H03K19/185

Ferroelectric memory devices

A pocket integration for high density memory and logic applications and methods of fabrication are described. While various embodiments are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For example, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

Ferroelectric memory devices

A pocket integration for high density memory and logic applications and methods of fabrication are described. While various embodiments are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For example, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

LOGIC INTEGRATED CIRCUIT

This logic integrated circuit has a plurality of first switch cells including variable resistance elements and a plurality of second switch cells including variable resistance elements. The logic integrated circuit comprises: a first output port and a second output port; the plurality of first switch cells for switching the electrical connections between a first wire and a third wire; the plurality of second switch cells for switching the electrical connections between a second wire and the third wire; a first control transistor which is connected to the first wire and which is for switching the electrical connections between the first wire and a first power line supplying power to the first wire; and a second control transistor which is connected to the second wire and which is for switching the electrical connections between the second wire and the first power line supplying power to the second wire.

LOGIC INTEGRATED CIRCUIT

This logic integrated circuit has a plurality of first switch cells including variable resistance elements and a plurality of second switch cells including variable resistance elements. The logic integrated circuit comprises: a first output port and a second output port; the plurality of first switch cells for switching the electrical connections between a first wire and a third wire; the plurality of second switch cells for switching the electrical connections between a second wire and the third wire; a first control transistor which is connected to the first wire and which is for switching the electrical connections between the first wire and a first power line supplying power to the first wire; and a second control transistor which is connected to the second wire and which is for switching the electrical connections between the second wire and the first power line supplying power to the second wire.

PERPENDICULAR MAGNETOELECTRIC SPIN ORBIT LOGIC

An apparatus is provided which comprises: a first magnet with perpendicular magnetic anisotropy (PMA); a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse Rashba-Bychkov effect; a second magnet with PMA; a magnetoelectric layer adjacent to the second magnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.

PERPENDICULAR MAGNETOELECTRIC SPIN ORBIT LOGIC

An apparatus is provided which comprises: a first magnet with perpendicular magnetic anisotropy (PMA); a stack of layers, a portion of which is adjacent to the first magnet, wherein the stack of layers is to provide an inverse Rashba-Bychkov effect; a second magnet with PMA; a magnetoelectric layer adjacent to the second magnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.

Switch circuit, semiconductor device using same, and switching method
10693467 · 2020-06-23 · ·

A switch circuit includes: a plurality of four-terminal switches having variable-resistance elements and a rectifier element serially connected; an input line and an output line, at least one of which is multiply present, to which are connected terminals of two switches other than terminals at which the variable-resistance terminals are serially connected; and a control line to which are connected the terminals of the two switches other than the terminals at which the rectifier elements are serially connected, the control line, together with the input line and the output line, turning on and off in turn, by pair, the pair of variable-resistance elements connected to the input line and the pair of variable-resistance elements connected to the output line, among the variable-resistance elements of the plurality of four-terminal switches of the four-terminal switches connected to the input line or the output line.

Switch circuit, semiconductor device using same, and switching method
10693467 · 2020-06-23 · ·

A switch circuit includes: a plurality of four-terminal switches having variable-resistance elements and a rectifier element serially connected; an input line and an output line, at least one of which is multiply present, to which are connected terminals of two switches other than terminals at which the variable-resistance terminals are serially connected; and a control line to which are connected the terminals of the two switches other than the terminals at which the rectifier elements are serially connected, the control line, together with the input line and the output line, turning on and off in turn, by pair, the pair of variable-resistance elements connected to the input line and the pair of variable-resistance elements connected to the output line, among the variable-resistance elements of the plurality of four-terminal switches of the four-terminal switches connected to the input line or the output line.

SWITCH CIRCUIT, SEMICONDUCTOR DEVICE USING SAME, AND SWITCHING METHOD
20200106443 · 2020-04-02 · ·

A switch circuit includes: a plurality of four-terminal switches having variable-resistance elements and a rectifier element serially connected; an input line and an output line, at least one of which is multiply present, to which are connected terminals of two switches other than terminals at which the variable-resistance terminals are serially connected; and a control line to which are connected the terminals of the two switches other than the terminals at which the rectifier elements are serially connected, the control line, together with the input line and the output line, turning on and off in turn, by pair, the pair of variable-resistance elements connected to the input line and the pair of variable-resistance elements connected to the output line, among the variable-resistance elements of the plurality of four-terminal switches of the four-terminal switches connected to the input line or the output line.

SWITCH CIRCUIT, SEMICONDUCTOR DEVICE USING SAME, AND SWITCHING METHOD
20200106443 · 2020-04-02 · ·

A switch circuit includes: a plurality of four-terminal switches having variable-resistance elements and a rectifier element serially connected; an input line and an output line, at least one of which is multiply present, to which are connected terminals of two switches other than terminals at which the variable-resistance terminals are serially connected; and a control line to which are connected the terminals of the two switches other than the terminals at which the rectifier elements are serially connected, the control line, together with the input line and the output line, turning on and off in turn, by pair, the pair of variable-resistance elements connected to the input line and the pair of variable-resistance elements connected to the output line, among the variable-resistance elements of the plurality of four-terminal switches of the four-terminal switches connected to the input line or the output line.