Provided is a device which includes a method for the coherent detection of an optical signal, including the following steps of providing a vertically illuminable photodiode; producing an optical reference signal; radiating the optical signal and the reference signal into the photodiode in such a way that the two signals at least partially interfere with each other. Radiating the optical signal into the photodiode is effected via a first side of the photodiode, and radiating the reference signal into the photodiode is effected via a second side of the photodiode, or, vice versa, the reference signal is radiated into the photodiode via the first side of the photodiode and the optical signal is radiated into the photodiode via the second side.

This application provides a signal transmission method and apparatus. The method includes: obtaining, by a transmitter side, a first signal with N points; performing signal separation on the first signal with N points, to obtain two groups of signals (for example, a second signal with N points and a third signal with N points); combining the two groups of signals obtained through separation, to obtain a to-be-sent signal with 3N/2 points; and sending the signal with 3N/2 points to a receiver side, to enable the receiver to restore the first signal with N points from the received signal with 3N/2 points.

A method for the redundant transmission of data by means of light-based communication may include a data stream to be transmitted that is converted into symbols. This data stream is converted from bipolar symbols into multiple partial data streams having e.g. unipolar-positive symbols. The partial data streams are converted into multiple semi-redundant signals that are then transmitted to the receiver via multiple light-based channels. In the receiver, the received signals are converted back again analogously to when they were sent, in order to obtain the original data stream again.

A method for the redundant transmission of data by means of light-based communication may include a data stream to be transmitted that is converted into symbols. This data stream is converted from bipolar symbols into multiple partial data streams having e.g. unipolar-positive symbols. The partial data streams are converted into multiple semi-redundant signals that are then transmitted to the receiver via multiple light-based channels. In the receiver, the received signals are converted back again analogously to when they were sent, in order to obtain the original data stream again.

Disclosed are a transmitting method, a receiving method, a transmitting device and a receiving device for interface data. The transmitting method includes: interface data is obtained by the transmitting device via a first USB interface. The interface data is processed to obtain UDP packet by the transmitting device. The UDP packet is transmitted, by the transmitting device, to a first communication module. The UDP packet is transmitted to the receiving device or switch. By adopting the disclosure, ultra-low latency transmission of USB interface data between devices in long-distance transmission can be achieved.

Disclosed are a transmitting method, a receiving method, a transmitting device and a receiving device for interface data. The transmitting method includes: interface data is obtained by the transmitting device via a first USB interface. The interface data is processed to obtain UDP packet by the transmitting device. The UDP packet is transmitted, by the transmitting device, to a first communication module. The UDP packet is transmitted to the receiving device or switch. By adopting the disclosure, ultra-low latency transmission of USB interface data between devices in long-distance transmission can be achieved.

Embodiments are directed to systems and methods for utilizing aircraft cockpit and cabin lighting to provide both power and data transmission to occupants. Data and power may be transmitted on non-visible and/or visible spectrums. The visible light may be used independently for aircraft illumination. Data for the cockpit allows for quick upload and download of flight planning and maintenance data to an electronic flight bag. The electronic flight bag may also be able to receive power from cockpit and cabin lighting during flight.

Embodiments are directed to systems and methods for utilizing aircraft cockpit and cabin lighting to provide both power and data transmission to occupants. Data and power may be transmitted on non-visible and/or visible spectrums. The visible light may be used independently for aircraft illumination. Data for the cockpit allows for quick upload and download of flight planning and maintenance data to an electronic flight bag. The electronic flight bag may also be able to receive power from cockpit and cabin lighting during flight.

A device may include: a highly doped n.sup.+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n.sup.+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p.sup.− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p.sup.− Si charge region having a thickness of about 40-60 nm; and a p.sup.+ Ge absorption region disposed on at least a portion of the p.sup.− Si charge region; wherein the p.sup.+ Ge absorption region is doped across its entire thickness. The thickness of the n.sup.+ Si region may be about 100 nm and the thickness of the p.sup.− Si charge region may be about 50 nm. The p.sup.+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/°C.

A device may include: a highly doped n.sup.+ Si region; an intrinsic silicon multiplication region disposed on at least a portion of the n.sup.+ Si region, the intrinsic silicon multiplication having a thickness of about 90-110 nm; a highly doped p.sup.− Si charge region disposed on at least part of the intrinsic silicon multiplication region, the p.sup.− Si charge region having a thickness of about 40-60 nm; and a p.sup.+ Ge absorption region disposed on at least a portion of the p.sup.− Si charge region; wherein the p.sup.+ Ge absorption region is doped across its entire thickness. The thickness of the n.sup.+ Si region may be about 100 nm and the thickness of the p.sup.− Si charge region may be about 50 nm. The p.sup.+ Ge absorption region may confine the electric field to the multiplication region and the charge region to achieve a temperature stability of 4.2 mV/°C.