A communication device that applies an error in an upper layer in addition to error correction in a physical layer is provided. The communication device includes an acquisition unit that acquires control information regarding forward error correction (FEC) of an upper layer and control information regarding FEC of a lower layer, an encoding-decoding unit that performs error correction encoding or decoding of an information sequence in the upper layer according to control information regarding the FEC of the upper layer, and a puncturing processing unit that performs puncturing or depuncturing in the upper layer. The information sequence after FEC encoding of the upper layer is divided into blocks, and puncturing and interleaving are performed in units of blocks.

A transmitter is provided. The transmitter includes: a Low Density Parity Check (LDPC) encoder configured to encode input bits to generate parity bits; a parity permutator configured to group-wise interleave a plurality of bit groups including the parity bits; and a puncturer configured to select some of the parity bits in the group-wise interleaved bit groups and puncture the selected parity bits, wherein the parity permutator group-wise interleaves the bit groups such that some of the bit groups at predetermined positions in the bit groups before the group-wise interleaving are positioned serially after the group-wise interleaving and a remainder of the bit groups before the group-wise interleaving are positioned without an order after the group-wise interleaving so that the puncturer selects parity bits included in the some of the bit groups sequentially and selects parity bits included in the remainder of the bit groups without an order.

One example of layer-by-layer error correction can include iteratively error correcting the codeword on a layer-by-layer basis with the first error correction circuit in a first mode and determining on the layer-by-layer basis whether a number of parity errors in a particular layer is less than a threshold number of parity errors. The codeword can be transferred to a second error correction circuit when the number of parity errors is less than the threshold number of parity errors. The codeword can be iteratively error corrected with the first error correction circuit in a second mode when the number of parity errors is at least the threshold number of parity errors. The threshold number of parity errors can be at least partially based on an adjustable code rate of the first error correction circuit or the second error correction circuit.

A system, and corresponding method, is described for updating or calculating ECC where the transaction volume is significantly reduced from a read-modify-write to a write, which is more efficient and reduces demand on the data access bandwidth. The invention can be implemented in any chip, system, method, or HDL code that perform protection schemes and require ECC calculation, of any kind. Embodiments of the invention enable IPs that use different protections schemes to reduce power consumption and reduce bandwidth access to more efficiently communicate or exchange information.

A method for performing error correction for a plurality of storage drives and a storage appliance comprising a plurality of storage devices is disclosed. In one embodiment, the method includes generating a first set of parity bits from a first set of data of at least one of the plurality of storage devices, the first set of parity bits capable of correcting a first number of error bits of the first set of data. The method further includes generating a second set of parity bits from a concatenated set of the first data and a second set of data from at least another of the plurality of storage devices, the second set of parity bits capable of correcting a second number of error bits of the first set of data, the second number being greater than the first number. The method further includes reading the first set of data and (i) correcting error bits within the first set of data with the first set of parity bits where a number of error bits is less than the first number of error bits; and (ii) correcting error bits within the first set of data with the second set of parity bits where the number of error bits is greater than the first number.

The present disclosure discloses a method and a device in a User and a base station used for channel coding. A first node determines a first bit block; performs channel coding; and transmits a first radio signal. Bits in the first bit block are used to generate bits in a second bit block. The bits in the first bit block and in the second bit block are used for an input to the channel coding, an output after the channel coding is used to generate the first radio signal. Channel coding is based on a polar code. A sub-channel occupied by a target first type bit is related to the number of bits in the second bit block related to the target first type bit. The target first type bit belongs to the first bit block. The disclosure can improve decoding performance of polar codes and reduce complexity of decoding.

A method and an apparatus for transmitting broadcast signals thereof are disclosed. The apparatus for transmitting broadcast signals comprises an encoder for encoding service data, a mapper for mapping the encoded service data into a plurality of OFDM (Orthogonal Frequency Division Multiplex) symbols to build at least one signal frame, a frequency interleaver for frequency interleaving data in the at least one signal frame by using a different interleaving-seed which is used for every OFDM symbol pair comprised of two sequential OFDM symbols, a modulator for modulating the frequency interleaved data by an OFDM scheme and a transmitter for transmitting the broadcast signals having the modulated data, wherein the different interleaving-seed is generated based on a cyclic shifting value and wherein an interleaving seed is variable based on an FFT size of the modulating.

Methods, systems, and devices for memory error correction based on layered error detection are described. In some examples, a memory system identifies, based on a first type of error detection procedure, that a set of bits includes a quantity of erroneous bits that is uncorrectable based on the first type of error detection procedure alone. The memory system generates one or more candidate sets of bits based on altering different groups of bits within the set of bits and evaluate one or more such candidate sets of bits using a second type of error detection procedure until a candidate set of bits is identified as error-free. The memory system then corrects the set of bits based on the candidate set of bits identified as error-free.

Devices and techniques for extended error correction in a storage device are described herein. A first set of data, that has a corresponding logical address and physical address, is received. A second set of data can be selected based on the logical address. Secondary error correction data can be computed from the first set of data and the second set of data. Primary error correction data can be differentiated from the secondary error correction data by being computed from the first set of data and a third set of data. The third set of data can be selected based on the physical address of the first set of data. The secondary error correction data can be written to the storage device based on the logical address.

Devices, systems and methods for improving reliability and security of a memory system are described. An example method includes receiving a seed value and a data stream, generating, based on the seed and using a physical unclonable function (PUF) generator, a PUF data pattern, generating, based on the seed, a pseudo-random data pattern, performing a first logic operation on the PUF data pattern and the data stream to generate a result of the first logic operation as a first data sequence, and performing a second logic operation on the pseudo-random data pattern and a second data sequence that is based on the first data sequence to generate a result of the second logic operation as a third data sequence for storage on the memory system, wherein the PUF generator is selected at least in-part based on one or more physical characteristics of the memory system.