A structure for radiofrequency applications includes: a semiconducting supporting substrate, and a trapping layer arranged on the supporting substrate. The trapping layer includes a higher defect density than a predetermined defect density. The predetermined defect density is the defect density beyond which the electric resistivity of the trapping layer is no lower 10,000 ohm.Math.cm over a temperature range extending from −20° C. to 120° C.

Generally described, aspects of the disclosed subject matter are directed to a shroud assembly for a communication site. In accordance with one embodiment of the present disclosure, a shroud assembly for a communication site is provided. The shroud assembly generally includes a wall portion, and a door portion movably coupled to the wall portion, wherein the door portion is configured for selective positioning in at least first and second positions relative to the wall portion, and wherein the wall portion and the door portion define a cover assembly having an inner chamber.

Generally described, aspects of the disclosed subject matter are directed to a shroud assembly for a communication site. In accordance with one embodiment of the present disclosure, a shroud assembly for a communication site is provided. The shroud assembly generally includes a wall portion, and a door portion movably coupled to the wall portion, wherein the door portion is configured for selective positioning in at least first and second positions relative to the wall portion, and wherein the wall portion and the door portion define a cover assembly having an inner chamber.

Novel tools and techniques are provided for implementing MediaLink Interconnection Boxes (“MIBs”). In some embodiments, a plurality of MediaLink Interconnection Boxes (“MIBs”) or media interconnection devices, which may be disposed throughout a recreational vehicle (“RV”) park or other bulk service provider application sites, or the like, may serve as demarcation units designed to each provide an accessible indoor or outdoor interface where long-term or temporary/transient customers can directly connect to land line service (e.g., POTS service), video or television service, and/or Ethernet or Internet services provided by one or more service providers. Fiber-to-Drop-Point (“FTDP”) and/or point-to-point fiber insertion within a passive optical network (“PON”) communications system may be implemented using apical conduit systems in conjunction with the MIBs. Alternatively, traditional ground-based or buried line interconnections (or a combination of the apical conduit system and such traditional interconnections) may be implemented in conjunction with the MIBs.

A data processing system includes a display device, a proximity sensor, a wireless data processing apparatus, and an external antenna. The display device and the wireless data processing apparatus are connected. The display device is equipped with an internal antenna indirectly connected to a wireless communication module of the wireless data processing apparatus. The external antenna is electrically connected to the wireless communication module. A data processing circuit of the wireless data processing apparatus normally controls the wireless communication module to set signal transmission strengths of the antennas by using a first antenna control mode. When the proximity sensor detects an object located close to proximity sensor, the data processing circuit controls the wireless communication module to set the signal transmission strengths by using a second antenna control mode that includes at least decreasing the signal transmission strength of the internal antenna.

A radio frequency module includes: a module board; a first semiconductor device containing a first power amplifier and a second power amplifier, the first power amplifier being configured to amplify a radio frequency signal of a first communication band, the second power amplifier being configured to amplify a radio frequency signal of a second communication band, the second communication band being different from the first communication band; and a second semiconductor device containing a control circuit configured to control the first power amplifier and the second power amplifier. In the radio frequency module, the first semiconductor device and the second semiconductor device are stacked together and disposed on the module board.

A radio frequency module includes: a module board; a first semiconductor device containing a first power amplifier and a second power amplifier, the first power amplifier being configured to amplify a radio frequency signal of a first communication band, the second power amplifier being configured to amplify a radio frequency signal of a second communication band, the second communication band being different from the first communication band; and a second semiconductor device containing a control circuit configured to control the first power amplifier and the second power amplifier. In the radio frequency module, the first semiconductor device and the second semiconductor device are stacked together and disposed on the module board.

The present disclosure relates to extremely high frequency (“EHF”) systems and methods for the use thereof, and more particularly to board-to-board connections using contactless connectors.

The present disclosure relates to extremely high frequency (“EHF”) systems and methods for the use thereof, and more particularly to board-to-board connections using contactless connectors.

A radio-frequency switching apparatus that can be used to turn a signal path on or off or to attenuate a radio-frequency signal. The switching apparatus comprises at least one radio-frequency input, at least one radio-frequency output, at least one transmission line providing a signal path between the at least one radio-frequency input and the at least one radio-frequency output, and at least one transition metal oxide portion. The radio-frequency switching apparatus also comprises direct current blocking means electrically coupled between the at least one transition metal portion and the at least one radio-frequency input. The radio-frequency switching apparatus also comprises biasing means for providing a bias across the at least one transition metal oxide portion such that power transferred between the radio-frequency input and the radio-frequency output is controlled by controlling the bias level across the at least one transition metal oxide portion.