The embodiments herein describe technologies for back-gate biasing of clock trees using a reference generator. A circuit includes a set of clock buffers and a programmable voltage reference generator to apply a voltage to a back gate of a transistor of the set of clock buffers.

A transmitter is provided. the transmitter includes a hybrid feedback circuit and a hybrid driving circuit. The hybrid feedback circuit compares a reference voltage with a feedback voltage in closed-loop, determines whether to perform polarity reversal according to a mode control signal, controls power output according to a comparison result and the mode control signal, and generates a first output signal. The hybrid driving circuit, coupled to the hybrid feedback circuit, receives the first output signal of the hybrid feedback circuit, generates a transmitter output signal according to an input data, and generates a second output signal according to the transmitter output signal. The first output signal and the second output signal are transmitted back to the hybrid feedback circuit.

Embodiments of the present disclosure provide a level shifter, including: first and second NMOS transistors, wherein the sources of the first and second NMOS transistors are coupled to a first voltage, the gate of the first NMOS transistor is connected to an inverse of an input signal that varies between a second voltage and a third voltage, and wherein the gate of the second NMOS transistor receives a buffer of the input signal. a breakdown protection circuit has third and fourth NMOS transistors, the gates of the third and fourth NMOS transistors being connected to the third voltage, the drain of the first NMOS transistor being connected to the source of the third NMOS transistor, and the drain of the second NMOS transistor being connected to the source of the fourth NMOS transistor. A pull-up circuit is connected to the drains of the third and fourth NMOS transistors.

Embodiments of the present disclosure provide a level shifter, including: first and second NMOS transistors, wherein the sources of the first and second NMOS transistors are coupled to a first voltage, the gate of the first NMOS transistor is connected to an inverse of an input signal that varies between a second voltage and a third voltage, and wherein the gate of the second NMOS transistor receives a buffer of the input signal. a breakdown protection circuit has third and fourth NMOS transistors, the gates of the third and fourth NMOS transistors being connected to the third voltage, the drain of the first NMOS transistor being connected to the source of the third NMOS transistor, and the drain of the second NMOS transistor being connected to the source of the fourth NMOS transistor. A pull-up circuit is connected to the drains of the third and fourth NMOS transistors.

A receiver includes the following: a signal receiving circuit, including a first MOS transistor and a second MOS transistor, where a gate of the first MOS transistor is configured to receive a reference signal and a gate of the second MOS transistor is configured to receive a data signal, and the signal receiving circuit is configured to output a comparison signal, the comparison signal being configured to represent a magnitude relationship between a voltage value of the reference signal and a voltage value of the data signal; and an adjusting circuit, including a third MOS transistor, where a source of the third MOS transistor is connected to a source of the first MOS transistor, a drain of the third MOS transistor is connected to a drain of the first MOS transistor, and a gate of the third MOS transistor is configured to receive an adjusting signal.

A driver circuit drives an output terminal with an input/output voltage using an NMOS transistor and a PMOS transistor. A pre-driver for the NMOS transistor supplied with a drive voltage and receives a data signal referenced to the drive voltage. A pre-driver for the PMOS transistor has a positive supply input connected to the positive supply rail, a negative supply input receiving a second drive voltage equal to the supply voltage minus the drive voltage. A level shifter circuit, shifts the data signal to be referenced between the supply voltage and the second drive voltage. A charge pump circuit for providing second drive voltage, the charge pump circuit driven with a variable switching frequency proportional to a current of the PMOS transistor.

A circuit includes a control inverter, a first latch circuit, and a second latch circuit. The control inverter receives a control signal to generate a reverse control signal. The first latch circuit is activated by the reverse control signal to convert a first input signal ranging from the first supply voltage to the ground into a first output signal ranging from the second supply voltage to the ground. The second latch circuit is activated by the reverse control signal to convert a second input signal ranging from a first supply voltage to the ground into a second output signal ranging from the second supply voltage to the ground. The first supply voltage and the second supply voltage are different.

The present invention discloses a series circuit and a computing device, including: a power supply terminal for providing voltage for a plurality of chips disposed on the computing device; a ground terminal disposed at one end of each of the plurality of chips relative to the power supply terminal; and a first connection line for separately connecting a first predetermined number of chips of the plurality of chips in series, wherein a communication line is connected between adjacent chips of the first predetermined number of chips, a portion of the communication line is connected to a target connection point, which is disposed on the first connection line and adapted to the adjacent chips, via a third connection line, and the voltage at the target connection point is greater than or equal to the minimum voltage required for communication between the adjacent chips. Such circuit structure can be used to provide the voltage required for communication between adjacent chips, while ensuring the same voltage between chips. Therefore, there is no need to provide an auxiliary power supply for each chip or to use a number of signal level conversion devices, thereby reducing the costs.

An electronic device may include one or more output buffers each including a pair of final p-channel metal oxide semiconductor (PMOS) and n-channel metal oxide semiconductor (NMOS) transistors, a first pre-buffer to drive the PMOS transistor, and a second pre-buffer to drive the NMOS transistor. Each output buffer receives power from a pre-buffer supply filtering circuit, which may include a supply capacitor for stabilizing supply voltage, a low-pass first pre-buffer supply filter to filter the voltage supplied to the first pre-buffer, and a low-pass second pre-buffer supply filter the voltage supplied to the second pre-buffer.

A semiconductor device includes an input, a level shifter, an output, and a switch module. The input is configured to receive an input signal in a first voltage domain. The level shifter is connected to the input and is configured to shift the input signal from the first voltage domain to a second voltage domain. The switch module is configured to connect one of the input and the level shifter to the output. A method of mitigating a delay between input and output signals of the semiconductor device is also disclosed.