductor module.