A level shifter, a digital-to-analog converter (DAC), and a buffer amplifier, and a source driver and an electronic device including the same are provided. The source driver includes a level shifter configured to receive digital bits and provide a level-shifted output signal; a DAC including a resistor string configured to provide a plurality of gradation voltages formed by an upper limit voltage and a lower limit voltage being received through one end and the other end, and an N-type metal oxide semiconductor (NMOS) switch and a P-type MOS (PMOS) switch configured to be controlled by the level-shifted output signal and output a gradation voltage corresponding to the level-shifted output signal; and an amplifier configured to amplify a signal provided by the digital-to-analog converter, and the lower limit voltage is provided to a body electrode of the NMOS switch.

In one embodiment, a voltage level shifter includes a first p-type metal-oxide-semiconductor (PMOS) transistor having a gate configured to receive an input signal in a first power domain, and a second PMOS transistor, wherein the first and second PMOS transistors are coupled in series between a supply voltage of a second power domain and a node. The voltage level shifter also includes an inverter having an input coupled to the node and an output coupled to a gate of the second PMOS transistor, and a first n-type metal-oxide-semiconductor (NMOS) transistor having a gate configured to receive the input signal in the first power domain, wherein the first NMOS transistor is coupled between the node and a ground.

Provided is a digital circuit (30) that comprises: a switching circuit (31) having first transistors (32, 33) supplied with power supply potentials (VDD, VSS): correcting circuits (34, 36) connected between an input terminal (IN) inputted with an input signal and control terminals (gates) of the first transistors; capacitors (C2, C3) connected between the control terminals and the input terminal; diode-connected second transistors (35, 37) that are provided between nodes (N5, N6) between the capacitors and the control terminals and the power supply potentials and have the substantially same threshold voltage as the first transistors; and switches (SW2, SW3) connected in series with the second transistors.

The off-chip driving (OCD) device includes a signal transition detector, a front-end driver, a first main driver, a second main driver, a first resistance provider and a second resistance provider. The signal transition detector is used to detect a transition status of an input signal to generate decision information. The front-end driver generates control signals according to the decision information, and generates driving signals according to the input signal. The first main driver and the second main driver generate an output signal to a pad according to the driving signals. The first resistance provider adjusts a first resistance between the first main driver and the pad according to a first control signal. The second resistance provider adjusts a second resistance between the second main driver and the pad according to a second control signal.

A level shifter, a digital-to-analog converter (DAC), and a buffer amplifier, and a source driver and an electronic device including the same are provided. The source driver includes a level shifter configured to receive digital bits and provide a level-shifted output signal; a DAC including a resistor string configured to provide a plurality of gradation voltages formed by an upper limit voltage and a lower limit voltage being received through one end and the other end, and an N-type metal oxide semiconductor (NMOS) switch and a P-type MOS (PMOS) switch configured to be controlled by the level-shifted output signal and output a gradation voltage corresponding to the level-shifted output signal; and an amplifier configured to amplify a signal provided by the digital-to-analog converter, and the lower limit voltage is provided to a body electrode of the NMOS switch.

In an embodiment, an integrated circuit includes a clock tree circuit and logic circuitry that is clocked by the clocks received from the clock tree circuit. The logic circuit is powered by a first power supply voltage. The integrated circuit includes a voltage regulator that receives the first power supply voltage and generates a second power supply voltage having a magnitude that is lower than the magnitude of the first power supply voltage by a predetermined amount. The second power supply voltage may track the first power supply voltage over dynamic changes during use, either intentional changes to operating state or noise-induced changes. The second power supply voltage may be used to power at least a portion of the clock tree.

Techniques and apparatus for reducing low frequency power supply spurs in clock signals in a clock distribution network. One example circuit for clock distribution generally includes a plurality of logic inverters coupled in series and configured to drive a clock signal and a current-starved inverter coupled in parallel (or in series) with a logic inverter in the plurality of logic inverters.

A semiconductor device includes a hysteresis block configured to generate an output voltage at corresponding disabling enabling voltage levels and a core-voltage-gated (CVG) device configured to receive a core voltage, an input terminal of the hysteresis block is coupled to a control node. The CVG device is configured to alter a control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the disabling voltage level in response to the core voltage being at or below a first trigger level. Additionally, the CVG device is configured to alter the control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the enabling voltage level in response to the core voltage being at or above a second trigger level, the second trigger level being above the first trigger level.

A MOS IC logic cell includes a plurality of gate interconnects extending on tracks in a first direction. The logic cell includes intra-cell routing interconnects coupled to at least a subset of the gate interconnects. The intra-cell routing interconnects include intra-cell Mx layer interconnects on an Mx layer extending in the first direction. The Mx layer is a lowest metal layer for PG extending in the first direction. The intra-cell Mx layer interconnects extend in the first direction over at least a subset of the tracks excluding every m.sup.th track, where 2≤m<P.sub.PG and P.sub.PG is a PG grid pitch. A MOS IC may include at least one MOS IC logic cell, and may further include a first set of PG Mx layer interconnects extending in the first direction over the at least one logic cell. The first set of PG Mx layer interconnects have the pitch P.sub.PG>m*P.

A level shifter includes a buffer circuit, a first shift circuit, and a second shift circuit. The buffer circuit provides a first signal and a first inverted signal to the first shift circuit, such that the first shift circuit provides a second signal and a second inverted signal to the second shift circuit. The second shift circuit generates a plurality of output signals according to the second signal and the second inverted signal. The first shift circuit includes a plurality of first stacking transistors and a first voltage divider circuit. The first voltage divider circuit is electrically coupled between a first system high voltage terminal and a system low voltage terminal. The first voltage divider circuit is configured to provide a first inner bias to gate terminals of the first stacking transistors.